Patents by Inventor Chih-Wen Hsiao

Chih-Wen Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8164113
    Abstract: An electrostatic discharge (ESD) structure for a 3-dimensional (3D) integrated circuit (IC) through-silicon via (TSV) device is provided. The ESD structure includes a substrate, a TSV device which is formed through the substrate and is equivalent to a resistance-inductance-capacitance (RLC) device, and at least one ESD device which is disposed in the substrate and electrically connected to one end of the TSV device. The ESD structure can protect the 3D IC TSV device.
    Type: Grant
    Filed: September 22, 2009
    Date of Patent: April 24, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Sheng Lin, Chih-Wen Hsiao, Keng-Li Su
  • Patent number: 7894274
    Abstract: A memory with improved write current is provided, including a bit line, a write switch and a control circuit. The write switch is coupled between a voltage source and the bit line, and has a control terminal. Based on a bit line select signal, the control circuit controls the electric conductance of the write switch and discharges/charges the parasitic capacitors of the write switch. The voltage source is turned on after the control terminal of the write switch reaches a pre-determined voltage level.
    Type: Grant
    Filed: June 5, 2009
    Date of Patent: February 22, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chih Sheng Lin, Min-Chuan Wang, Chih-Wen Hsiao, Keng-Li Su
  • Publication number: 20100237386
    Abstract: An electrostatic discharge (ESD) structure for a 3-dimensional (3D) integrated circuit (IC) through-silicon via (TSV) device is provided. The ESD structure includes a substrate, a TSV device which is formed through the substrate and is equivalent to a resistance-inductance-capacitance (RLC) device, and at least one ESD device which is disposed in the substrate and electrically connected to one end of the TSV device. The ESD structure can protect the 3D IC TSV device.
    Type: Application
    Filed: September 22, 2009
    Publication date: September 23, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Sheng Lin, Chih-Wen Hsiao, Keng-Li Su
  • Publication number: 20100153043
    Abstract: A monitoring method for Through-Silicon Vias (TSVs) of a three-dimensional integrated circuit (3D IC) is provided, wherein the 3D IC includes a plurality of TSVs, and the method includes: providing a plurality of inverters; connecting the inverters with the TSVs as a circuit; enabling the circuit to oscillate; measuring an output signal on an output end of one of the inverters; and determining the characteristic of TSVs of the 3D IC based on the output signal.
    Type: Application
    Filed: May 4, 2009
    Publication date: June 17, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Keng-Li SU, Chih Sheng LIN, Chih-Wen HSIAO
  • Publication number: 20100118617
    Abstract: A memory with improved write current is provided, including a bit line, a write switch and a control circuit. The write switch is coupled between a voltage source and the bit line, and has a control terminal. Based on a bit line select signal, the control circuit controls the electric conductance of the write switch and discharges/charges the parasitic capacitors of the write switch. The voltage source is turned on after the control terminal of the write switch reaches a pre-determined voltage level.
    Type: Application
    Filed: June 5, 2009
    Publication date: May 13, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih Sheng Lin, Min-Chuan Wang, Chih-Wen Hsiao, Keng-Li Su
  • Patent number: 7582898
    Abstract: This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.
    Type: Grant
    Filed: July 20, 2006
    Date of Patent: September 1, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Yu-Wu Wang, Yi-Kai Wang, Chen-Pang Kung, Chih-Wen Hsiao
  • Publication number: 20090096738
    Abstract: This invention provides a driving circuit for simultaneously driving three-color bistable liquid crystals, which employs a voltage-shift circuit to provide different-color bistable liquid crystals with respective level-shift voltages. A grey-scale voltage is respectively added to the respective level-shift voltages. By this invention, the whole grey-scale voltages are capable of falling in the voltage ranges for displaying grey scales for the different-color bistable liquid crystals. The grey-scale display can be optimized.
    Type: Application
    Filed: August 12, 2008
    Publication date: April 16, 2009
    Inventors: Chih-Jen CHEN, Chih-Wen HSIAO, Tai-Ann CHEN
  • Publication number: 20070257252
    Abstract: This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.
    Type: Application
    Filed: July 20, 2006
    Publication date: November 8, 2007
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yu-Wu Wang, Yi-Kai Wang, Chen-Pang Kung, Chih-Wen Hsiao