Patents by Inventor Chikage Noritake
Chikage Noritake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9070666Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.Type: GrantFiled: August 27, 2014Date of Patent: June 30, 2015Assignee: DENSO CORPORATIONInventors: Kuniaki Mamitsu, Takahisa Kaneko, Masaya Tonomoto, Masayoshi Nishihata, Hiroyuki Wado, Chikage Noritake, Eiji Nomura, Toshiki Itoh
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Patent number: 8957517Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.Type: GrantFiled: September 12, 2013Date of Patent: February 17, 2015Assignee: DENSO CORPORATIONInventors: Kuniaki Mamitsu, Takahisa Kaneko, Masaya Tonomoto, Masayoshi Nishihata, Hiroyuki Wado, Chikage Noritake, Eiji Nomura, Toshiki Itoh
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Publication number: 20140361425Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.Type: ApplicationFiled: August 27, 2014Publication date: December 11, 2014Inventors: Kuniaki MAMITSU, Takahisa KANEKO, Masaya TONOMOTO, Masayoshi NISHIHATA, Hiroyuki WADO, Chikage NORITAKE, Eiji NOMURA, Toshiki ITOH
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Patent number: 8884426Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.Type: GrantFiled: March 20, 2014Date of Patent: November 11, 2014Assignee: DENSO CORPORATIONInventors: Kuniaki Mamitsu, Takahisa Kaneko, Masaya Tonomoto, Masayoshi Nishihata, Hiroyuki Wado, Chikage Noritake, Eiji Nomura, Toshiki Itoh
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Publication number: 20140203426Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.Type: ApplicationFiled: March 20, 2014Publication date: July 24, 2014Applicant: DENSO CORPORATIONInventors: Kuniaki MAMITSU, Takahisa KANEKO, Masaya TONOMOTO, Masayoshi NISHIHATA, Hiroyuki WADO, Chikage NORITAKE, Eiji NOMURA, Toshiki ITOH
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Publication number: 20140015120Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.Type: ApplicationFiled: September 12, 2013Publication date: January 16, 2014Applicant: DENSO CORPORATIONInventors: Kuniaki MAMITSU, Takahisa KANEKO, Masaya TONOMOTO, Masayoshi NISHIHATA, Hiroyuki WADO, Chikage NORITAKE, Eiji NOMURA, Toshiki ITOH
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Patent number: 8558375Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.Type: GrantFiled: June 28, 2011Date of Patent: October 15, 2013Assignee: DENSO CORPORATIONInventors: Kuniaki Mamitsu, Takahisa Kaneko, Masaya Tonomoto, Masayoshi Nishihata, Hiroyuki Wado, Chikage Noritake, Eiji Nomura, Toshiki Itoh
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Patent number: 8530281Abstract: A method of producing a semiconductor module which includes a resin molded package and a coolant passage is provided. The resin molded package is made up of a thermosetting resin-made mold and a thermoplastic resin-made mold. The resin molded package is formed by making the thermoplastic resin-made mold, placing the thermoplastic resin-made mold and a semiconductor sub-assembly made up of a power semiconductor chip, heat spreaders, terminals, etc., and then forming the thermosetting resin-made mold. Specifically, the thermosetting resin-made mold is made after the thermoplastic resin-made mold, thereby creating a high degree of adhesion of the thermosetting resin-made mold to the thermoplastic resin-made mold before the thermosetting resin-made mold is hardened completely, thereby forming firmly an adhered interface between the thermosetting resin-made mold and the thermoplastic resin-made mold.Type: GrantFiled: June 23, 2011Date of Patent: September 10, 2013Assignee: Denso CorporationInventors: Chikage Noritake, Tsuyoshi Arai, Naoki Hiraiwa
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Publication number: 20120001318Abstract: A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.Type: ApplicationFiled: June 28, 2011Publication date: January 5, 2012Applicant: DENSO CORPORATIONInventors: Kuniaki MAMITSU, Takahisa Kaneko, Masaya Tonomoto, Masayoshi Nishihata, Hiroyuki Wado, Chikage Noritake, Eiji Nomura, Toshiki Itoh
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Publication number: 20110316143Abstract: A semiconductor module is provided which includes a semiconductor unit which is made by a resin mold. The resin mold has formed therein a coolant path through which a coolant flows to cool a semiconductor chip embedded in the resin mold. The resin mold also includes heat spreaders, and electric terminals embedded therein. Each of the heat spreaders has a fin heat sink exposed to the flow of the coolant. The fin heat sink is welded to a surface of each of the heat spreaders through an insulator, thus minimizing an electrical leakage from the heat spreader to the coolant.Type: ApplicationFiled: June 23, 2011Publication date: December 29, 2011Applicant: DENSO CORPORATIONInventors: Chikage NORITAKE, Hiroaki Arai, Yoshiyuki Yamauchi, Yasuou Yamazaki, Naoki Sugimoto, Yasuyuki Sakai
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Publication number: 20110316142Abstract: A semiconductor module is provided which includes a resin molded package which is made by a resinous mold assembly. The resin molded package is clamped by covers through a fastener to make the semiconductor module. The resinous mold assembly has formed therein a coolant path that is a portion of a coolant passage through which a coolant flows to coal a semiconductor chip embedded in the resin molded package. The resinous mold assembly is made up of a first mold and a second mold. The first mold has the semiconductor chip, heat spreaders, and electric terminals embedded therein. The second mold is wrapped around an outer periphery of the first mold. The second mold is made of resin which is lower in softening temperature than that of the first mold, thereby facilitating ease of removing the first mold from the resin molded package for reusing the resin molded package.Type: ApplicationFiled: June 22, 2011Publication date: December 29, 2011Applicant: DENSO CORPORATIONInventors: Chikage NORITAKE, Naoki HIRAIWA, Tsuyoshi ARAI
