Abstract: The integrated automated cell culture device includes a main body, a cover, a connection seat, a gas module, a temperature module, at least one slide track, and a clamping member. The main body encloses a culture room for receiving a culture bag. The cover is disposed on the opening of the culture room. The connection seat is received in a receiving slot of the main body and is adapted for a pipe to penetrate. The gas module detects the carbon dioxide's concentration and selectively injects gas into the culture room. The temperature module detects the temperature in the culture room and selectively heats the culture room. The slide track is disposed on the bottom of the culture room. The clamping member is slidably disposed on the slide track and clamps the culture bag to make the fluid in the culture bag move to one side of the culture bag.

Abstract: A delay measurement system and a measurement method are provided. The delay measurement system includes a delay control device and a comparator. The delay control device is configured to generate a second signal in response to a first signal, wherein a rising edge of the second signal delays a first delay time with respect to a rising edge of the first signal, and the first delay time is controlled in response to an output signal of a comparator. The comparator is configured to compare the first delay time with a second delay time and output the output signal, wherein a rising edge of a third signal delays the second delay time with respect to the rising edge of the first signal, and the third signal is generated by a device under test (DUT) in response to the first signal.

Abstract: The present disclosure provides a system of measuring capacitance of a device-under-test (DUT). The system includes first switch, second switch, and a capacitance measurement device. The first switch is configured to receive a supply voltage. The first and second switches are electrically connected to the DUT. The capacitance measurement device is configured to provide a first pair of non-overlapping periodic signals with a first frequency, and a second pair of non-overlapping periodic signals with a second frequency. The second frequency is ? times the first frequency. When the first switch and the second switch receive the first pair of non-overlapping periodic signals, a first current is transmitted through the first switch and the second switch. When the first switch and the second switch receive the second pair of non-overlapping periodic signals, a second current is transmitted through the first switch and the second switch.

Abstract: An electronic package in which at least one magnetically permeable member is disposed between a carrier and an electronic component, where the electronic component has a first conductive layer, and the carrier has a second conductive layer, such that the magnetically permeable element is located between the first conductive layer and the second conductive layer. Moreover, a plurality of conductive bumps that electrically connect the first conductive layer and the second conductive layer are arranged between the electronic component and the carrier to surround the magnetically permeable member for generating magnetic flux.

Abstract: An electrical system is provided. The electrical system comprises a first phase lock circuit embedded within a first chip for receiving a first periodic signal having a first frequency. The electrical system comprises a first buffering circuit embedded within the first chip for receiving a second periodic signal having the first frequency, wherein the first buffering circuit is configured to provide a third periodic signal having the first frequency to an output terminal of the first chip.

Abstract: A manufacturing control method is applied to a computer system comprising a processor, a storage device, and a display device. The manufacturing control method includes: dividing a plurality of outlier-filtered data into a plurality of data subgroups based on a group division reference value; calculating a plurality of standard deviations for each of these data subgroups; calculating a warning line upper limit and a warning line lower limit based on the group division reference value, a predetermined multiple, and the standard deviations; adjusting either the warning line upper limit or the warning line lower limit based on the predetermined multiple and the standard deviations; and when a sensing data exceeds the warning line upper limit or the warning line lower limit, the computing system triggers a warning signal.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a source/drain epitaxial feature disposed over a substrate, and the source/drain epitaxial feature includes about 0.002 atomic percent to about 0.02 atomic percent of aluminum. The structure further includes a first semiconductor layer in contact with the source/drain epitaxial feature and a gate electrode layer disposed over the first semiconductor layer.

Abstract: An electronic package and a manufacturing method thereof are provided, in which an electronic component and a heat dissipation structure having an opening are arranged on a carrier structure, a heat sink is arranged in the opening and bonded to the electronic component, and the electronic component, the heat dissipation structure and the heat sink are covered with an encapsulation layer, such that the heat sink can be arranged according to a heat source of a specific part of the electronic component so as to effectively dissipate heat.

Abstract: A semiconductor die includes a substrate, a semiconductor device, a back-end-of-line (BEOL) structure, and a heat dissipation structure. The substrate includes a device region and a non-device region. The BEOL structure includes a plurality of metallization layers. Each of the metallization layers includes a dielectric layer, interconnect features, and metal patterns. The interconnect features is in the dielectric layer and over the device region of the substrate, in which the interconnect features are electrically connected with the semiconductor device. The metal patterns are in the dielectric layer and over the non-device region of the substrate, in which the metal patterns are electrically isolated from the semiconductor device. The heat dissipation structure is over the non-device region of the substrate and extending through at least two of the metallization layers, in which the heat dissipation structure is in contact with the metal patterns of one of the metallization layers.

Abstract: Provided is an electronic package, in which a conductive structure and an encapsulation layer covering the conductive structure are arranged on one side of a carrier structure having a circuit layer, and an electronic component is arranged on the other side of the carrier structure. The rigidity of the carrier structure is increased by the encapsulation layer, and problems such as warpage or wavy deformations caused by increasing the volume of the electronic package due to functional requirements can be eliminated.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: An electronic package and a manufacturing method thereof are provided, in which an electronic element is disposed on a carrier structure, then a cladding layer is formed to cover the electronic element, and a shielding layer is formed on the cladding layer to cover the electronic element. The cladding layer is bonded to a shielding structure, and the shielding structure is located between the shielding layer and the electronic element, so as to prevent the electronic element from being subjected to external electromagnetic interference via multiple shielding mechanisms of the shielding structure and the shielding layer.

