Abstract: A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, depositing a first photoresist layer over the substrate, removing the first photoresist layer over an n-type region, applying a first ion implantation process to the first isolation regions, wherein dopants with a first polarity type are implanted in the first isolation regions, depositing a second photoresist layer over the substrate, removing the second photoresist layer over a p-type region, applying a second ion implantation process to the second isolation regions, wherein dopants with a second polarity type are implanted in the second isolation regions, applying an annealing process to the isolation regions and recessing the first isolation regions and the second isolation regions through an etching process.

Abstract: A semiconductor device and a method of forming a semiconductor device include forming a dielectric material, performing a wet oxidation treatment on the dielectric material, and performing a dry anneal on the dielectric material. The dielectric material may be a flowable material. The wet oxidation treatment may include an acid and oxidizer mixture.

Abstract: A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, depositing a first photoresist layer over the substrate, removing the first photoresist layer over an n-type region, applying a first ion implantation process to the first isolation regions, wherein dopants with a first polarity type are implanted in the first isolation regions, depositing a second photoresist layer over the substrate, removing the second photoresist layer over a p-type region, applying a second ion implantation process to the second isolation regions, wherein dopants with a second polarity type are implanted in the second isolation regions, applying an annealing process to the isolation regions and recessing the first isolation regions and the second isolation regions through an etching process.

Abstract: A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, depositing a first photoresist layer over the substrate, removing the first photoresist layer over an n-type region, applying a first ion implantation process to the first isolation regions, wherein dopants with a first polarity type are implanted in the first isolation regions, depositing a second photoresist layer over the substrate, removing the second photoresist layer over a p-type region, applying a second ion implantation process to the second isolation regions, wherein dopants with a second polarity type are implanted in the second isolation regions, applying an annealing process to the isolation regions and recessing the first isolation regions and the second isolation regions through an etching process.

Abstract: A touch display panel includes a substrate, a plurality of data lines, a plurality of touch sensing lines, and a plurality of gate lines. The data lines are disposed above the substrate, and extend along a first direction. The touch sensing lines are disposed above the substrate, extend along a second direction different from the first direction, and intersect with the data lines. The gate lines are disposed above the substrate, extend along the second direction, and intersect with the data lines. The touch sensing lines or the gate lines and the data lines form touch sensing elements.

Abstract: A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, depositing a first photoresist layer over the substrate, removing the first photoresist layer over an n-type region, applying a first ion implantation process to the first isolation regions, wherein dopants with a first polarity type are implanted in the first isolation regions, depositing a second photoresist layer over the substrate, removing the second photoresist layer over a p-type region, applying a second ion implantation process to the second isolation regions, wherein dopants with a second polarity type are implanted in the second isolation regions, applying an annealing process to the isolation regions and recessing the first isolation regions and the second isolation regions through an etching process.

Abstract: To pattern a gate electrode, a mandrel of material is initially deposited and then patterned. In an embodiment the patterning is performed by performing a first etching process and to obtain a rough target and then to perform a second etching process with different etch parameters to obtain a precise target. The mandrel is then used to form spacers which can then be used to form masks to pattern the gate electrode.

Abstract: A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, depositing a first photoresist layer over the substrate, removing the first photoresist layer over an n-type region, applying a first ion implantation process to the first isolation regions, wherein dopants with a first polarity type are implanted in the first isolation regions, depositing a second photoresist layer over the substrate, removing the second photoresist layer over a p-type region, applying a second ion implantation process to the second isolation regions, wherein dopants with a second polarity type are implanted in the second isolation regions, applying an annealing process to the isolation regions and recessing the first isolation regions and the second isolation regions through an etching process.

Abstract: Determining installation positions of tires can include: measuring, by a magnetic sensor provided in each tire in the same manner, a first magnetic field strength in a first direction and a second magnetic field strength in a second direction, where the first direction is a circumferential or axial direction of the tire and the second direction is a radial direction of the tire; acquiring a first magnetic field strength sampling value of the tire by sampling the first magnetic field strength; acquiring a second magnetic field strength sampling value of the tire by sampling the second magnetic field strength; calculating a difference between the first and second magnetic field strength sampling values; and determining whether the installation position of the tire is on the left or right side of a vehicle according to a change trend of the calculated difference of the tire.

Abstract: A driving method of a touch display device is provided. In a first display period of a first frame time, m gate signals are sequentially provided to first to mth gate lines, respectively, wherein m is a positive integer. In a first touch control period of the first frame time immediately following the first display period, a touch driving signal is provided to a touch sensor. In another first display period of a second frame time immediately following the first frame time, p gate signals are sequentially provided to the first to gate lines, pth respectively, where p is a positive integer and is different from m. In another first touch period of the second frame time immediately following the another first display period, the touch driving signal is provided to the touch sensor.

Abstract: Devices are described herein that include a first fin structure formed on a substrate. A second fin structure formed on the substrate. One or more gate structures are formed on the first fin structure and the second fin structure. A first in-fin source/drain region is associated with a first volume and is disposed between the first fin structure and the second fin structure. A fin-end source/drain region is associated with a second volume larger than the first volume, the first fin structure being disposed between the first in-fin source/drain region and the fin-end source/drain region. The gate structures, the first in-fin source/drain region, and the fin-end source/drain region are configured to form one or more transistors.

