Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Abstract: A driving environment monitoring system includes a line-of-sight analysis module, an environment analysis module and a processor. The line-of-sight analysis module captures an eye image of a driver; and analyzes the eye image to obtain a plurality of line-of-sight probabilities that a line-of-sight of the eye image is located in a plurality of partitions. The environment analysis module is configured to capture an environment image around the mobile vehicle; and analyze the environment image to obtain a plurality of object probabilities that at least one object of the environment image is located in the partitions. The processor is configured to obtain an integration probability of the line-of-sight probability and the object probability in each partition; obtain a forward direction of the mobile vehicle; and send a reminder signal based on the integration probability of the partition where the forward direction is located being greater than a preset probability.

Abstract: A temperature detection device includes plural thermistors, a voltage source and plural temperature detection circuits. The first terminals of the thermistors are electrically connected with a common node. The voltage source is electrically connected with the common node directly. Each temperature detection circuit includes a voltage divider and a differential amplifier circuit. The voltage divider includes a first resistor and a second resistor. A first terminal of the first resistor is connected with the common node. A second terminal of the first resistor is connected with a first terminal of the second resistor and the second terminal of the corresponding thermistor. The second terminal of the second resistor is electrically connected with a ground terminal. The differential amplifier circuit includes a first input terminal connected with the first terminal of the first resistor, a second input terminal connected with the second terminal of the first resistor, and an output terminal.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Abstract: A semiconductor substrate includes a high-resistivity silicon carbide layer and a gallium nitride epitaxial layer. The gallium nitride epitaxial layer is formed on a surface, a thickness of the gallium nitride epitaxial layer is less than 2 ?m, and a full width at half maximum (FWHM) of an X-ray diffraction analysis (002) plane is less than 100 arcsec. The thickness of the high-resistivity silicon carbide layer ranges from 20 ?m to 50 ?m. The surface of the high-resistivity silicon carbide layer has an angle ranging from 0° to +/?8° with respect to a (0001) plane. The micropipe density (MPD) of the high-resistivity silicon carbide layer is less than 0.5 ea/cm2, the basal plane dislocation (BPD) of the high-resistivity silicon carbide layer is less than 10 ea/cm2, and the threading screw dislocation (TSD) of the high-resistivity silicon carbide layer is less than 500 ea/cm2.

Abstract: A wafer carrier with a bottom for connecting to a shaft includes a disc body and at least one heat insulator. The disc body has an accommodating groove for accommodating a wafer, and the disc body has a first surface and a second surface opposing each other. A groove bottom of the accommodating groove has the first surface. The at least one heat insulator is disposed on either the first surface or the second surface. When the wafer is accommodated in the accommodating groove, the at least one heat insulator is positioned between the wafer and the shaft.

Abstract: An operating method of an interactive service platform including the steps of: communicating with a plurality of user end devices via an application software; receiving physiological measurement information of user from the user end devices via the application software; analyzing the physiological measurement information to identify a physical and mental state/lifestyle of an associated subscriber; and automatically responding content information associated with at least one associated subscriber according to requests from the user end devices.

Abstract: A portable electronic device and an image-capturing module thereof are provided. The image-capturing module includes a circuit substrate, an image sensing chip, a rigidity reinforcing structure, and a lens assembly. The circuit substrate has a plurality of conductive substrate contacts. The image sensing chip is disposed on the circuit substrate and electrically connected to the circuit substrate. The image sensing chip includes an image sensing region, and a plurality of conductive chip contacts respectively and electrically connected to the conductive substrate contacts. The rigidity reinforcing structure is disposed on the circuit substrate. The lens assembly includes a lens holder and a lens structure disposed on the lens holder, and the lens structure corresponds to the image sensing region. A perpendicular projection of each of the conductive substrate contacts and a perpendicular projection of each of the conductive chip contacts can be shown on the rigidity reinforcing structure.

Abstract: A method for marking defects of products implemented in an electronic device is provided. The method includes obtaining at least one detection image of a product to be marked; recognizing a position and a type of at least one defect on the product according to the at least one detection image; transmit the position and the type of the at least one apparent defect to a robot arm; controlling the robot arm to mark the at least one defect on an adhesive film according to the position and the type of the at least one defect; and controlling a film coating unit to apply the adhesive film which is marked to the product.

Abstract: An epitaxial structure includes a substrate, a first buffer layer, a second buffer layer, and a channel layer, wherein the first buffer layer is located on a top of the substrate and includes a first portion. The first portion includes a nitride, which is ternary and above, and an aluminum atom concentration of the first portion is less than or equal to 25 at %. The first portion has an element doping, wherein a doping concentration of the element doping of the first portion is greater than or equal to 1×1018 cm?3. The second buffer layer is located on a top of the first buffer layer. The second buffer layer is provided without aluminum and has an element doping. The channel layer is located on a top of the second buffer layer.

