Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

Abstract: A semiconductor structure includes an integrated circuit, a first dielectric layer over the integrated circuit, an etch stop layer over the first dielectric layer, a barrier layer over the etch stop layer, a conductive layer over the barrier layer, and a void region vertically extending through the conductive layer, the barrier layer, and the etch stop layer. The void region has an upper portion, a middle portion below the upper portion, and a lower portion below the middle portion, the middle portion. The middle portion is narrower than the upper portion and the lower portion.

Abstract: A method of forming an interconnect structure for an integrated circuit device is provided. The method includes forming a conductive line layer over a semiconductor substrate. The conductive line layer includes a metal line. The method also includes forming a conductive pillar on and in contact with the metal line. The method further includes depositing a dielectric layer over the conductive line layer to cover the conductive pillar, and etching the dielectric layer to form a trench. The conductive pillar is exposed through the trench. In addition, the method includes filling the trench with a conductive material to form a conductive line.

Abstract: A memory device includes a bottom electrode, an MTJ stack, and a top electrode. The bottom electrode has a lower sidewall and an upper sidewall above the lower sidewall and laterally set back from the lower sidewall. The MTJ stack is over the bottom electrode. The MTJ stack includes a bottom magnetic layer, a tunnel barrier layer over the bottom magnetic layer and a top magnetic layer over the tunnel barrier layer. The bottom magnetic layer has a sidewall coterminous with the upper sidewall of the bottom electrode. The top magnetic layer has a sidewall laterally set back from the upper sidewall of the bottom electrode. The top electrode is over the MTJ stack.

Abstract: A semiconductor structure includes a conductive feature disposed over a semiconductor substrate, a via disposed in a first interlayer dielectric (ILD) layer over the conductive feature, and a metal-containing etch-stop layer (ESL) disposed on the via, where the metal-containing ESL includes a first metal and is resistant to etching by a fluorine-containing etchant. The semiconductor structure further includes a conductive line disposed over the metal-containing ESL, where the conductive line includes a second metal different from the first metal and is etchable by the fluorine-containing etchant, and where the via is configured to interconnect the conductive line to the conductive feature. Furthermore, the semiconductor structure includes a second ILD layer disposed over the first ILD layer.

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a metal feature in a first dielectric layer, an etch stop layer (ESL) over the metal feature, a second dielectric layer over the ESL, a third dielectric layer over the second dielectric layer, a patterned hard mask having a trench. The method further includes forming a via opening through the trench in the patterned hard mask, the second dielectric layer, the third dielectric layer, and the ESL to expose the metal feature, depositing a metal layer in the trench and the via opening to form a metal line and a metal contact via, respectively, and over the workpiece, removing the patterned hard mask between the metal line and the metal contact via, and depositing a fourth dielectric layer between the metal line and the metal contact via.

Abstract: An semiconductor device includes a first dielectric layer, an etch stop layer, an interconnect structure, and a second dielectric layer. The etch stop layer is over the first dielectric layer. The interconnect structure includes a conductive via in the first dielectric layer and the etch stop layer, a conductive line over the conductive via, an intermediate conductive layer over the conductive line, and a conductive pillar over the intermediate conductive layer. The interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via. The second dielectric layer surrounds the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.

Abstract: An aerosol generating apparatus is disclosed. The apparatus includes a liquid container, an adaptor detachably engaged with the liquid container, and a driving element accommodated by the adaptor. A perforated membrane, through which a liquid can pass through, is disposed at an exit of the liquid container. Moreover, the perforated membrane faces the driving element. The driving element includes a substrate coupled with a piezoelectric element. The substrate includes an aperture that corresponds to the perforated membrane when the liquid container and the adaptor are engaged so as to receive liquid. Moreover, when the liquid container and the adaptor are engaged, the perforated membrane is in contact with the substrate at the proximity of the aperture, which is about the substrate's center. The adaptor is configured to contact the substrate's periphery only. The resulting apparatus generates aerosol at a desired efficiency with less energy needed.

Abstract: An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode, and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure, and a first dielectric layer surrounding the spacers. The MRAM device further includes a patterned etch stop layer on the first dielectric layer and the spacers. In addition, the MRAM device includes a second dielectric layer on the patterned etch stop layer, and a top electrode via embedded in the second dielectric layer and in contact with the top electrode and the patterned etch stop layer.

