Patents by Inventor Chih-Yuan Ting
Chih-Yuan Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210202306Abstract: One or more techniques or systems for mitigating pattern collapse are provided herein. For example, a semiconductor structure for mitigating pattern collapse is formed. In some embodiments, the semiconductor structure includes an extreme low-k (ELK) dielectric region associated with a via or a metal line. For example, a first metal line portion and a second metal line portion are associated with a first lateral location and a second lateral location, respectively. In some embodiments, the first portion is formed based on a first stage of patterning and the second portion is formed based on a second stage of patterning. In this manner, pattern collapse associated with the semiconductor structure is mitigated, for example.Type: ApplicationFiled: March 15, 2021Publication date: July 1, 2021Inventors: Chih-Yuan Ting, Ya-Lien Lee, Chung-Wen Wu, Jeng-Shiou Chen
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Patent number: 11043453Abstract: Methods are disclosed herein for forming conductive patterns having small pitches. An exemplary method includes forming a metal line in a first dielectric layer. The metal line has a first dimension along a first direction and a second dimension along a second direction that is different than the first direction. The method includes forming a patterned mask layer having an opening that exposes a portion of the metal line along an entirety of the second dimension and etching the portion of the metal line exposed by the opening of the patterned mask layer until reaching the first dielectric layer. The metal line is thus separated into a first metal feature and a second metal feature. After removing the patterned mask layer, a barrier layer is deposited over exposed surfaces of the first metal feature and the second metal feature and a second dielectric layer is deposited over the barrier layer.Type: GrantFiled: December 18, 2019Date of Patent: June 22, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Yuan Ting, Chung-Wen Wu, Jeng-Shiou Chen, Jang-Shiang Tsai, Jyu-Horng Shieh
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Patent number: 11037981Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.Type: GrantFiled: September 4, 2019Date of Patent: June 15, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tai-Yen Peng, Tsung-Hsien Chang, Yu-Shu Chen, Chih-Yuan Ting, Jyu-Horng Shieh, Chung-Te Lin
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Patent number: 11024515Abstract: Methods of patterning a target material layer are provided herein. The method includes steps of positioning a semiconductor wafer having the target material layer thereon in an etch chamber and of providing a flow of etch gases into the etch chamber, the flow of etch gases etchant gas comprising a plurality of gases. The semiconductor wafer has a patterned hardmask feature formed from a compound on the target material layer. The method also includes steps of etching the target material layer using the patterned hardmask feature as a mask feature, wherein one of the gases chemically alters the patterned hardmask feature and at least one of the gases chemically repairs the patterned hardmask feature so that the patterned hardmask feature retains its dimensions during the etching. Associated semiconductor wafer are also provided herein.Type: GrantFiled: December 13, 2018Date of Patent: June 1, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Yuan Ting, Chung-Wen Wu
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Patent number: 10985054Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower etch stop layer (ESL); an upper low-k (LK) dielectric layer over the lower ESL; a first conductive feature in the upper LK dielectric layer, wherein the first conductive feature has a first metal line and a dummy via contiguous with the first metal line, the dummy via extending through the lower ESL; a first gap along an interface of the first conductive feature and the upper LK dielectric layer; and an upper ESL over the upper LK dielectric layer, the first conductive feature, and the first gap.Type: GrantFiled: July 13, 2020Date of Patent: April 20, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jeng-Shiou Chen, Chih-Yuan Ting, Jyu-Horng Shieh, Minghsing Tsai
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Patent number: 10950495Abstract: One or more techniques or systems for mitigating pattern collapse are provided herein. For example, a semiconductor structure for mitigating pattern collapse is formed. In some embodiments, the semiconductor structure includes an extreme low-k (ELK) dielectric region associated with a via or a metal line. For example, a first metal line portion and a second metal line portion are associated with a first lateral location and a second lateral location, respectively. In some embodiments, the first portion is formed based on a first stage of patterning and the second portion is formed based on a second stage of patterning. In this manner, pattern collapse associated with the semiconductor structure is mitigated, for example.Type: GrantFiled: August 3, 2018Date of Patent: March 16, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Chih-Yuan Ting, Ya-Lien Lee, Chung-Wen Wu, Jeng-Shiou Chen