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Publication number: 20110318884Abstract: A method of producing a semiconductor module which includes a resin molded package and a coolant passage is provided. The resin molded package is made up of a thermosetting resin-made mold and a thermoplastic resin-made mold. The resin molded package is formed by making the thermoplastic resin-made mold, placing the thermoplastic resin-made mold and a semiconductor sub-assembly made up of a power semiconductor chip, heat spreaders, terminals, etc., and then forming the thermosetting resin-made mold. Specifically, the thermosetting resin-made mold is made after the thermoplastic resin-made mold, thereby creating a high degree of adhesion of the thermosetting resin-made mold to the thermoplastic resin-made mold before the thermosetting resin-made mold is hardened completely, thereby forming firmly an adhered interface between the thermosetting resin-made mold and the thermoplastic resin-made mold.Type: ApplicationFiled: June 23, 2011Publication date: December 29, 2011Applicant: DENSO CORPORATIONInventors: Chikage NORITAKE, Tsuyoshi Arai, Naoki Hiraiwa
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Patent number: 7944045Abstract: A semiconductor module and a method of manufacturing the same are disclosed including a semiconductor element having an electrode, a heat radiation plate placed in thermal contact with a main surface of the semiconductor element and electrically connected to the electrode thereof, an insulation body directly formed on an outside surface of the heat radiation plate, a metallic body directly formed on an outside surface of the insulation body and having a thickness lower than that of the insulation body, and a mold resin unitarily molding the heat radiation plate, the semiconductor element and the insulation body. The insulation body is covered with the metallic body and the mold resin and the metallic body has an outside surface exposed to an outside of the mold resin.Type: GrantFiled: March 4, 2009Date of Patent: May 17, 2011Assignee: Denso CorporationInventors: Chikage Noritake, Takanori Teshima, Kuniaki Mamitsu
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Patent number: 7601625Abstract: A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.Type: GrantFiled: April 19, 2005Date of Patent: October 13, 2009Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Chikage Noritake, Yoshitsugu Sakamoto, Akira Tanahashi, Hideki Okada, Tomomasa Yoshida
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Publication number: 20090224398Abstract: A semiconductor module and a method of manufacturing the same are disclosed including a semiconductor element having an electrode, a heat radiation plate placed in thermal contact with a main surface of the semiconductor element and electrically connected to the electrode thereof, an insulation body directly formed on an outside surface of the heat radiation plate, a metallic body directly formed on an outside surface of the insulation body and having a thickness lower than that of the insulation body, and a mold resin unitarily molding the heat radiation plate, the semiconductor element and the insulation body. The insulation body is covered with the metallic body and the mold resin and the metallic body has an outside surface exposed to an outside of the mold resin.Type: ApplicationFiled: March 4, 2009Publication date: September 10, 2009Applicant: DENSO CORPORATIONInventors: Chikage NORITAKE, Takanori TESHIMA, Kuniaki MAMITSU
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Patent number: 7579212Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.Type: GrantFiled: February 20, 2007Date of Patent: August 25, 2009Assignee: DENSO CORPORATIONInventors: Kimiharu Kayukawa, Akira Tanahashi, Chikage Noritake, Shoji Miura
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Patent number: 7361996Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.Type: GrantFiled: September 8, 2005Date of Patent: April 22, 2008Assignee: DENSO CORPORATIONInventors: Kimiharu Kayukawa, Akira Tanahashi, Chikage Noritake, Shoji Miura
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Publication number: 20070176293Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.Type: ApplicationFiled: February 20, 2007Publication date: August 2, 2007Applicant: DENSO CORPORATIONInventors: Kimiharu Kayukawa, Akira Tanahashi, Chikage Noritake, Shoji Miura
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Patent number: 7148125Abstract: A semiconductor device, which has a relatively low ON resistance, is manufactured using the following steps. First, a semiconductor wafer that includes a semiconductor layer and a semiconductor element layer, which is located on the semiconductor layer, is formed. Then, the wafer is ground evenly to a predetermined thickness from the side where the semiconductor layer is located. Next, the wafer is etched to a predetermined thickness from the side where the semiconductor layer is located while the periphery of the wafer is masked against the etchant to form a rim at the periphery. The wafer is reinforced by the rim at the periphery, so even if the wafer is relatively large, the wafer is prevented from breaking or warping at the later steps after the wafer is thinned by etching.Type: GrantFiled: December 5, 2002Date of Patent: December 12, 2006Assignee: Denso CorporationInventors: Mikimasa Suzuki, Chikage Noritake
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Publication number: 20060049521Abstract: A semiconductor device includes: a semiconductor substrate; a base member; a tin-based solder layer; a first metal layer; and a first alloy layer. The semiconductor substrate is bonded to the base member through the first metal layer, the first alloy layer and the tin-based solder layer in this order. The first alloy layer is made of a first metal in the first metal layer and tin in the tin-based solder layer. The first metal layer is made of at least one of material selected from the group consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium and iron-nickel-chromium alloy.Type: ApplicationFiled: September 8, 2005Publication date: March 9, 2006Applicant: DENSO CORPORATIONInventors: Kimiharu Kayukawa, Akira Tanahashi, Chikage Noritake, Shoji Miura