Abstract: A system on chip (SoC) die package is attached to a redistribution structure of a semiconductor device package such that a top surface of the SoC die package is above a top surface of an adjacent memory die package. This may be achieved through the use of various attachment structures that increase the height of the SoC die package. After encapsulating the memory die package and the SoC die package in an encapsulation layer, the encapsulation layer is grinded down. The top surface of the SoC die package being above the top surface of the adjacent memory die package results in the top surface of the SoC die package being exposed through the encapsulation layer after the grinding operation. This enables heat to be dissipated through the top surface of the SoC die package.

Abstract: A package structure and methods for forming the package structure are provided. The package structure includes a package component, an encapsulant disposed around the package component, and a redistribution structure disposed over the package component and the encapsulant. The package component includes a substrate, a protection structure, which includes an organic material, over a first surface of the substrate, and a multi-layered structure encapsulated by the protection structure. Sidewalls of the multi-layered structure are spaced apart from the encapsulant by the protection structure.

Abstract: A method of manufacturing a semiconductor device includes forming a first bonding layer over a substrate of a first wafer, the first wafer including a first semiconductor die and a second semiconductor die, performing a first dicing process to form two grooves that extend through the first bonding layer, the two grooves being disposed between the first semiconductor die and the second semiconductor die, performing a second dicing process to form a trench that extends through the first bonding layer and partially through the substrate of the first wafer, where the trench is disposed between the two grooves, and thinning a backside of the substrate of the first wafer until the first semiconductor die is singulated from the second semiconductor die.

Abstract: Computer-implemented methods for training a neural network, as well as for implementing audio encoders and decoders via trained neural networks, are provided. The neural network may receive an input audio signal, generate an encoded audio signal and decode the encoded audio signal. A loss function generating module may receive the decoded audio signal and a ground truth audio signal, and may generate a loss function value corresponding to the decoded audio signal. Generating the loss function value may involve applying a psychoacoustic model. The neural network may be trained based on the loss function value. The training may involve updating at least one weight of the neural network.

Abstract: The disclosed computer-implemented method may include (1) accessing a first media data object and a different, second media data object that, when played back, each render temporally sequenced content, (2) comparing first temporally sequenced content represented by the first media data object with second temporally sequenced content represented by the second media data object to identify a set of common temporal subsequences between the first media data object and the second media data object, (3) identifying a set of edits relative to the set of common temporal subsequences that describe a difference between the temporally sequenced content of the first media data object and the temporally sequenced content of the second media data object, and (4) executing a workflow relating to the first media data object and/or the second media data object based on the set of edits. Various other methods, systems, and computer-readable media are also disclosed.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure, a backside dielectric layer, conductive terminals, an electronic device, and an underfill is provided. The semiconductor die laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes redistribution conductive layers and thermal enhancement structures electrically insulated from the redistribution conductive layers, and the thermal enhancement structures are thermally coupled to the semiconductor die. The backside dielectric layer is disposed on the redistribution circuit structure. The conductive terminals penetrate through the backside dielectric layer. The electronic device is disposed over the backside dielectric layer and electrically connected to the redistribution circuit structure through the conductive terminals.

Abstract: A package includes a first molding compound layer, a conductive via embedded in the first molding compound layer, a semiconductor device, a redistribution structure and a second molding compound layer. The semiconductor device and the redistribution structure are respectively disposed on opposite sides of the first molding compound layer, wherein the semiconductor device is electrically connected to the redistribution structure through the conductive via. The second molding compound layer is disposed on the first molding compound layer, wherein the semiconductor device is encapsulated by the second molding compound layer.

Abstract: Disclosed are a semiconductor package and a manufacturing method of a semiconductor package. In one embodiment, the semiconductor package includes an interposer substrate, a plurality of semiconductor dies, one or more heat dissipation elements and an encapsulant. The plurality of semiconductor dies are disposed on the interposer substrate. The one or more heat dissipation elements are disposed on the plurality of semiconductor dies. The encapsulant is disposed on the interposer substrate and surrounds the plurality of semiconductor dies and the one or more heat dissipation elements.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate electrode, a first spacer, and a first contact etch stop layer (CESL). The semiconductor substrate includes a fin structure. The gate electrode is over the fin structure. The first spacer is over the fin structure and on a lateral side of the gate electrode, wherein a top surface of the first spacer is inclined towards the gate electrode. The first CESL is over the fin structure and contacting the first spacer, wherein an angle between the top surface of the first spacer and a sidewall of the first CESL is less than about 140°.

Abstract: Disclosed are a semiconductor package and a manufacturing method of a semiconductor package. In one embodiment, the semiconductor package includes an interposer substrate, a plurality of semiconductor dies, a first encapsulant, at least one heat dissipation element and a second encapsulant. The plurality of semiconductor dies are disposed on the interposer substrate. The first encapsulant is disposed on the interposer substrate and surrounds the plurality of semiconductor dies. The at least one heat dissipation element is disposed on the plurality of semiconductor dies. The second encapsulant is disposed on the first encapsulant and surrounds the at least one heat dissipation element.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, an encapsulant, a protection layer and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The encapsulant is disposed over the interposer and laterally encapsulating the at least one semiconductor die. The connectors are disposed on the second surface of the interposer and electrically connected with the at least one semiconductor die through the interposer. The protection layer is disposed on the second surface of the interposer and surrounding the connectors. The sidewalls of the interposer include slanted sidewalls connected to the second surface, and the protection layer is in contact with the slant sidewalls of the interposer.

