Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, an encapsulant, a protection layer and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The encapsulant is disposed over the interposer and laterally encapsulating the at least one semiconductor die. The connectors are disposed on the second surface of the interposer and electrically connected with the at least one semiconductor die through the interposer. The protection layer is disposed on the second surface of the interposer and surrounding the connectors. The sidewalls of the interposer include slanted sidewalls connected to the second surface, and the protection layer is in contact with the slant sidewalls of the interposer.

Abstract: A SAR ADC includes: a sample-hold (S/H) circuit sampling an input voltage to generate a S/H output signal; a DAC generating a DAC output signal; a comparator comparing the DAC output signal with the S/H output signal to generate a comparison output signal; a SAR combinational digital circuit group; a multiplexer circuit; and a plurality of registers for registering the comparison output signal as register output signals and outputting as an output signal of the SAR ADC. The SAR combinational digital circuit group generates a plurality of first and second SAR output signals based on the register output signals. The multiplexer circuit is controlled by on the register output signals to select among the first and the second SAR output signals as a plurality of multiplexer output signals for sending to the DAC. A capacitor coupling relationship of the DAC is controlled by the multiplexer output signals.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: A semiconductor package includes semiconductor bridge, first and second multilayered structures, first encapsulant, and a pair of semiconductor dies. Semiconductor dies of the pair include semiconductor substrate and conductive pads disposed at front surface of semiconductor substrate. Semiconductor bridge electrically interconnects the pair of semiconductor dies. First multilayered structure is disposed on rear surface of one semiconductor die. Second multilayered structure is disposed on rear surface of the other semiconductor die. First encapsulant laterally wraps first multilayered structure, second multilayered structure and the pair of semiconductor dies. Each one of first multilayered structure and second multilayered structure includes a top metal layer, a bottom metal layer, and an intermetallic layer. Each one of first multilayered structure and second multilayered structure has surface coplanar with surface of first encapsulant.

Abstract: A method of manufacturing a semiconductor device, the method includes bonding a first die and a second die to a first side of a wafer, wherein after bonding the first die and the second die to the first side of the wafer, a gap is disposed between the first die and the second die, wherein a first portion of the gap has a first width that is larger than a second width of a second portion of the gap, depositing a third dielectric layer on top surfaces and sidewalls of the first die and the second die, as well as on a bottom surface within the gap, forming a molding material over the third dielectric layer to fill the gap, and performing a planarization process to expose top surfaces of the first die and the second die.

Abstract: A package structure including a first semiconductor die, a second semiconductor die, a molding compound, a bridge structure, through insulator vias, an insulating encapsulant, conductive bumps, a redistribution layer and seed layers is provided. The molding compound encapsulates the first and second semiconductor die. The bridge structure is disposed on the molding compound and electrically connects the first semiconductor die with the second semiconductor die. The insulating encapsulant encapsulates the bridge structure and the through insulator vias. The conductive bumps are electrically connecting the first and second semiconductor dies to the bridge structure and the through insulator vias. The redistribution layer is disposed on the insulating encapsulant and over the bridge structure. The seed layers are respectively disposed in between the through insulator vias and the redistribution layer.

Abstract: An information processing method includes, when determining that a target node in a to-be-processed chassis is used as a management node of the to-be-processed chassis, obtaining a virtual address and assigning the virtual address to the target node, notifying a subnet corresponding to the to-be-processed chassis with the virtual address, and performing communication with a target programmable module of the to-be-processed chassis through the target node and management on data of the to-be-processed chassis. The virtual address is used to inform that the target node is the management node.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first device die; a second device die, stacked on the first device die; and first electrical connectors and second electrical connectors, disposed in between the first and second device dies. A first pitch between the first electrical connectors is greater than a second pitch between the second electrical connectors. The first and second electrical connectors respectively comprise a solder joint and first metallic layers lying at opposite sides of the solder joint and formed of a first metallic material. Each of the second electrical connectors further comprises at least one second metallic layer formed of a second metallic material.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, an encapsulant, a protection layer and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The encapsulant is disposed over the interposer and laterally encapsulating the at least one semiconductor die. The connectors are disposed on the second surface of the interposer and electrically connected with the at least one semiconductor die through the interposer. The protection layer is disposed on the second surface of the interposer and surrounding the connectors. The sidewalls of the interposer include slanted sidewalls connected to the second surface, and the protection layer is in contact with the slant sidewalls of the interposer.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: A shift control method in manufacture of semiconductor device includes at least the following step. A plurality of semiconductor dies is encapsulated with an insulating encapsulation over a carrier, where at least portions of the plurality of semiconductor dies are shifted after encapsulating. A lithographic pattern is formed at least on the plurality of semiconductor die, where forming the lithographic pattern includes compensating for a shift in a position of the portions of the plurality of semiconductor dies.