Abstract: A method includes forming a shallow trench isolation (STI) region in a semiconductor substrate thereby defining an active region and a passive region in the semiconductor substrate and spaced apart from each other by the STI region, forming a first sacrificial gate structure over the active region and a second sacrificial gate structure over the passive region, forming first source/drain regions in the active region and second source/drain regions in the passive region, after forming the first and second source/drain regions, replacing the first sacrificial gate structure with a metal gate structure and the second sacrificial gate structure with a metal resistor structure, the metal resistor structure corresponding to a dummy gate, forming a first gate contact over the metal gate structure, and a pair of resistor contacts over the metal resistor structure, and electrically coupling a set of metal lines with the metal resistor structure by the pair of resistor contacts.

Abstract: A device includes a phase detector circuit, a charge pump circuit, a sample and hold circuit, a comparator, and a controller. The phase detector circuit detects a clock skew between a reference signal and an input signal. The charge pump circuit translates the clock skew into a voltage. A sample and hold circuit samples the voltage, at a first time, and maintain the sampled voltage until a second time. The comparator (i) detects a loop gain associated with the input signal based on the sampled voltage and the voltage at the second time and (ii) outputs a loop gain signal for adjustment of the input signal. The controller is coupled to the phase detector, the comparator, and the sample and hold circuit. The controller generates a plurality of control signals for automatically controlling operation of the phase detector, the comparator, and the sample and hold circuit.

Abstract: Systems, methods, and circuits for determining a duty cycle of a periodic input signal are provided. A delay element is configured to delay the periodic input signal based on a digital control word. A digital circuit is configured to generate a first digital control word used to delay the periodic input signal a first amount of time corresponding to a period of the periodic input signal, generate a second digital control word used to delay the periodic input signal a second amount of time corresponding to a portion of the periodic input signal having a logic-level high value, and generate a third digital control word used to delay the periodic input signal a third amount of time corresponding to a portion of the periodic input signal having a logic-level low value. A controller is configured to determine the duty cycle based on the first, second, and third digital control words.

Abstract: Digital delay lock circuits and methods for operating digital delay lock circuits are provided. A phase detector is configured to receive first and second clock signals and generate a digital signal indicating a relationship between a phase of the first clock signal and a phase of the second clock signal. A phase accumulator circuit is configured to receive the digital signal and generate a phase signal based on values of the digital signal over multiple clock cycles. A decoder is configured to receive the phase signal and generate a digital control word based on the phase signal. A delay element is configured to receive the digital control word. The delay element is further configured to change the relationship between the phase of the first clock signal and the phase of the second clock signal by modifying the phase of the second clock signal according to the digital control word.

Abstract: A circuit is disclosed. The circuit includes a time-to-digital converter (TDC), and an evaluation circuit coupled to the TDC and a phase-locked loop (PLL) external to the circuit.

Abstract: Systems, methods, and circuits for determining a duty cycle of a periodic input signal are provided. A delay element is configured to delay the periodic input signal based on a digital control word. A digital circuit is configured to generate a first digital control word used to delay the periodic input signal a first amount of time corresponding to a period of the periodic input signal, generate a second digital control word used to delay the periodic input signal a second amount of time corresponding to a portion of the periodic input signal having a logic-level high value, and generate a third digital control word used to delay the periodic input signal a third amount of time corresponding to a portion of the periodic input signal having a logic-level low value. A controller is configured to determine the duty cycle based on the first, second, and third digital control words.

Abstract: Digital delay lock circuits and methods for operating digital delay lock circuits are provided. A phase detector is configured to receive first and second clock signals and generate a digital signal indicating a relationship between a phase of the first clock signal and a phase of the second clock signal. A phase accumulator circuit is configured to receive the digital signal and generate a phase signal based on values of the digital signal over multiple clock cycles. A decoder is configured to receive the phase signal and generate a digital control word based on the phase signal. A delay element is configured to receive the digital control word. The delay element is further configured to change the relationship between the phase of the first clock signal and the phase of the second clock signal by modifying the phase of the second clock signal according to the digital control word.

Abstract: A sense amplifier includes a first pair of transistors having gate terminals respectively coupled to a first input terminal for receiving a first input signal and to a second input terminal for receiving a second input signal, source terminals coupled to a first power supply terminal, and drain terminals. The sense amplifier also includes a second pair of transistors having gate terminals coupled to a clock terminal, source terminals respectively coupled to the drain terminals of the first pair of transistors, and drain terminals. The sense amplifier also includes a third pair of transistors having gate terminals coupled to the clock terminal, drain terminals respectively coupled to the drain terminals of the second pair of transistors, and source terminals coupled to a second power supply terminal. In addition, the sense amplifier includes an output circuit coupled to the drain terminals of the second pair of transistors and having an output terminal.