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Publication number: 20210074636Abstract: The present disclosure is directed to a semiconductor structure that includes a semiconductor substrate. A first interconnect layer is disposed over the semiconductor substrate. The first interconnect layer includes a first dielectric material having a conductive body embedded therein. The conductive body includes a first sidewall, a second sidewall, and a bottom surface. A spacer element has a sidewall which contacts the first sidewall of the conductive body and which contacts the bottom surface of the conductive body. A second interconnect layer overlies the first interconnect layer and includes a second dielectric material with at least one via therein. The at least one via is filled with a conductive material which is electrically coupled to the conductive body of the first interconnect layer.Type: ApplicationFiled: November 19, 2020Publication date: March 11, 2021Inventors: Chih-Yuan Ting, Chung-Wen Wu
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Patent number: 10923423Abstract: An interconnect and a method of forming an interconnect for a semiconductor device is provided. Conductive lines having different widths are formed. Wider conductive lines are used where the design includes an overlying via, and narrower lines are used in which an overlying via is not included. An overlying dielectric layer is formed and trenches and vias are formed extending through the overlying dielectric layer to the wider conductive lines. Voids or air gaps may be formed adjacent select conductive lines, such as the narrower lines.Type: GrantFiled: October 11, 2019Date of Patent: February 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Chih-Yuan Ting
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Patent number: 10861788Abstract: The present disclosure is directed to a semiconductor structure that includes a semiconductor substrate. A first interconnect layer is disposed over the semiconductor substrate. The first interconnect layer includes a first dielectric material having a conductive body embedded therein. The conductive body includes a first sidewall, a second sidewall, and a bottom surface. A spacer element has a sidewall which contacts the first sidewall of the conductive body and which contacts the bottom surface of the conductive body. A second interconnect layer overlies the first interconnect layer and includes a second dielectric material with at least one via therein. The at least one via is filled with a conductive material which is electrically coupled to the conductive body of the first interconnect layer.Type: GrantFiled: December 21, 2018Date of Patent: December 8, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Yuan Ting, Chung-Wen Wu
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Publication number: 20200343128Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower etch stop layer (ESL); an upper low-k (LK) dielectric layer over the lower ESL; a first conductive feature in the upper LK dielectric layer, wherein the first conductive feature has a first metal line and a dummy via contiguous with the first metal line, the dummy via extending through the lower ESL; a first gap along an interface of the first conductive feature and the upper LK dielectric layer; and an upper ESL over the upper LK dielectric layer, the first conductive feature, and the first gap.Type: ApplicationFiled: July 13, 2020Publication date: October 29, 2020Inventors: Jeng-Shiou Chen, Chih-Yuan Ting, Jyu-Horng Shieh, Minghsing Tsai
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Publication number: 20200286779Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower etch stop layer (ESL); a middle low-k (LK) dielectric layer over the lower ESL; a supporting layer over the middle LK dielectric layer; an upper LK dielectric layer over the supporting layer; an upper conductive feature in the upper LK dielectric layer, wherein the upper conductive feature is through the supporting layer; a gap along an interface of the upper conductive feature and the upper LK dielectric layer; and an upper ESL over the upper LK dielectric layer, the upper conductive feature, and the gap.Type: ApplicationFiled: May 26, 2020Publication date: September 10, 2020Inventors: Jeng-Shiou Chen, Chih-Yuan Ting
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Patent number: 10770345Abstract: A method for fabricating an integrated circuit is provided. The method includes depositing a first polish stop layer above a memory device, in which the first polish stop layer has a first portion over the memory device and a second portion that is not over the memory device; removing the second portion of the first polish stop layer; depositing an inter-layer dielectric layer over the first polish stop layer after removing the second portion of the first polish stop layer; and polishing the inter-layer dielectric layer until reaching the first portion of the first polish stop layer.Type: GrantFiled: August 27, 2018Date of Patent: September 8, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen Peng, Chang-Sheng Lin, Chien-Chung Huang, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Chih-Yuan Ting, Jyu-Horng Shieh
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Publication number: 20200279743Abstract: A method for semiconductor manufacturing includes providing a substrate, forming a patterning layer over the substrate, and patterning the patterning layer to form a hole in the patterning layer. The method also includes applying a first directional etching to two inner sidewalls of the hole to expand the hole along a first direction and applying a second directional etching to another two inner sidewalls of the hole to expand the hole along a second direction that is different from the first direction.Type: ApplicationFiled: May 19, 2020Publication date: September 3, 2020Inventors: Yu-Tien Shen, Chi-Cheng Hung, Chin-Hsiang Lin, Chien-Wei Wang, Ching-Yu Chang, Chih-Yuan Ting, Kuei-Shun Chen, Ru-Gun Liu, Wei-Liang Lin, Ya Hui Chang, Yuan-Hsiang Lung, Yen-Ming Chen, Yung-Sung Yen
