Abstract: An antenna module includes a ground radiator, a first antenna, and a second antenna. The first antenna comprises a first radiator, a second radiator, and a third radiator. The first radiator and the second radiator resonate at a low frequency band and a first high frequency band, and a part of the first radiator and the third radiator resonate at a second high frequency band. The second antenna includes a fourth radiator, the second radiator, and a connecting section. The connecting section is connected between the fourth radiator and the second radiator. A part of the fourth radiator, the connecting section, and the second radiator resonate at the low frequency band and the second high frequency band, and the fourth radiator, the connecting section, and a part of the second radiator resonate at the first high frequency band.

Abstract: A method includes forming first semiconductive sheets over a substrate and arranged in a vertical direction, and second semiconductive sheets over the substrate and arranged in the vertical direction, wherein a number of the second semiconductive sheets is different than a number of the first semiconductive sheets; forming first source/drain regions on either side of each of the first semiconductive sheets, and second source/drain regions on either side of each of the second semiconductive sheets; forming a first gate around each of the first semiconductive sheets, and a second gate around each of the second semiconductive sheets.

Abstract: A pulmonary function identifying and treating method includes: obtaining a first image, having first image elements, and a second image, having second image elements, respectively corresponding to a first state and a second state of a lung; extracting first feature points of the first image and second feature points of the second image; registering the first image with the second image using a boundary point set registration method and an inner tissue registration method according to the first feature points and the second feature points, so that the first image elements correspond to the second image elements and tissue units of the lung; determining functional index values representative of the tissue units of the lung using a ventilation function quantification method according to the first image elements and the second image elements corresponding to the first image elements; and treating the lung according to the functional index values.

Abstract: A directional coupler includes a main path, a coupling path, a first port, and a second port. The main path is used to propagate a first RF signal. The coupling path at least partially overlaps with the main path. The coupling path includes a first end, a second end, and at least one winding routed between the first end and the second end. The first port is coupled to the first end of the coupling path. The second port is coupled to the second end of the coupling path. At least one of the first port and the second port is located inside the at least one winding.

Abstract: A projection system, a projection device, and a control method thereof are provided. The control method of the projection device includes the following steps: transmitting a first original command by a terminal device; projecting an adjustment image by the projection device in response to the first original command corresponding to an image correction operation of the projection device, wherein the adjustment image includes at least one pattern array and at least one adjustment reference point; transmitting a second original command by the terminal device; and adjusting a position of the at least one adjustment reference point of the adjustment image by the projection device in response to the second original command corresponding to adjusting the position of the at least one adjustment reference point of the adjustment image, wherein the at least one adjustment reference point is located in the corresponding at least one pattern array.

Abstract: A moving device, applied in a nucleic acid extraction system and cooperated with a plurality of microtube components, the moving device includes: a workbench; a moving component, disposed on the workbench; a control element, disposed on the moving component and electrically connected to the moving component; a first motor, disposed on the moving component and electrically connected to the control element; a first rotating rod, connected to the first motor; a second motor, disposed on the moving component and electrically connected to the control element; a second rotating rod, connected to the second motor; and a telescopic component, disposed on the moving component corresponding to the first rotating rod and the second rotating rod, electrically connected to the control element, and movable between a first position and a second position.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. The gate structure is disposed over the semiconductor substrate. The strained layers are disposed aside the gate structure. The source/drain contact patterns are disposed on and electrically connected to the strained layers. Top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. The gate contact via is disposed on and electrically connected to the gate structure. The source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.

Abstract: A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.

Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.

Abstract: A method includes forming semiconductive sheets over a substrate and arranged in a vertical direction; forming source/drain regions on either side of each of the semiconductive sheets; forming first air gap inner spacers interleaving with the semiconductive sheets; forming a gate around each of the semiconductive sheets, wherein the first air gap inner spacers are laterally between the gate and a first one of the source/drain regions.

Abstract: A semiconductor chiplet device includes a first die, a second die, a decoupling circuit and an interposer. The interposer includes a plurality of power traces and a plurality of ground traces. The first die and the second die are arranged on a first side of the interposer according to a configuration direction, and are coupled to the power traces and the ground traces. The decoupling circuit is arranged on a second side of the interposer, and is coupled to the power traces and the ground traces. The power traces and the ground traces are staggered with each other, and an extending direction of the ground traces and the power traces is the same as the configuration direction.

Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

Abstract: A package includes a sensor die, and an encapsulating material encapsulating the sensor die therein. A top surface of the encapsulating material is substantially coplanar with or higher than a top surface of the sensor die. A plurality of sensing electrodes is higher than the sensor die and the encapsulating material. The plurality of sensing electrodes is arranged as a plurality of rows and columns, and the plurality of sensing electrodes is electrically coupled to the sensor die. A dielectric layer covers the plurality of sensing electrodes.

Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.

Abstract: An antenna assembly includes a patch antenna, a metal layer, and a feed-in signal layer. The metal layer is disposed on a side of the patch antenna and includes a first slot and a second slot. The feed-in signal layer is disposed on a side of the metal layer opposite the second antenna and includes a transmitting port, a receiving port, a hybrid coupler, and two microstrips. The transmitting port and the receiving port are connected to the hybrid coupler, and the two microstrips are extended in the direction away from the hybrid coupler. Projections of two ends of the two microstrips onto the metal layer are overlapped with the first slot and the second slot. An antenna array is also mentioned.

Abstract: A integrated circuit includes a first, a second, a third, and a fourth gate, a first input pin and a first conductor. The first and third gate are on a first level. The second and fourth gate are on a second level. The second gate is coupled to the first gate. The fourth gate is coupled to the third gate. The first input pin extends in a second direction, is on a first metal layer above a front-side of a substrate, is coupled to the first gate, and configured to receive a first input signal. The first input pin is electrically coupled to the third gate by the first, second or fourth gate. The first conductor extends in the first direction, is on a second metal layer below a back-side of the substrate, and is coupled to the second and fourth gate.

Abstract: An electronic package module and a method for fabrication of the same are provided. The method includes providing an electronic component assembly and a circuit substrate. The electronic component assembly includes two electronic components and a conductive structure. The electronic components are connected to each other through a conductive adhesive material, while the electronic components are connected to the conductive structure through another conductive adhesive material. A soldering material is formed on the circuit substrate, and the electronic component assembly is disposed on the soldering material. The melting points of the conductive adhesive materials are higher than the melting point of the soldering material. As a result, the conductive adhesive materials are prevented from failure during the soldering process, and thus the process yield is improved.

Abstract: A magnetic memory including a substrate, a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ) stack, a first protection layer, and a second protection layer is provided. The SOT layer is located over the substrate. The MTJ stack is located on the SOT layer. The first protection layer and the second protection layer are located on the sidewall of the MTJ stack. The first protection layer is located between the second protection layer and the MTJ stack. There is a notch between the second protection layer and the SOT layer.

Abstract: A device includes a transistor. The transistor includes a plurality of stacked channels, a source/drain region coupled to the stacked channels, and a gate metal wrapped around the stacked channels. The transistor includes a plurality of inner spacers, each inner spacer being positioned laterally between the gate metal and the source/drain region and including a gap and an inner spacer liner layer between the gate metal and the source/drain region.