Patents by Inventor Chih-Wei Hsiung

Chih-Wei Hsiung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190165016
    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
    Type: Application
    Filed: November 30, 2017
    Publication date: May 30, 2019
    Inventors: Kazufumi Watanabe, Young Woo Jung, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
  • Patent number: 10304882
    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: May 28, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Young Woo Jung, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
  • Patent number: 10204951
    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: February 12, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Dyson Hsin-Chih Tai, Lindsay Alexander Grant
  • Patent number: 10181490
    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: January 15, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
  • Patent number: 10121809
    Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: November 6, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chin-Poh Pang, Boyang Zhang, Chia-Ying Liu, Wu-Zang Yang, Chih-Wei Hsiung, Chun-Yung Ai
  • Publication number: 20180286897
    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
    Type: Application
    Filed: January 29, 2018
    Publication date: October 4, 2018
    Applicant: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Dyson Hsin-Chih Tai, Lindsay Alexander Grant
  • Publication number: 20180286895
    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
    Type: Application
    Filed: April 3, 2017
    Publication date: October 4, 2018
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
  • Patent number: 10073239
    Abstract: A phase detection autofocus image sensor includes a first photodiode in a plurality of photodiodes disposed in a semiconductor material and a second photodiode in the plurality of photodiodes. A first pinning well is disposed between the first photodiode and the second photodiode, and the first pinning well includes a first trench isolation structure that extends from a first surface of the semiconductor material into the semiconductor material a first depth. A second trench isolation structure is disposed in the semiconductor material and surrounds the first photodiode and the second photodiode. The second trench isolation structure extends from the first surface of the semiconductor material into the semiconductor material a second depth, and the second depth is greater than the first depth.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: September 11, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Young Woo Jung, Chih-Wei Hsiung, Kazufumi Watanabe
  • Publication number: 20180151609
    Abstract: An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.
    Type: Application
    Filed: November 28, 2016
    Publication date: May 31, 2018
    Inventors: Dyson H. Tai, Duli Mao, Vincent Venezia, Gang Chen, Chih-Wei Hsiung
  • Patent number: 9986192
    Abstract: An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: May 29, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dyson H. Tai, Duli Mao, Vincent Venezia, Gang Chen, Chih-Wei Hsiung
  • Patent number: 9923009
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material between a first side and a second side of the semiconductor material. The image sensor also includes a plurality of hybrid deep trench isolation (DTI) structures disposed in the semiconductor material, where individual photodiodes in the plurality of photodiodes are separated by individual hybrid DTI structures. The individual hybrid DTI structures include a shallow portion that extends from the first side towards the second side of the semiconductor material, and the shallow portion includes a dielectric region and a metal region such that at least part of the dielectric region is disposed between the semiconductor material and the metal region. The hybrid DTI structures also include a deep portion that extends from the shallow portion and is disposed between the shallow portion and the second side of the semiconductor material.
    Type: Grant
    Filed: November 3, 2016
    Date of Patent: March 20, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chih-Wei Hsiung, Duli Mao, Vincent Venezia, Gang Chen, Dyson H. Tai
  • Publication number: 20180076247
    Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 15, 2018
    Inventors: Chin-Poh Pang, Boyang Zhang, Chia-Ying Liu, Wu-Zang Yang, Chih-Wei Hsiung, Chun-Yung Ai
  • Patent number: 9735196
    Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: August 15, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
  • Patent number: 9691810
    Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer disposed between the semiconductor material and the microlens layer. The spacer layer has a concave cross-sectional profile across the array, and the microlens layer is conformal with the concave cross-sectional profile of the spacer layer.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: June 27, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson Tai, Arvind Kumar, Hung Chih Chang, Chih-Wei Hsiung
  • Publication number: 20170179189
    Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer disposed between the semiconductor material and the microlens layer. The spacer layer has a concave cross-sectional profile across the array, and the microlens layer is conformal with the concave cross-sectional profile of the spacer layer.
    Type: Application
    Filed: December 18, 2015
    Publication date: June 22, 2017
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson Tai, Arvind Kumar, Hung Chih Chang, Chih-Wei Hsiung
  • Patent number: 9565405
    Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: February 7, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Dominic Massetti, Chih-Wei Hsiung, Arvind Kumar, Yuanwei Zheng, Duli Mao, Dyson H. Tai
  • Publication number: 20170025468
    Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.
    Type: Application
    Filed: October 5, 2016
    Publication date: January 26, 2017
    Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
  • Patent number: 9520431
    Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: December 13, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wei Zheng, Chia-Ying Liu, Chun-Yung Ai, Wu-Zang Yang, Chih-Wei Hsiung, Chen-Wei Lu
  • Patent number: 9490282
    Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.
    Type: Grant
    Filed: March 19, 2015
    Date of Patent: November 8, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
  • Patent number: 9455291
    Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: September 27, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Duli Mao, Yuanwei Zheng, Chih-Wei Hsiung, Arvind Kumar, Dyson H. Tai