Abstract: A system includes a processor for performing a thermal analysis for an IC layout, which includes a redistribution structure having a plurality of conductive layers stacked one upon another in a thickness direction. In response to a property of a first conductive layer satisfying a first condition, the processor applies a first modeling rule to the first conductive layer to obtain a first model, and, in response to the property of a second conductive layer satisfying a second condition but not the first condition, the processor applies a second modeling rule different from the first modeling rule to the second conductive layer to obtain a second model. The processor performs a thermal simulation for the IC layout based on the first and second models, and, based on the thermal simulation result, modifies the IC layout or proceeds with manufacturing one or more IC devices corresponding to the IC layout.

Abstract: A method includes forming a shallow trench isolation (STI) region in a semiconductor substrate thereby defining an active region and a passive region in the semiconductor substrate and spaced apart from each other by the STI region, forming a first sacrificial gate structure over the active region and a second sacrificial gate structure over the passive region, forming first source/drain regions in the active region and second source/drain regions in the passive region, after forming the first and second source/drain regions, replacing the first sacrificial gate structure with a metal gate structure and the second sacrificial gate structure with a metal resistor structure, the metal resistor structure corresponding to a dummy gate, forming a first gate contact over the metal gate structure, and a pair of resistor contacts over the metal resistor structure, and electrically coupling a set of metal lines with the metal resistor structure by the pair of resistor contacts.

Abstract: A delay measurement system and a measurement method are provided. The delay measurement system includes a delay control device and a comparator. The delay control device is configured to generate a second signal in response to a first signal, wherein a rising edge of the second signal delays a first delay time with respect to a rising edge of the first signal, and the first delay time is controlled in response to an output signal of a comparator. The comparator is configured to compare the first delay time with a second delay time and output the output signal, wherein a rising edge of a third signal delays the second delay time with respect to the rising edge of the first signal, and the third signal is generated by a device under test (DUT) in response to the first signal.

Abstract: A temperature adjustment module is provided. The temperature adjustment module includes a temperature changing module and a temperature control module. The temperature changing module includes a temperature changing area. The temperature changing module is in contact with a peripheral circuit element on a motherboard through the temperature changing area and a heat conduction material. The temperature control module is electrically connected to the temperature changing module and configured to control a temperature of the temperature changing module to reach a target temperature. The temperature changing module further includes a printed circuit board in the temperature changing area, and the temperature of the temperature changing module is changed by at least one of a winding wire or an electronic component on the printed circuit board.

Abstract: A temperature adjustment module and a temperature adjustment method are provided. The temperature adjustment module includes a temperature control module, a temperature changing module, and a temperature sensor. The temperature changing module is in contact with a peripheral circuit element and electrically connected to the temperature control module. The temperature sensor is in contact with the peripheral circuit element and electrically connected to the temperature control module. When a cool down module on a main circuit element of a mother board cools down the main circuit element, the temperature sensor detects a peripheral temperature of the peripheral circuit element. The temperature control module determines whether the peripheral temperature is lower than or higher than a target temperature to determine whether to operate the temperature changing module to perform temperature adjustment on the peripheral circuit element.

Abstract: A dis-pellicle tool or pellicle removal tool that includes one or more clamp structures that each include a respective group of pins. The respective pins of the groups of pins of the one or more clamp structures are configured to, in operation, be inserted into holes that are present within a pellicle frame of a pellicle. Once the respective pins of the groups of pins are inserted into the holes of the pellicle frame, a removal force may be applied to the pellicle frame to remove the pellicle from a photomask to which the pellicle is coupled to by an adhesive, glue, or some other similar type of coupling material.

Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.

Abstract: A device includes a phase detector circuit, a charge pump circuit, a sample and hold circuit, a comparator, and a controller. The phase detector circuit detects a clock skew between a reference signal and an input signal. The charge pump circuit translates the clock skew into a voltage. A sample and hold circuit samples the voltage, at a first time, and maintain the sampled voltage until a second time. The comparator (i) detects a loop gain associated with the input signal based on the sampled voltage and the voltage at the second time and (ii) outputs a loop gain signal for adjustment of the input signal. The controller is coupled to the phase detector, the comparator, and the sample and hold circuit. The controller generates a plurality of control signals for automatically controlling operation of the phase detector, the comparator, and the sample and hold circuit.

