Abstract: A method for fabricating a semiconductor device includes first providing a substrate having a high-voltage (HV) region, a medium-voltage (MV) region, and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first base on the substrate, a first gate dielectric layer on the first base, and a first gate electrode on the first gate dielectric layer. The LV device includes a fin-shaped structure on the substrate, and a second gate electrode on the fin-shaped structure, in which a top surface of the first gate dielectric layer is even with a top surface of the fin-shaped structure.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: The present invention discloses a toilet deodorization device which belongs to sanitary equipment. An upper side at a rear part of a sitting-type toilet or a squat toilet in a bathroom is pre-built with a hole (by a conventional drill-and-cut technology) to install a connector of the deodorization device. The connector is next connected to an inner vent pipe. Through an air extractor box, a bad odor which is formed when a user is excreting is sucked in and sent to an outdoor structure along a one-way passage, so that the user can be prevented from being contaminated by the bad odor and air in the bathroom can be kept fresh and clean.