Abstract: A semiconductor substrate includes a high-resistivity silicon carbide layer and a gallium nitride epitaxial layer. The gallium nitride epitaxial layer is formed on a surface, a thickness of the gallium nitride epitaxial layer is less than 2 ?m, and a full width at half maximum (FWHM) of an X-ray diffraction analysis (002) plane is less than 100 arcsec. The thickness of the high-resistivity silicon carbide layer ranges from 20 ?m to 50 ?m. The surface of the high-resistivity silicon carbide layer has an angle ranging from 0° to +/?8° with respect to a (0001) plane. The micropipe density (MPD) of the high-resistivity silicon carbide layer is less than 0.5 ea/cm2, the basal plane dislocation (BPD) of the high-resistivity silicon carbide layer is less than 10 ea/cm2, and the threading screw dislocation (TSD) of the high-resistivity silicon carbide layer is less than 500 ea/cm2.

Abstract: A physiological detection device includes system including a first array PPG detector, a second array PPG detector, a display and a processing unit. The first array PPG detector is configured to generate a plurality of first PPG signals. The second array PPG detector is configured to generate a plurality of second PPG signals. The display is configured to show a detected result of the physiological detection system. The processing unit is configured to convert the plurality of first PPG signals and the plurality of second PPG signals to a first 3D energy distribution and a second 3D energy distribution, respectively, and control the display to show an alert message.

Abstract: A method of manufacturing a light-emitting element, including: provide a substrate; form a nucleation layer above the substrate; form a buffer layer above the nucleation layer; form a first nitride layer being in contact with the buffer layer above the buffer layer; form a second nitride layer being in contact with the first nitride layer above the first nitride layer; form a first semiconductor layer above the second nitride layer; form a light-emitting layer above the first semiconductor layer; form a second semiconductor layer above the light-emitting layer. The light-emitting layer is adapted to emit light when electrons and holes recombine. A film thickness of the first nitride layer is smaller than a film thickness of the second nitride layer, and a growth pressure of the first nitride layer is smaller than a growth pressure of the second nitride layer.

Abstract: A semiconductor substrate and a method of manufacturing the same are provided. The method includes epitaxially growing a buffer layer and a silicon carbide layer on a silicon surface of an N-type silicon carbide substrate, and the silicon carbide layer is high-resistivity silicon carbide or N-type silicon carbide (N—SiC). Next, a gallium nitride epitaxial layer is epitaxially grown on the silicon carbide layer to obtain a semiconductor structure composed of the buffer layer, the silicon carbide layer, and the gallium nitride epitaxial layer. After the epitaxial growth of the gallium nitride epitaxial layer, a laser is used to form a damaged layer in the semiconductor structure, and a chip carrier is bonded to the surface of the gallium nitride epitaxial layer, and then the N-type silicon carbide and the semiconductor structure are separated at the location of the damaged layer.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and 0?y?1; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers. The aluminum content varies continuously throughout a thickness of at least one of the layers.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Abstract: A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 ?m and less than 200 ?m. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 ?m and 800 ?m.

Abstract: A portable electronic device and a customized image-capturing module thereof are provided. The customized image-capturing module includes a carrier substrate, an image-capturing chip, and a lens assembly. The carrier substrate includes a carrier body, a plurality of first conductive pads, and a plurality of second conductive pads. The image-capturing chip is disposed inside a concave space of the carrier body, and the image-capturing chip includes a plurality of conductive chip pads. The second conductive pads are exposed from a bottom side of the carrier body, the conductive chip pads are electrically connected to the second conductive pads through the first conductive pads, respectively, so that when the customized image-capturing module is partially disposed inside a receiving space and positioned between two electronic elements, the second conductive pads can be electrically connected to conductive substrate pads of a circuit substrate through soldering materials, respectively.

Abstract: A portable electronic device and an image-capturing module thereof are provided. The image-capturing module includes a circuit substrate, an image sensing chip, a rigidity reinforcing structure, and a lens assembly. The circuit substrate has a plurality of conductive substrate contacts. The image sensing chip is disposed on the circuit substrate and electrically connected to the circuit substrate. The image sensing chip includes an image sensing region, and a plurality of conductive chip contacts respectively and electrically connected to the conductive substrate contacts. The rigidity reinforcing structure is disposed on the circuit substrate. The lens assembly includes a lens holder and a lens structure disposed on the lens holder, and the lens structure corresponds to the image sensing region. A perpendicular projection of each of the conductive substrate contacts and a perpendicular projection of each of the conductive chip contacts can be shown on the rigidity reinforcing structure.