Abstract: An in-cell touch display panel includes a substrate, a semiconductor stack, a transparent layer, an insulation layer, and a metal layer. The semiconductor stack is disposed on the substrate, and includes a plurality of pixel control elements. The transparent layer is disposed on the semiconductor layer stack, and includes a plurality of first touch electrode portions and a plurality of first connecting lines extending along a first direction. The insulation layer is disposed on the transparent layer. The metal layer is disposed on the insulation layer, and includes a plurality of second touch electrode portions and a plurality of second connecting lines extending along a second direction. The second connecting lines and the first touch electrode portions form a plurality of first touch electrode strips, and the first connecting lines and the second touch electrode portions form a plurality of second touch electrode strips.

Abstract: A control method for a touch display device including a display panel is provided. The display panel includes multiple first gate lines and multiple second gate lines respectively corresponding to a first field and a second field of a frame, and multiple sensing electrodes for touch sensing. Within one single frame period, the control method includes: scanning the first gate lines to update the first field; controlling the sensing electrodes to perform touch sensing and providing a first touch report; scanning the second gates lines to update the second field; and controlling the sensing electrodes to perform touch sensing and providing a second touch report. At least one of the first gates lines is located between two of the second gate lines, and at least one of the second gate lines is located between two of the first gate lines.

Abstract: Determining installation positions of tires can include: measuring, by a magnetic sensor provided in each tire in the same manner, a first magnetic field strength in a first direction and a second magnetic field strength in a second direction, where the first direction is a circumferential or axial direction of the tire and the second direction is a radial direction of the tire; acquiring a first magnetic field strength sampling value of the tire by sampling the first magnetic field strength; acquiring a second magnetic field strength sampling value of the tire by sampling the second magnetic field strength; calculating a difference between the first and second magnetic field strength sampling values; and determining whether the installation position of the tire is on the left or right side of a vehicle according to a change trend of the calculated difference of the tire.

Abstract: A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, depositing a first photoresist layer over the substrate, removing the first photoresist layer over an n-type region, applying a first ion implantation process to the first isolation regions, wherein dopants with a first polarity type are implanted in the first isolation regions, depositing a second photoresist layer over the substrate, removing the second photoresist layer over a p-type region, applying a second ion implantation process to the second isolation regions, wherein dopants with a second polarity type are implanted in the second isolation regions, applying an annealing process to the isolation regions and recessing the first isolation regions and the second isolation regions through an etching process.

Abstract: A touch sensing method of an electronic apparatus is provided. The electronic device includes a touch sensor and a motion sensor. The touch sensing method includes: performing touch detection with the touch sensor to generate a touch signal having a first amplitude; performing motion detection with the motion sensor to generate a motion signal having a second amplitude; determining whether the first amplitude is smaller than a first predetermined value, and determining whether the second amplitude is greater than a second predetermined value; and when the first amplitude is smaller than the first predetermined value and the second amplitude is greater than the second predetermined value, increasing a signal gain corresponding to the touch signal.

Abstract: An in-cell touch display panel includes a substrate, a semiconductor stack, a transparent layer, an insulating layer and a metal layer. The semiconductor stack is disposed on the substrate. The transparent layer is disposed on the semiconductor stack, and includes a plurality of connecting electrode strips extending along a first direction. The insulating layer is disposed on the transparent layer. The metal layer is disposed on the insulating layer, and includes a plurality of first touch electrode strips and a plurality of first touch electrode portions. The first touch electrode strips extend along a second direction. The first touch electrode portions and the connecting electrode strips form a plurality of second touch electrode strips extending along the first direction. The first touch electrode strips intersect and are insulated from the second touch electrode strips.

Abstract: A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, depositing a first photoresist layer over the substrate, removing the first photoresist layer over an n-type region, applying a first ion implantation process to the first isolation regions, wherein dopants with a first polarity type are implanted in the first isolation regions, depositing a second photoresist layer over the substrate, removing the second photoresist layer over a p-type region, applying a second ion implantation process to the second isolation regions, wherein dopants with a second polarity type are implanted in the second isolation regions, applying an annealing process to the isolation regions and recessing the first isolation regions and the second isolation regions through an etching process.

Abstract: To pattern a gate electrode, a mandrel of material is initially deposited and then patterned. In an embodiment the patterning is performed by performing a first etching process and to obtain a rough target and then to perform a second etching process with different etch parameters to obtain a precise target. The mandrel is then used to form spacers which can then be used to form masks to pattern the gate electrode.

Abstract: An in-cell touch display panel includes a substrate, a semiconductor stack, a transparent layer, an insulation layer, and a metal layer. The semiconductor stack is disposed on the substrate, and includes a plurality of pixel control elements. The transparent layer is disposed on the semiconductor layer stack, and includes a plurality of first touch electrode portions and a plurality of first connecting lines extending along a first direction. The insulation layer is disposed on the transparent layer. The metal layer is disposed on the insulation layer, and includes a plurality of second touch electrode portions and a plurality of second connecting lines extending along a second direction. The second connecting lines and the first touch electrode portions form a plurality of first touch electrode strips, and the first connecting lines and the second touch electrode portions form a plurality of second touch electrode strips.