Abstract: A method includes forming a first package component, which comprises forming a first dielectric layer having a first top surface, and forming a first conductive feature. The first conductive feature includes a via embedded in the first dielectric layer, and a metal bump having a second top surface higher than the first top surface of the first dielectric layer. The method further includes dispensing a photo-sensitive layer, with the photo-sensitive layer covering the metal bump, and performing a photolithography process to form a recess in the photo-sensitive layer. The metal bump is exposed to the recess, and the photo-sensitive layer has a third top surface higher than the metal bump. A second package component is bonded to the first package component, and a solder region extends into the recess to bond the metal bump to a second conductive feature in the second package component.

Abstract: A method of forming a semiconductor structure includes: forming a first redistribution structure on a first side of a wafer, the first redistribution structure including dielectric layers and conductive features in the dielectric layers; forming grooves in the first redistribution structure, the grooves exposing sidewalls of the dielectric layers and the wafer, the grooves defining a plurality of die attaching regions; bonding a plurality of dies to the first redistribution structure in the plurality of die attaching regions; forming a first molding material on the first side of the wafer around the plurality of dies, the first molding material filling the grooves; forming a passivation layer on a second side of the wafer opposing the first side; and dicing along the grooves from the second side of the wafer to form a plurality of individual semiconductor packages, each of the plurality of individual semiconductor packages including a respective die.

Abstract: A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

Abstract: A package component for carrying a device package and an insulating layer thereon includes a molding layer, first and second redistribution structures disposed on two opposite sides of the molding layer, a semiconductor die, and a through interlayer via (TIV). A hardness of the molding layer is greater than that of the insulating layer that covers the device package. The device package is mounted on the second redistribution structure, and the insulating layer is disposed on the second redistribution structure opposite to the molding layer. The semiconductor die is embedded in the molding layer and electrically coupled to the device package through the second redistribution structure. The TIV penetrates through the molding layer to connect the first and the second redistribution structure. An electronic device and a manufacturing method thereof are also provided.

Abstract: Computer-implemented methods for training a neural network, as well as for implementing audio encoders and decoders via trained neural networks, are provided. The neural network may receive an input audio signal, generate an encoded audio signal and decode the encoded audio signal. A loss function generating module may receive the decoded audio signal and a ground truth audio signal, and may generate a loss function value corresponding to the decoded audio signal. Generating the loss function value may involve applying a psychoacoustic model. The neural network may be trained based on the loss function value. The training may involve updating at least one weight of the neural network.

Abstract: An integrated circuit package and a method of forming the same are provided. A method includes stacking a plurality of integrated circuit dies on a wafer to form a die stack. A bonding process is performed on the die stack. The bonding process mechanically and electrically connects adjacent integrated circuit dies of the die stack to each other. A dam structure is formed over the wafer. The dam structure surrounds the die stack. A first encapsulant is formed over the wafer and between the die stack and the dam structure. The first encapsulant fills gaps between the adjacent integrated circuit dies of the die stack. A second encapsulant is formed over the wafer. The second encapsulant surrounds the die stack, the first encapsulant and the dam structure.

Abstract: A chip package structure is provided. The chip package structure includes a substrate. The chip package structure also includes a first chip structure and a second chip structure over the substrate. The chip package structure further includes an anti-warpage bar between the first chip structure and the second chip structure. In addition, the chip package structure includes an underfill layer between the first chip structure and the second chip structure and between the anti-warpage bar and the substrate. A topmost surface of the underfill layer is lower than a top surface of the anti-warpage bar.

Abstract: Provided are a package and a method of manufacturing the same. The package includes a first die, a second die, a bridge structure, an encapsulant, and a redistribution layer (RDL) structure. The first die and the second die are disposed side by side. The bridge structure is disposed over the first die and the second die to electrically connect the first die and the second die. The encapsulant laterally encapsulates the first die, the second die, and the bridge structure. The RDL structure is disposed over a backside of the bridge structure and the encapsulant. The RDL structure includes an insulating structure and a conductive pattern, the conductive pattern is disposed over the insulating structure and extending through the insulating structure and a substrate of the bridge structure, so as to form at least one through via in the substrate of the bridge structure.

Abstract: The disclosed computer-implemented method may include (1) accessing a first media data object and a different, second media data object that, when played back, each render temporally sequenced content, (2) comparing first temporally sequenced content represented by the first media data object with second temporally sequenced content represented by the second media data object to identify a set of common temporal subsequences between the first media data object and the second media data object, (3) identifying a set of edits relative to the set of common temporal subsequences that describe a difference between the temporally sequenced content of the first media data object and the temporally sequenced content of the second media data object, and (4) executing a workflow relating to the first media data object and/or the second media data object based on the set of edits. Various other methods, systems, and computer-readable media are also disclosed.