Abstract: Methods, systems, and computer program products are described for generating synthesizable netlists from register transfer level (RTL) designs to aid with semiconductor device design. These netlists provide RTL design information corresponding to a portion of a semiconductor device. A configuration tracer generates behavior information associated with the RTL design. A register compiler compiles a set of semiconductor devices based on one or more technologies and power, performance, and area (PPA) information related to the semiconductor device. Semiconductor devices generated by the register compiler that meet predefined power, performance, and area conditions are identified. Structural information for aligning the input/output ports of the semiconductor device is generated.

Abstract: A semiconductor device with a deep trench isolation and a shallow trench isolation includes a substrate. The substrate is divided into a high voltage transistor region and a low voltage transistor region. A deep trench is disposed within the high voltage transistor region. The deep trench includes a first trench and a second trench. The first trench includes a first bottom. The second trench extends from the first bottom toward a bottom of the substrate. A first shallow trench and a second shallow trench are disposed within the low voltage transistor region. A length of the first shallow trench is the same as a length of the second trench. An insulating layer fills in the first trench, the second trench, the first shallow trench and the second shallow trench.

Abstract: A method and system for migrating an existing ASIC design from one semiconductor fabrication process to another are disclosed herein. In some embodiments, a method for migrating the existing ASIC design comprises parsing the gate-level netlist one row at a time into one or more standard cells forming the ASIC design, forming a plurality of mapping tables having mapping rules for mapping the parsed one or more standard cells into equivalent target standard cells implemented in the second semiconductor fabrication process, mapping the parsed one or more standard cells into the equivalent target standard cells using the plurality of mapping tables, and generating a target gate-level netlist describing the ASIC design in terms of the equivalent target standard cells.

Abstract: A package structure is provided, and includes a first bonding film formed on a first substrate, and a first alignment mark formed in the first bonding film. The first alignment mark includes a plurality of first patterns spaced apart from each other. The package structure includes a second bonding film formed on a second substrate and bonded to the first bonding film, and a second alignment mark formed in the second bonding film. The second alignment mark includes a plurality of second patterns spaced apart from each other. In a top view, the first alignment mark is spaced apart from the second alignment mark, and the distance between adjacent first patterns is less than the distance between the first alignment mark and the second alignment mark.

Abstract: The invention provides a semiconductor cleaning step, which comprises the following steps: providing a chamber with a bottom surface and a sidewall, the chamber contains a heater on the bottom surface, performing a first deposition step to leave a residual layer on the sidewall of the chamber, performing a carbon deposition step to form a carbon layer on at least the surface of the heater, and performing a plasma cleaning step to simultaneously remove the residual layer on the sidewall of the chamber and the carbon layer on the bottom surface.

Abstract: Semiconductor devices and methods of manufacturing are provided. In some embodiments the method includes depositing an etch stop layer over a first hard mask material, the first hard mask material over a gate stack, depositing an interlayer dielectric over the etch stop layer, forming a first opening through the interlayer dielectric, the etch stop layer, and the first hard mask material, the first opening exposing a conductive portion of the gate stack, and treating sidewalls of the first opening with a first dopant to form a first treated region within the interlayer dielectric, a second treated region within the etch stop layer, a third treated region within the first hard mask material, and a fourth treated region within the conductive portion, wherein after the treating the fourth treated region has a higher concentration of the first dopant than the first treated region.

Abstract: A method, computer system, and a computer program product are provided for responding to a language input query with ad hoc enriched term data. The technique comprises extracting information relating to the language input query using a Language Support Assistance Service. The extracted information includes one or more language terms requiring further support and an associated request type. This is identified from metadata relating to the language input query. Information is provided to a Term Related Corpus Data Service that includes one or more language terms requiring further support and the identified request type and any identified sources. The Term Related Corpus Data Service returns one or more ad hoc enriched terms that are tailored to the one or more language terms requiring further support and is according to the associated request type. The Language Support Assistance Service provides a response to the language input query.

Abstract: An electronic device including a first body, a second body, a pivoting shaft, a driving module, and a light source is provided. The first body includes a first casing and a second casing movably disposed on the first casing. The second body has a pivoting part and a light reflecting part located at the pivoting part. The pivoting shaft is connected to the pivoting part. The second body is pivoted to the first body through the pivoting shaft. The pivoting shaft, the driving module, and the light source are disposed in the first body. The driving module is connected to the pivoting shaft and contacts the second casing. When the second body rotates relative to the first body, the pivoting shaft drives the driving module to push the second casing to lift to form a light emitting slit between the second casing and the pivoting part.

