Abstract: A plasma system with an injection device is provided. The plasma system comprises a plasma cavity and an injection device. The plasma cavity comprises a first electrode and a second for generating plasma. The injection device comprises a plasma injection tube and at least a reactant injection tube. The plasma injection tube is connected to the plasma cavity. The plasma injection tube comprises an inlet, an outlet and an outer sidewall. The plasma injection tube injects the plasma from the inlet and guides the plasma out through the outlet. The outer sidewall has a width decreasing from the inlet to the outlet. The reactant injection tube is disposed outside of the outer sidewall. The reactant injection tube injects a reactant to the outer sidewall so that the reactant flows along the outer sidewall toward the outlet and mixes with the plasma at the outlet.

Abstract: A wafer structure includes a plurality of dies, an edge portion, a passivation layer, and a UV-blocking metal layer. Each of the dies having an integrated circuit formed thereon, and the circuit includes an upmost metal layer that includes bonding pads. A composite dielectric layer corresponding to dielectric layers of the integrated circuit is disposed on the edge portion, and a cavity is formed in the composite dielectric layer over the edge portion. The passivation layer is located over the whole wafer and covers the upmost metal layer. The UV-blocking metal layer is located on the passivation layer and covers the edge portion and at least a portion of each of the dies. The cavity, the passivation layer, and the UV-blocking metal layer result in an alignment mark.

Abstract: A method for registering a pattern on a semiconductor wafer with an oxide surface includes etching into the surface four sets of two trenches each. Each trench in a set is parallel to the other. The trenches are configured such that each set forms one side of a box shape. The trenches are overfilled with a first metal layer, the excess of which is removed so that the height of the metal is level with the height of the oxide. An overlay setting is then obtained between a photoresist mask and the filled trenches before depositing a second metal layer over the oxide and trenches. The second metal layer is coated with the photoresist according to the overlay setting.

Abstract: A method for removing a photoresist is disclosed. First, a substrate including a patterned photoresist is provided. Second, an ion implantation is carried out on the substrate. Then, a non-oxidative pre-treatment is carried out on the substrate. The non-oxidative pre-treatment provides hydrogen, a carrier gas and plasma. Later, a photoresist-stripping step is carried out so that the photoresist can be completely removed.

Abstract: A pixel structure includes a bright region and a pale region, and the pale region includes a first capacitance coupling region and a second capacitance coupling region. The first capacitance coupling region includes a first coupling capacitor, the second capacitance coupling region includes a second coupling capacitor, and the first coupling capacitor and the second coupling capacitor are connected in parallel.

Abstract: A photomask structure is described, including a substrate having multiple half-tone phase shift patterns on a device region and multiple opaque patterns on a die seal ring region. By using the photomask, a side lobe effect does not occur to the photoresist layer corresponding to the die seal ring region in the exposure step.

Abstract: A method for controlling electrical power of light emission diodes (LED) is provided. The above method comprises steps of providing a supply voltage to the LED driver; providing a driving current to the LED by the LED driver; obtaining an operating voltage of the LED; and adjusting the supply voltage according to the operating voltage of the LED.

Abstract: A method for fabricating a semiconductor device is provided. A high dielectric constant (high-k) layer and a work function metal layer are formed in sequence on a substrate. A hard mask layer is formed on the work function metal layer, where the material of the hard mask layer is lanthanum oxide. The work function metal layer is patterned by using the hard mask layer as a mask. The hard mask layer is then removed. Afterwards, a gate structure is formed on the substrate.

Abstract: This invention relates to macrocyclic compounds of formula (I) shown in the specification. These compounds can be used to treat hepatitis C virus infection.

Abstract: An exposure process is described, for defining in a photoresist layer a plurality of first patterns having a first pitch and a second pattern between them that is wider than one first pattern. A first exposure step is conducted to the photoresist layer with a first photomask that has a plurality of the first patterns without a second pattern between them, wherein the first patterns on the first photomask have the first pitch only. A second exposure step is conducted to the photoresist layer with a second photomask that has a third pattern narrower than the second pattern at a position corresponding to the second pattern. The exposure dose of the first or second exposure step alone is not sufficient to define any pattern in the photoresist layer.

Abstract: A method of enabling alignment of a wafer in at least one exposure step of an integrated circuit process after a UV-blocking metal layer is formed over the whole wafer covering a patterned upmost metal layer of the integrated circuit is described, wherein the wafer has an edge portion where a composite dielectric layer corresponding to the dielectric layers of the integrated circuit is formed. The method includes forming a cavity in the composite dielectric layer over the edge portion of the wafer in the patterning process of the upmost metal layer, such that an alignment mark is formed after the UV-blocking metal layer is formed.

