Abstract: A method for implementing requests from an app by a SIM in a mobile phone comprises the steps of: binding an app to a BIP server by a mobile phone; delivering a request command to the BIP server from the mobile phone; converting the request command to an APDU format, packing the converted request command in the APDU format in a request packet, and delivering the request packet to an IP of a SIM by the BIP server; receiving and unpacking the request packet to have the converted request command, and providing the converted request command to the SIM; executing the request command to have a result by the SIM; delivering the result in a response packet to the BIP server via the mobile network relayed; unpacking the response packet to fetch the result, and delivering the result to the mobile phone for the app by the BIP server.

Abstract: A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Abstract: An electrical connection structure includes a dielectric layer stack of a plurality of dielectric layers including a first dielectric layer as an uppermost layer, and a second dielectric layer under the first dielectric layer, a plurality of metal layers in the plurality of dielectric layers, a via stack in the plurality of dielectric layers that connects the plurality of metal layers, an upper metal layer on the dielectric layer stack over the via stack, and an upper dielectric layer on the dielectric layer stack and including an upper dielectric layer opening over the upper metal layer and the via stack. A number of first vias in the first dielectric layer, may be less than or equal to a number of second vias in the second dielectric layer, and the number of second vias in the second dielectric layer may be less than or equal to 3.

Abstract: The present invention relates to an optical stack and an organic light emitting diode display including the optical stack, wherein the optical stack has an adhesive layer. The adhesive layer is disposed between a cover plate and a circular polarizer component, between the circular polarizer component and a touch component, or between the touch component and a display component. Wherein, a storage modulus at 60° C. of the adhesive layer is between 15 kPa and 30 kPa, and a ratio of a storage modulus at ?30° C. to the storage modulus at 60° C. of the adhesive layer is between 6 and 16.

Abstract: A microbial carrier and a device for treating wastewater are provided. The microbial carrier includes a bacteriophilic material and a plurality of foam cells, wherein the foam cells are disposed in the bacteriophilic material. The bactericidal material is a reaction product of a composite, wherein the composition includes a hydrophobic polyvinyl alcohol and a cross-linking agent, wherein the surface energy of the hydrophobic polyvinyl alcohol is 30 mJ/m2 to 58 mJ/m2.

Abstract: A system for compliant interaction between parties may include a computing device hosting a compliance and insight platform executing on the computing device. The platform may include a secure room hosted on the platform. The secure room may include a restricted environment that hosts interaction data between users based on one or more interactions rules of the secure room. The secure room may be configured to receive interaction data from a first user in the secure room, provide at least a portion of the interaction data to a second user in the secure room, and blind and restrict the first user and the second user from each other's identity. The platform may further include a moderator of the secure room. The moderator may be configured to moderate the interaction data in the first secure room.

Abstract: Provided is a curable composition having superior weather resistance which is obtained from a cured product containing a polyoxyalkylene polymer comprising a reactive silicon group. The curable composition contains (A) a reactive-silicon-group-containing polyoxyalkylene polymer having a number-average molecular weight of 2,000 to 50,000 and containing 1.1 to 5 reactive silicon groups within a single molecule, and (B) from 0.01 to 100 parts by weight of a powdered-glass-based filler based on 100 parts of the component (A).

Abstract: A semiconductor die includes semiconductor devices located on a semiconductor substrate, metal-insulator-metal corner structures overlying the semiconductor devices and located in corner regions of the semiconductor die. Metal-insulator-metal corner structures are located in the corner regions of the semiconductor die. Each of the metal-insulator-metal corner structures has a horizontal cross-sectional shape selected from a triangular shape and a polygonal shape including a pair of laterally-extending strips extending along two horizontal directions that are perpendicular to each other and connected to each other by a connecting shape.

Abstract: An integrated circuit includes a first and second set of gate structures. A center of each of the first set of gate structures is separated from a center of an adjacent gate of the first set of gate structures in a first direction by a first pitch. A center of each of the second set of gate structures is separated from a center of an adjacent gate of the second set of gate structures in the first direction by the first pitch. The first and second set of gate structures extend in a second direction. A gate of the first set of gate structures is aligned in the second direction with a corresponding gate of the second set of gate structures. The gate of the first set of gate structures is separated from the corresponding gate of second set of gate structures in the second direction by a first distance.

Abstract: An airtight device includes a container and an airtight cover on the container, and the airtight cover includes a fixing bracket, a door, and a pressuring handle. The fixing bracket has a through hole and a guiding slot, and the through hole communicates with internal space of the container. The guiding slot has adjacent first and second top surfaces, and the second top surface is higher than the first top surface. The door selectively covers the through hole. The pressuring handle pivoted on the door has a first section, a second section, and a rotating axis between the first and second sections, and the first section rotates relative to the second section. The second section receives a force to drive the first section to move from below the second top surface to below the first top surface such that the rotating axis pressures the door.