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Patent number: 10755974Abstract: A method of forming a semiconductor device is provided. Metallic interconnects are formed in a dielectric layer of the semiconductor device. A hard mask is used to avoid usual problems faced by manufacturers, such as possibility of bridging different conductive elements and via patterning problems when there are overlays between vias and trenches. The hard mask is etched multiple times to extend via landing windows, while keeping distance between the conductive elements to avoid the bridging problem.Type: GrantFiled: April 22, 2019Date of Patent: August 25, 2020Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Ming-Hui Chu, Chih-Yuan Ting, Jyu-Horng Shieh
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Publication number: 20200266340Abstract: An integrated circuit is provided. The integrated circuit includes a metallization pattern, a dielectric layer, and plural memory devices. The metallization pattern has plural first conductive features and a second conductive feature. The dielectric layer is over the metallization pattern, in which the dielectric layer has a first portion over the first conductive features and a second portion over the second conductive feature. The memory devices are at least partially in the first portion of the dielectric layer and respectively connected with the first conductive features. The first portion of the dielectric layer has a plurality of side parts respectively surrounding the memory devices and an extending part connecting the side parts to each other, and a thickness of the second portion is greater than a thickness of the extending part of the first portion of the dielectric layer.Type: ApplicationFiled: May 4, 2020Publication date: August 20, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen PENG, Chien-Chung HUANG, Yu-Shu CHEN, Sin-Yi YANG, Chen-Jung WANG, Han-Ting LIN, Chih-Yuan TING, Jyu-Horng SHIEH, Hui-Hsien WEI
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Patent number: 10714383Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower etch stop layer (ESL); an upper low-k (LK) dielectric layer over the lower ESL; a first conductive feature in the upper LK dielectric layer, wherein the first conductive feature has a first metal line and a dummy via contiguous with the first metal line, the dummy via extending through the lower ESL; a first gap along an interface of the first conductive feature and the upper LK dielectric layer; and an upper ESL over the upper LK dielectric layer, the first conductive feature, and the first gap.Type: GrantFiled: May 13, 2019Date of Patent: July 14, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jeng-Shiou Chen, Chih-Yuan Ting, Jyu-Horng Shieh, Minghsing Tsai
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Patent number: 10679895Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower etch stop layer (ESL); a middle low-k (LK) dielectric layer over the lower ESL; a supporting layer over the middle LK dielectric layer; an upper LK dielectric layer over the supporting layer; an upper conductive feature in the upper LK dielectric layer, wherein the upper conductive feature is through the supporting layer; a gap along an interface of the upper conductive feature and the upper LK dielectric layer; and an upper ESL over the upper LK dielectric layer, the upper conductive feature, and the gap.Type: GrantFiled: October 29, 2018Date of Patent: June 9, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jeng-Shiou Chen, Chih-Yuan Ting
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Patent number: 10658184Abstract: A method for semiconductor manufacturing includes providing a substrate and a patterning layer over the substrate; forming a hole in the patterning layer; applying a first directional etching along a first direction to inner sidewalls of the hole; and applying a second directional etching along a second direction to the inner sidewalls of the hole, wherein the second direction is different from the first direction.Type: GrantFiled: March 30, 2017Date of Patent: May 19, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Tien Shen, Chi-Cheng Hung, Chin-Hsiang Lin, Chien-Wei Wang, Ching-Yu Chang, Chih-Yuan Ting, Kuei-Shun Chen, Ru-Gun Liu, Wei-Liang Lin, Ya Hui Chang, Yuan-Hsiang Lung, Yen-Ming Chen, Yung-Sung Yen
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Publication number: 20200152507Abstract: A semiconductor device is disclosed, including a plurality of conductive features disposed over a substrate. A dielectric layer separates the conductive features. A conductive line is provided, connecting a subset of the conductive features. The conductive line includes a line-like portion and a line-end portion.Type: ApplicationFiled: January 13, 2020Publication date: May 14, 2020Inventor: Chih-Yuan Ting
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Patent number: 10651373Abstract: A method for forming an integrated circuit is provided. The method includes forming a dielectric layer over a cell region and a logic region of a substrate; forming a resistance switching layer over the dielectric layer; performing at least one etch process to pattern the resistance switching layer into a plurality of resistance switching elements in the cell region, in which a first portion of the dielectric layer in the logic region is less etched by the etch process than a second portion of the dielectric layer in the cell region.Type: GrantFiled: November 16, 2018Date of Patent: May 12, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen Peng, Chien-Chung Huang, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Chih-Yuan Ting, Jyu-Horng Shieh, Hui-Hsien Wei