Abstract: A method of forming CMOS transistor is disclosed. A CMOS transistor having a first active area and a second active area is provided. In order to maintain the concentration of the dopants in the second active area, according to the method of the present invention an ion implantation process is performed to form a lightly doped drain (LDD) in the second active area after an epitaxial layer is formed in the first active area. On the other hand, the ion implantation process is performed to form the respective LDD of the first active area and the second active area. After the epitaxial layer in the first active area is formed, another ion implantation process is performed to implant dopants into the LDD of the second active area again.

Abstract: Methods and apparatus provide an adaptive load balancer that presents a virtual data system to client computer systems. The virtual data system provides access to an aggregated set of data, such as files or web service objects, available from a plurality of server data systems respectively operating within a plurality of server computer systems. The adaptive load balancer receives a client data access transaction from a client computer system that specifies a data access operation to be performed relative to the virtual data system presented to the client computer system. The adaptive load balancer processes the client data access transaction in relation to metadata associated with the virtual data system to provide access to the file or service object within a server computer system, or to access the metadata.

Abstract: The invention is directed to a method for patterning a material layer. The method comprises steps of forming a mask layer on the material layer. A multiple patterning process is performed on the mask layer for transferring at least a first pattern from a first photomask through a first photoresist and a second pattern from a second photomask from a second photoresist layer into the mask layer without performing any etching process. The mask layer exposes a portion of the material layer and the mask layer is patterned at the time that the first photoresist layer and the second photoresist layer are developed respectively. An etching process is performed to pattern the material layer by using the mask layer as an etching mask.

Abstract: The method of the present invention includes providing a semiconductor substrate with a recess; performing a pre-cleaning step on the semiconductor substrate; and performing a first reduction step, a lateral etching step and a second reduction step on the semiconductor substrate. The MOS structure includes a semiconductor substrate, a gate structure on the semiconductor substrate, a pair of recesses with beak sections extending to and under the gate structure, and a strain material filling the recess. The recess inside the semiconductor substrate processed by the method including the lateral etching step forms a beak section.

Abstract: A touch-sensing liquid crystal display (LCD) panel including an active device array substrate, an opposite substrate, and a liquid crystal layer disposed therebetween is provided. The active device array substrate includes a first substrate, a pixel array, a plurality of touch-sensing pads, and an electric field shielding layer. The pixel array is disposed on the first substrate and includes a plurality of sub-pixels arranged in an array, a plurality of scan lines, and a plurality of data lines. The touch-sensing pads are disposed on the first substrate. The electric field shielding layer is disposed on the pixel array and arranged between sub-pixels adjacent to each other, and the electric field shielding layer includes a pattern. The opposite substrate includes a common electrode and a plurality of touch-sensing protrusions disposed above the touch-sensing pads. Therefore, when the touch-sensing LCD panel is pressed, press mura is substantially eliminated.

Abstract: A flat panel display includes pixel electrodes, multiplexers and a gate driver. The gate driver has an amorphous silicon gate structure and includes a displacement temporary storage unit having a plurality of shift registers each with a power supply source and a clock terminal. One of a first voltage and a second voltage is selected and transmitted to the power supply source, and one of the first voltage and a clock signal is selected and transmitted to the clock terminal according to an off-controlling signal for causing the pixel electrodes connected to the shift registers to discharge.

Abstract: A method and an apparatus for transferring a substrate are described. In the method, a substrate is provided on the surface of a first plate at a first position, the first plate is moved from the first position to a second position in an upper space of a second plate, the substrate is lifted away from the surface of the first plate, the first plate is moved away from the second position, and the substrate is put on the surface of the second plate from the upper space. The apparatus includes a first plate and a second plate each having a surface for carrying the substrate, wherein the first plate can be moved between the first position and the second position.

Abstract: A touch panel and methods for manufacturing the same is provided. The method for manufacturing a touch panel includes providing a substrate and forming a photospacer layer on the substrate. Subsequently, a single lithography process is performed to the photospacer layer to define a main spacer and a sensor spacer. After forming a conductive layer on the main spacers and sensor spacers, a part of the conductive layer is removed to expose a top part and a part of a upper side of the main spacer. Accordingly, the conductive layer on the top part of the main spacer can be completely removed. In addition, the aperture ratio loss due to over-etching the conductive layer on the color filter can be prevented by the conductive layer remained on a lower side of the main spacer.

Abstract: A method for dynamic event matching. A domain model for each domain is defined. Individual requirements and preferences of a user are modeled to create a personal model. Dynamic requirements of a specific domain for the user are modeled. A dynamic event is generated. The dynamic event is obtained using an information server for format transformation to create an event model. The personal model is matched with the event model using a content-based method according to the domain model and the dynamic event. The user is informed of the matching results. The matching results are adjusted according to user feedback.