Abstract: The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of forming a spacer feature over the target material layer using a first sub-layout and performing a photolithographic patterning process using a second sub-layout to form a first feature. A portion of the first feature extends over the spacer feature. The method further includes steps of removing the portion of the first feature extending over the spacer feature and removing the spacer feature. Other methods and associated patterned semiconductor wafers are also provided herein.

Abstract: Systems, methods, and circuits for determining a duty cycle of a periodic input signal are provided. A delay element is configured to delay the periodic input signal based on a digital control word. A digital circuit is configured to generate a first digital control word used to delay the periodic input signal a first amount of time corresponding to a period of the periodic input signal, generate a second digital control word used to delay the periodic input signal a second amount of time corresponding to a portion of the periodic input signal having a logic-level high value, and generate a third digital control word used to delay the periodic input signal a third amount of time corresponding to a portion of the periodic input signal having a logic-level low value. A controller is configured to determine the duty cycle based on the first, second, and third digital control words.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having an active region as the substrate includes a medium-voltage (MV) region and a low-voltage (LV) region, forming a first divot adjacent to one side of the active region, forming a second divot adjacent to another side of the active region, forming a first liner in the first divot and the second divot and on the substrate of the MV region and LV region, forming a second liner on the first liner, and then removing the second liner, the first liner, and the substrate on the LV region for forming a fin-shaped structure.

Abstract: Digital delay lock circuits and methods for operating digital delay lock circuits are provided. A phase detector is configured to receive first and second clock signals and generate a digital signal indicating a relationship between a phase of the first clock signal and a phase of the second clock signal. A phase accumulator circuit is configured to receive the digital signal and generate a phase signal based on values of the digital signal over multiple clock cycles. A decoder is configured to receive the phase signal and generate a digital control word based on the phase signal. A delay element is configured to receive the digital control word. The delay element is further configured to change the relationship between the phase of the first clock signal and the phase of the second clock signal by modifying the phase of the second clock signal according to the digital control word.

Abstract: An antenna module is provided with a plurality of antenna structures and a shielding structure arranged on a plate body, and the shielding structure is located between two adjacent antenna structures, where the shielding structure includes a concave portion formed on the plate body and a dielectric material formed between the concave portion and the antenna structure to generate different impedance characteristics, thereby improving the antenna isolation.

Abstract: A backlight assembly is provided, comprising a backboard, one or more light sources, a diffuser plate, and one or more supporting assembly. The light sources are arranged on the backboard. The diffuser plate is arranged on the light-emitting side of the light source. The supporting assembly is arranged between the backboard and the diffuser plate. The supporting assembly comprises a supporting base and an elastic support. The supporting base connects with the backboard, one end of the elastic support is connected with the supporting base, another end of the elastic support supports the diffuser plate. The elastic support defines on a plurality of dimming grooves, the plurality of dimming grooves reflects at least a part of light emitted by the light source to the diffusion plate.

Abstract: A method includes forming a dielectric layer over a conductive feature, and etching the dielectric layer to form an opening. The conductive feature is exposed through the opening. The method further includes forming a tungsten liner in the opening, wherein the tungsten liner contacts sidewalls of the dielectric layer, depositing a tungsten layer to fill the opening, and planarizing the tungsten layer. Portions of the tungsten layer and the tungsten liner in the opening form a contact plug.

Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: A circuit is disclosed. The circuit includes a time-to-digital converter (TDC), and an evaluation circuit coupled to the TDC and a phase-locked loop (PLL) external to the circuit.

Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.

Abstract: An electronic package is provided in which an electronic component is arranged on a wiring structure and covered with a packaging layer, and a frame body that does not contact the wiring structure is embedded in the packaging layer. Therefore, thermal stress is dispersed through the frame body to avoid warpage of the electronic package, so as to facilitate the arrangement of other electronic components around the electronic component.