Abstract: A method for forming a semiconductor structure includes forming a first cap layer over a metal layer. The method also includes patterning the metal layer and the first cap layer to form openings exposing the gate structure, and forming a first dielectric layer in the openings, and patterning the first cap layer to form a via cap plug over the metal layer. The method also includes forming a second dielectric layer over the via cap plug and the metal layer, and forming a trench in the second dielectric material to expose the via cap plug. The method also includes removing the via cap plug to enlarge the trench and filling the trench with a conductive material.

Abstract: An aerosol generating apparatus is disclosed. The apparatus includes a liquid container, an adaptor and a driving element. The liquid container includes a perforated membrane through which a liquid can permeate. The liquid container further includes a first mating element. The adaptor includes a second mating element. The driving element includes a piezoelectric element coupled to a substrate. The driving element is accommodated by the adaptor and the substrate includes an aperture and a projection. The first and second mating elements are adapted to detachably and slidably mate with each other such that the aperture of the substrate aligns proximately to the center of the perforated membrane. The first and second mating elements are further adapted for relative movement along a sliding axis. The projection is adapted to press against the perforated membrane.

Abstract: A method includes depositing a bottom electrode layer, a resistance switching element layer, and a top electrode layer over a first dielectric layer; etching the top electrode layer and the resistance switching element layer to form a resistance switching element over the bottom electrode layer and a top electrode over the resistance switching element; depositing a metal-containing compound layer over the top electrode, the resistance switching element, and the bottom electrode layer; and etching the metal-containing compound layer and the bottom electrode layer to form a bottom electrode over the first dielectric layer.

Abstract: A memory device includes a bottom electrode, a resistance switching element, a top electrode, a first spacer, and a metal-containing compound layer. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching element. The first spacer is disposed along a sidewall of the resistance switching element. The metal-containing compound layer is disposed along a sidewall of the first spacer, in which the first spacer is between the metal-containing compound layer and the resistance switching element.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a lower conductive structure arranged over a substrate. An etch stop layer is arranged over the lower conductive structure, and a first interconnect dielectric layer is arranged over the etch stop layer. The integrated chip further includes an interconnect via that extends through the first interconnect dielectric layer and the etch stop layer to directly contact the lower conductive structure. A protective layer surrounds outermost sidewalls of the interconnect via.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask having at least two separate portions; forming spacers along sidewalls of the at least two portions of the first hard mask with a space between the spacers; forming a second hard mask in the space; forming a first cut in the at least two portions of the first hard mask; forming a second cut in the second hard mask; and depositing a cut hard mask in the first cut and the second cut.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first conductive pattern and a conductive mask disposed over the first conductive pattern. The semiconductor device further includes a second conductive pattern disposed over the conductive mask, and electrically connecting with the first conductive pattern through the conductive mask. The conductive mask has a lower etch rate to a predetermined etchant than the second conductive pattern. A method for forming the semiconductor device is also provided.

Abstract: A method of forming an interconnect structure for an integrated circuit device is provided. The method includes forming a wiring layer having a metal line, and forming a patterned disposable material layer over the wiring layer and having an opening aligned with the metal line. The method also includes depositing a first dielectric film in the opening and in contact with the metal line, and removing the patterned disposable material layer to leave the first dielectric film. The method further includes depositing a second dielectric film over the first dielectric film, and etching the second dielectric film to form a trench above the first dielectric film. In addition, the method includes removing a portion of the first dielectric film to form a via hole under the trench, and depositing a conductive material in the trench and the via hole.

Abstract: An interconnect structure includes a first dielectric layer, an etch stop layer, a conductive via, a conductive line, an intermediate conductive layer, a conductive pillar, and a second dielectric layer. The etch stop layer is over the first dielectric layer. The conductive via is in the first dielectric layer and the etch stop layer. The conductive line is over the conductive via. The intermediate conductive layer is over the conductive line. The conductive pillar is over the intermediate conductive layer. The second dielectric layer surrounds the conductive line, the intermediate conductive layer, and the conductive pillar, and a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.

Abstract: A method and a circuit system for driving a nebulizer are provided. When the nebulizer receives acoustic waves, a control circuit extracts audio signals from the acoustic waves. Afterwards, the control circuit determines if the audio signals are within a predetermined frequency range, and can determine whether or not to drive a circuit to produce an aerosol based on the audio signals. Further, a volume of the acoustic waves can also be used to determine whether or not to produce the aerosol, and also determine an output rate of the aerosol. The circuit system of the nebulizer includes an audio receiver for receiving the acoustic waves, an aerosol generator for producing the aerosol, and the control circuit used to control a driving circuit of the aerosol generator to drive a vibrational element to produce the aerosol through vibration in response to the audio signals and the volume.