Abstract: A video processing apparatus, a video processing method thereof and a non-transitory computer readable medium are provided. In the method, at least two original video files are obtained, where each original video file is recorded in different shoot direction. Each video frame of the original video file is stitched, to generate multiple stitched video frame. In response to generating each stitched video frame, each stitched video frame is provided for use of playback directly without encoding those stitched video frame into a video file. Accordingly, a real-time and smooth playback effect is achieved.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate; an active circuit portion, disposed on the substrate; a dielectric portion, disposed on the active circuit portion, wherein a hole is formed within the dielectric portion and the hole penetrates through the dielectric portion; and a radiating metal sheet, disposed on the dielectric portion; wherein the active circuit portion and the radiating metal sheet are coupled through the hole.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate; an active circuit portion including at least an active component and formed on a topside of the semiconductor device; and a radiating metal sheet formed on a backside of the semiconductor device. A hole is formed within the substrate and the hole penetrates through the substrate. The active circuit portion and the radiating metal sheet are coupled through the hole.

Abstract: A transition structure disposed in a package is disclosed. The transition structure comprises a first ground lead and a second ground lead; and a signal lead, disposed between the first ground lead and the second ground lead, wherein the first ground lead and the second ground lead have an exterior edge and an interior edge, the signal lead is coupled to a metal line formed on a printed circuit board (PCB) and a signal terminal of the die within the package; wherein an exterior gap formed between the first ground lead and the second ground lead at the exterior edge is wider than an interior gap formed between the first ground lead and the second ground lead at the interior edge.

Abstract: A GaAs (Gallium Arsenide) cell is provided. The GaAs cell comprises at least a GaAs substrates; a plurality of drain electrodes and a plurality of source electrodes, disposed on the at least a GaAs substrates; a gate electrode, disposed between the plurality of drain electrodes and the plurality of source electrodes, elongated along a first direction; a first anchor at a first end of the gate electrode; and a second anchor at a second end of the gate electrode; wherein a gate length of the gate electrode on a second direction is smaller than both a first width of the first anchor and a second width of the second anchor along the second direction.

Abstract: A file managing method for a digital apparatus includes (a) establishing a folder corresponding to a file type generated in an operational mode of the digital apparatus, and (b) storing a file according to its file type to the folder corresponding to the file type established in step (a).

Abstract: A video processing apparatus, a video processing method thereof and a non-transitory computer readable medium are provided. In the method, at least two original video files are obtained, where each original video file is recorded in different shoot direction. Each video frame of the original video file is stitched, to generate multiple stitched video frame. In response to generating each stitched video frame, each stitched video frame is provided for use of playback directly without encoding those stitched video frame into a video file. Accordingly, a real-time and smooth playback effect is achieved.

Abstract: An EMI testing deviation correction system includes an EMI testing facility. A signal provisioning device in the EMI testing facility includes a power connector coupling coupled to a networking port. A signal generator includes a power connector that is connected to the power connector coupling, and generates and provides signals having first signal characteristics through the power connector. An ISN device is coupled to the first networking port to receive signals that are provided by the signal generator and transmitted through the signal provisioning device. A signal receiver device is coupled to the ISN device and receives signals transmitted through the signal provisioning device and the ISN device. The signals received by the signal receiver device include second signal characteristics, and the difference between the second signal characteristics and the first signal characteristics provides an indication of at least one correction for the EMI testing facility.

Abstract: A GaAs (Gallium Arsenide) cell is provided. The GaAs cell comprises a drain electrode and a source electrode, disposed on the GaAs substrate; a plurality of gate electrodes, disposed between the drain electrode and the source electrode, elongated on a first direction, wherein a gate electrode among the plurality of gate electrodes comprises a first end and a second end; a plurality of first anchors; a plurality of second anchors; wherein a first gate electrode and a second gate electrode among the plurality of gate electrodes are spaced by a gate-to-gate spacing, the first gate electrode and the drain electrode are spaced by a first gate-to-terminal spacing, and the gate-to-gate spacing is smaller than twice of the first gate-to-terminal spacing.