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.

Abstract: A computer device and a multi-computer system are provided. The computer device includes a central processing unit (CPU), a wireless connection circuit, and a switch circuit. The CPU is coupled to a display to provide an enabling display signal to the display according to a hot plug detection signal provided from the display. The wireless connection circuit receives one of a wireless connection signal and a wireless disconnection signal from a wireless input device. The switch circuit is coupled between the display and the CPU and coupled to the wireless connection circuit. The switch circuit provides the hot plug detection signal to the CPU when the wireless connection circuit receives the wireless connection signal, and masks the hot plug detection signal from the CPU when the wireless connection circuit receives the wireless disconnection signal.

Abstract: An electronic device and a performance optimization method thereof are provided. The electronic device includes a battery module, a processor, and a controller. The battery module is configured to supply power to the electronic device. The processor has a power limit. The controller is configured to monitor a charging and discharging current of the battery module. In a power connection mode, the controller analyzes a status of the battery module and adjusts the power limit of the processor according to the charging and discharging current.

Abstract: A method for reducing carbon dioxide to manufacture a multi-carbon hydrocarbon compound includes steps as follows. A reduction reaction with separation and purification system is provided, which includes a carbon dioxide absorption tower, a reactor, a gas-liquid separation device, a liquid-phase purification device and a gas-phase purification device. An absorption step is performed, wherein a carbon dioxide gas is absorbed to form a mixed solution. A photocatalysis step is performed, wherein the mixed solution is reacted with a photocatalyst to form a carbon-based compound. A separation step is performed, wherein the carbon-based compound is separated to form a liquid-phase mixture and a gas-phase mixture. A liquid-phase purification step is performed, wherein the liquid-phase mixture is purified. A gas-phase purification step is performed, wherein the gas-phase mixture is separated and purified to form a multi-carbon hydrocarbon compound.

Abstract: An example apparatus to retain a computer power brick in a power brick holder includes a plate and a positioning mechanism removably attached at any of a plurality of positions on the plate. The positioning mechanism is attached at a preset position on the plate based on a size of the power brick.

Abstract: A data packet transmission method—that includes: obtaining, by a terminal, N application programs that are running; and if the N application programs include an application program including a low-latency service; determining whether an unlicensed frequency band is in a congestion state; and instructing a network device to schedule a data packet of the terminal to a licensed frequency band for transmission when the unlicensed frequency band is in a congestion state. When determining that the N running application programs include the application program including the low-latency service, the terminal may instruct the network device to schedule the data packet of the terminal to the licensed frequency band for transmission, so as to transmit a data packet of the low-latency service by using the licensed frequency band. Resources in the licensed frequency band are centrally scheduled by the network device, instead of being used through contention.

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

Abstract: A method for manufacturing a semiconductor device includes forming a conductive feature in a first dielectric layer; forming a second dielectric layer on the first dielectric layer; forming a trench that penetrates through the second dielectric layer, and terminates at the conductive feature; forming a contact layer in the trench and on the conductive feature; etching back the contact layer to form a first via contact feature in the trench, the first via contact feature being electrically connected to the conductive feature; and forming a second via contact feature on the first via contact feature in the trench.

Abstract: Various embodiments of the present disclosure provide for generating, updating, and/or otherwise managing a shared dynamic collaborative presentation progression interface in association with an audio-video conferencing interface service. An example embodiment is configured to monitor an active audio-video conference presentation that is configured for display to participating client devices by the audio-video conference interface service, generate a shared dynamic collaborative presentation progression interface, transmit the shared dynamic collaborative presentation progression interface to the plurality of participating client devices, receive an initiate topic object sequence set event from at least one participating client device of the participating client devices, identify a first topic object of the topic object sequence set as an active topic object, and update the shared dynamic collaborative presentation progression interface render an active visual emphasis element of the first topic object.

Abstract: A method includes removing a dummy gate to leave a trench between gate spacers, forming a gate dielectric extending into the trench, depositing a metal layer over the gate dielectric, with the metal layer including a portion extending into the trench, depositing a filling region into the trench, with the metal layer have a first and a second vertical portion on opposite sides of the filling region, etching back the metal layer, with the filling region at least recessed less than the metal layer, and remaining parts of the portion of the metal layer forming a gate electrode, depositing a dielectric material into the trench, and performing a planarization to remove excess portions of the dielectric material. A portion of the dielectric material in the trench forms at least a portion of a dielectric hard mask over the gate electrode.