Abstract: A barrier layer is formed in a portion of a thickness of sidewalls in a recess prior to formation of an interconnect structure in the recess. The barrier layer is formed in the portion of the thickness of the sidewalls by a plasma-based deposition operation, in which a precursor reacts with a silicon-rich surface to form the barrier layer. The barrier layer is formed in the portion of the thickness of the sidewalls in that the precursor consumes a portion of the silicon-rich surface of the sidewalls as a result of the plasma treatment. This enables the barrier layer to be formed in a manner in which the cross-sectional width reduction in the recess from the barrier layer is minimized while enabling the barrier layer to be used to promote adhesion in the recess.

Abstract: A semiconductor device includes a substrate with a high voltage region and a low voltage region. A first deep trench isolation is disposed within the high voltage region. The first deep trench isolation includes a first deep trench and a first insulating layer filling the first deep trench. The first deep trench includes a first sidewall and a second sidewall facing the first sidewall. The first sidewall is formed by a first plane and a second plane. The edge of the first plane connects to the edge of the second plane. The slope of the first plane is different from the slope of the second plane.

Abstract: An electronic device, including a metal back cover, a ground radiator, a third radiator, and a metal frame including a first cutting opening, a second cutting opening, a first radiator located between the first cutting opening and the second cutting opening, and a second radiator located beside the second cutting opening and separated from the first radiator by the second cutting opening, is provided. An end of a first slot formed between the metal back cover and a first part of the first radiator is communicated with the first cutting opening, and a second slot formed between the metal back cover and a second part of the first radiator and between the metal back cover and the second radiator is communicated with the second cutting opening. The ground radiator connects the metal back cover and the first radiator and separates the first slot from the second slot.

Abstract: A package structure is provided. The package structure includes a die, an encapsulant, a first redistribution line (RDL) structure, a second RDL structure, and a through via. The encapsulant laterally encapsulates the die. The first redistribution line (RDL) structure on a first side of the die and the encapsulant, wherein the first RDL structure comprises a dielectric layer and a redistribution layer in the dielectric layer. The second RDL structure is located on a second side of the die and the encapsulant. The through via extends through the encapsulant and the first redistribution line structure and connecting the second RDL structure. The through via is laterally separated from the redistribution layer by the dielectric layer therebetween.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The magnetic element has multiple sub-layers, and each sub-layer is wider than another sub-layer above it. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element, and the isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.

Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

Abstract: An electronic card receiving device, including a housing, a card stand, a rotating shaft, and a contact element, is provided. The housing includes a front plate having an opening. The card stand is disposed in an inner space of the housing and includes a plate section, a connecting section, and a hook section. The connecting section is connected between the plate section and the hook section. A terminal of the hook section protrudes toward the opening. The rotating shaft is attached to the plate section and is lower than the opening. An axis of the rotating shaft is substantially parallel to the front plate. The rotating shaft rotates to drive the card stand to oscillate between an initial configuration and a card-reading configuration. The contact element is disposed on the plate section of the card stand. A method of using an electronic card receiving device is also provided.

Abstract: An artificial leather and a method for manufacturing the artificial leather are provided. The artificial leather includes a fabric layer, a thermoplastic polyolefin layer, a modified thermoplastic polyolefin layer, and a polyurethane surface layer. The thermoplastic polyolefin layer is disposed on the fabric layer. The modified thermoplastic polyolefin layer is disposed on the thermoplastic polyolefin layer. The polyurethane surface layer is attached to the modified thermoplastic polyolefin layer through an adhesive.

Abstract: An amplifier circuit includes an input terminal used to receive an input signal, an output terminal used to output an output signal, an amplification unit, and a phase adjustment unit. The amplification unit includes an input terminal coupled to the input terminal of the amplifier circuit, an output terminal coupled to the output terminal of the amplifier circuit, a first terminal coupled to a first voltage terminal, and a second terminal coupled to a second voltage terminal. The phase adjustment unit is coupled to the amplification unit. When the amplifier circuit is operated in a first mode, the output signal has a first phase, and when the amplifier circuit is operated in a second mode, the output signal has a second phase. A difference between the first phase and the second phase is within a predetermined range.

Abstract: Optical devices and methods of manufacture are presented in which a first mask is utilized for multiple purposes. Some methods include depositing a first mask over a support material, forming a concave surface in the support material through the first mask, and bonding the first mask to a first bonding layer over an optical interposer.

Abstract: Embodiments of the present disclosure relate to a method, system, and computer program product for translation of rich text. In some embodiments, a method is disclosed. According to the method, one or more candidate formats are determined for source rich text. A target format for the source rich text is selected from the one or more candidate formats based on one or more corresponding images obtained from rendering the source rich text in the one or more candidate formats. Based on the target format, a translation editing environment is provided for editing a translation of the source rich text. In other embodiments, a system and a computer program product are disclosed.

Abstract: A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.