Abstract: A method for fabricating a semi-polar nitride semiconductor is disclosed, comprising following steps: firstly, a (001) substrate tilted at 7 degrees and having a plurality of V-like grooves is provided, and tilted surfaces of the V-like groove are a (111) surface at 61.7 degrees and a ( 1 11) surface at 47.7 degrees; next, a surface of said substrate is cleaned by using a deoxidized solution, and then a buffer layer is formed on said substrate to cover said V-like grooves; then, said buffer layer is covered with an oxide layer except for said buffer layer formed on said (111) surface at 61.7 degrees; and finally, said semi-polar nitride semiconductor is formed on said buffer layer having (111) surface at 61.7 degrees to enhance the quality of said semi-polar nitride semiconductor.

Abstract: A light steel frame fan structure comprises a rotating disk, a fixing ring. A receiving groove is disposed on the rotating disk, an axial column is disposed in the receiving groove and a locking hole is disposed on the axial column; a hollow engaging column is projected from on surface of the fixing ring and an indentation portion indented inward is disposed on another surface of the fixing ring; the indentation portion is communicated with the through hole. When the fixing ring is to be folded with the rotating disk, the axial column of the rotating disk is passed through the through hole on the engaging column of the fixing ring, at least one bearing is placed in the indentation portion, and a locking element is then locked in the locking hole on the axial column to allow the rotating disk to be pivotally connected to the fixing ring. Whereby, the use life of the fan can be extended, the noise can be avoided and the components installment can be stabilized.