Abstract: A method of forming a semiconductor device includes attaching a metal foil to a carrier, the metal foil being pre-made prior to attaching the metal foil; forming a conductive pillar on a first side of the metal foil distal the carrier; attaching a semiconductor die to the first side of the metal foil; forming a molding material around the semiconductor die and the conductive pillar; and forming a redistribution structure over the molding material.

Abstract: A shift control method in manufacture of semiconductor device includes: calculating a difference of a relative position between a conductive connector of a semiconductor die and a conductive pad of the semiconductor die relative to a reference mark on the semiconductor die; placing the semiconductor die over a carrier, wherein the difference is compensated when placing the semiconductor die over the carrier; and forming a lithographic pattern on the conductive connector of the semiconductor die.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: Disclosed is a twisting posture training aid for sports, including: an inertia-direction marker arrangement; a torso twist optical pointing arrangement which includes a banding arrangement, a first optical pointer, and a first pivot, such that when the user is at address, the torso marker corresponding to the inertia direction is projected onto the operation plane; an upper limb motion optical pointing arrangement which includes a fastener arrangement, a second optical pointer, and a second pivot, such that when the user is at address, the upper limb marker corresponding to the inertia direction is projected onto the operation plane.

Abstract: A method used for object tracking includes: using a specific object model to generate a first vector of a first ratio object and a second vector of a second ratio object of an image in an object detection bounding box of a specific frame; generating an identity label of an object within the bounding box according to the first vector, the second vector, and M first ratio reference vectors and M second ratio reference vectors stored in an object vector database.

Abstract: A method of performing person re-identification includes: obtaining a person feature vector according to an extracted image containing a person; obtaining state information of the person according to a state of the person in the extracted image; comparing the person feature vector with a plurality of registered person feature vectors in a database; when the person feature vector successfully matches a first registered person feature vector of the plurality of registered person feature vectors, identifying the person as a first identity corresponding to the first registered person feature vector; and selectively utilizing the person feature vector to update one of the first registered person feature vector and at least one second registered person feature vector that correspond to the first identity according to the state information.

Abstract: A method of forming a semiconductor package includes: forming a first package component including a first and a second conductive bumps; forming a second package component including a third and a fourth conductive bumps, where dimensions of the first and second conductive bumps are less than dimensions of the third and fourth conductive bumps; and forming a first and a second joint structures to bond the second package component to the first package component. A first angle between an exposed sidewall of the first conductive bump and a tangent line at an end point of a boundary of the first joint structure on the sidewall of the first conductive bump is less than a second angle between an exposed sidewall of the second conductive bump and a tangent line at an end point of a boundary of the second joint structure on the sidewall of the second conductive bump.

Abstract: A package structure and method of forming the same are provided. The package structure includes a first die and a second die disposed side by side, a first encapsulant laterally encapsulating the first and second dies, a bridge die disposed over and connected to the first and second dies, and a second encapsulant. The bridge die includes a semiconductor substrate, a conductive via and an encapsulant layer. The semiconductor substrate has a through substrate via embedded therein. The conductive via is disposed over a back side of the semiconductor substrate and electrically connected to the through substrate via. The encapsulant layer is disposed over the back side of the semiconductor substrate and laterally encapsulates the conductive via. The second encapsulant is disposed over the first encapsulant and laterally encapsulates the bridge die.

Abstract: Embodiments of the present disclosure disclose a heating body sensing method, apparatus, device, and storage medium. A detection temperature is acquired by receiving a first detection signal, the change of a heat source is acquired according to a receiving state of a second detection signal, and a sensing signal is generated according to the first detection signal and the receiving state of the second detection signal to determine the presence condition of a heating body. Therefore, the sensing cost of the heating body may be reduced, and the sensing efficiency may be improved.