Abstract: A semiconductor device is disclosed. The semiconductor device comprises a substrate; an active circuit portion, disposed on the substrate; a dielectric portion, disposed on the active circuit portion, wherein a hole is formed within the dielectric portion and the hole penetrates through the dielectric portion; and a radiating metal sheet, disposed on the dielectric portion; wherein the active circuit portion and the radiating metal sheet are coupled through the hole.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate; an active circuit portion including at least an active component and formed on a topside of the semiconductor device; and a radiating metal sheet formed on a backside of the semiconductor device. A hole is formed within the substrate and the hole penetrates through the substrate. The active circuit portion and the radiating metal sheet are coupled through the hole.

Abstract: A transition structure disposed in a package is disclosed. The transition structure comprises a first ground lead and a second ground lead; and a signal lead, disposed between the first ground lead and the second ground lead, wherein the first ground lead and the second ground lead have an exterior edge and an interior edge, the signal lead is coupled to a metal line formed on a printed circuit board (PCB) and a signal terminal of the die within the package; wherein an exterior gap formed between the first ground lead and the second ground lead at the exterior edge is wider than an interior gap formed between the first ground lead and the second ground lead at the interior edge.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and a backside metal formed under a backside of the semiconductor substrate; wherein a hollow slot is formed within the backside metal, and a projection of the winding structure is within the hollow slot.

Abstract: A computing device includes a rail mount chassis and a processor. The rail mount chassis includes a pressure sensor. The processor monitors the pressure sensor to obtain pressure sensor data; estimates a load exerted on a rail of the rail mount chassis using the obtained pressure sensor data; makes a determination that the load exerted on the rail exceeds a load rating of the rail; and in response to the determination, notifies a user that the rail may be damaged.

Abstract: An image processing system is provided in the invention. The image processing system includes a head-mounted display and an image processing device. The image processing device includes a processor. The processor transmits helmet information corresponding to the head-mounted display to a User Mode Driver. According to the helmet information and a first framebuffer which is obtained from a Kernel Mode Driver, the User Mode Driver generates a second framebuffer. The processor directly generates display information according to the second framebuffer, and the head-mounted display receives the display information and displays a picture according to the display information.

Abstract: An image processing system is provided in the invention. The image processing system includes a head-mounted display and an image processing device. The image processing device includes a processor. The processor transmits setting information of the head-mounted display to a picture driver. The picture driver obtains 3D data from a User Mode Driver and generates a left-eye picture and a right-eye picture that correspond to the head-mounted display according to the setting information and the 3D data. The processor transmits the left-eye picture and the right-eye picture to the head-mounted display and the head-mounted display displays a picture according to the left-eye picture and the right-eye picture.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and a backside metal formed under a backside of the semiconductor substrate; wherein a hollow slot is formed within the backside metal, and a projection of the winding structure is within the hollow slot.

Abstract: A package structure is disclosed. The package structure includes at least a lead, for delivering at least a signal; at least a routing layer, connected to the at least a lead, where at least a first hole is formed through the at least a routing layer; a die, disposed on the at least a routing layer, where at least a second hole is formed through the die, and the die generates or receives the at least a signal; and a molding cap, for covering the at least a routing layer and the die; where the at least a signal is delivered through the at least a first hole and the at least a second hole.

Abstract: An anti-plasma adhesive tape utilized for manufacturing a semiconductor package includes a substrate; and an adhesive layer formed on the substrate, wherein the adhesive layer is selected from a group composed of acrylic adhesive, light-curable resin and photoinitiator. The anti-plasma adhesive tape is attached to a backside of a lead frame of the semiconductor package before a plasma-cleaning process and removed from the lead frame after a molding process. After the anti-plasma adhesive tape is cured by irradiating an energy ray and removed from the lead frame, there is no residual adhesive left on a molding compound of the semiconductor package.

Abstract: A radio frequency (RF) device includes a chip comprising a plurality of vias and at least a hot via; a signal lead and a ground lead disposed under a back side of the chip; and a signal metal sheet, a first ground metal sheet and a second ground metal sheet disposed on a top side of the chip. The signal metal sheet crosses over the first gap formed between the signal lead and the ground lead. The first ground metal sheet and the second ground metal sheet are coupled to the ground lead through the plurality of vias. The first ground metal sheet and the second ground metal sheet substantially surround the signal metal sheet.