Abstract: A data protecting method for protecting a sub-directory and at least one pre-stored file in a rewritable non-volatile memory module is provided. The method includes receiving a write command from a host system and determining whether a write address indicated by the write command is an address storing a file description block of the sub-directory. The method also includes, when the write address is the address storing a file description block of the sub-directory, determining whether a portion of data streams corresponding to the write command is the same as a corresponding content recorded in the file description block of the sub-directory. The method further includes, when the portion of data streams corresponding to the write command is not the same as the corresponding content recorded in the file description block of the sub-directory, transmitting a write failure signal to the host system.

Abstract: A method for detecting touch points of multi-type objects is provided and includes the steps: detecting a plurality of touch points existing and referring the touch points as a first-type touch point or a second-type touch point according to an energy variation above a first effective value and below a second effective value or above the second effective value; if there exists at least one of the touch points not being referred as the first-type touch point or the second-type touch point, detecting an area size of the non-referred touch point and referring the non-referred touch point as the first-type touch point or the second type touch point if the area size of the non-referred touch point is smaller or larger than a first predetermined value; scanning and determining coordinate positions of the first-type touch point and the second-type touch point by performing a magnifying operation, respectively.

Abstract: In accordance with some embodiments, a method and an apparatus for baking photoresist patterns are provided. The method includes putting a wafer over a heating assembly. A photoresist pattern is formed over a top surface of the wafer. The method further includes curing the wafer from the top surface of the wafer by a curing assembly while heating the wafer from a bottom surface of the wafer by a heating assembly.

Abstract: A semiconductor device includes a device substrate and a conductive capping substrate. The device substrate includes at least one micro-electro mechanical system (MEMS) device. The conductive capping substrate is bonded to the device substrate and includes a cap portion covering the MEMS device, and a conductor portion in electrical contact with the device substrate.

Abstract: An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.

Abstract: A method for detecting touch points of multi-type objects includes: determining whether or not there existing a touch point by a detection of an energy variation below a first effective value; referring the touch point having an area smaller than a first predetermined value as a first-type touch point; referring the touch point having an area larger than a second predetermined value as a second-type touch point; detecting, if there exists the second-type touch point, the energy variation below a second effective value; and determining the coordinate position of the second-type touch point according to the detecting result obtained from the energy variation below the second effective value. The second effective value is larger than the first effective value.

Abstract: A data protecting method for protecting a sub-directory and at least one pre-stored file in a rewritable non-volatile memory module is provided. The method includes receiving a write command from a host system and determining whether a write address indicated by the write command is an address storing a file description block of the sub-directory. The method also includes, when the write address is the address storing a file description block of the sub-directory, determining whether a portion of data streams corresponding to the write command is the same as a corresponding content recorded in the file description block of the sub-directory. The method further includes, when the portion of data streams corresponding to the write command is not the same as the corresponding content recorded in the file description block of the sub-directory, transmitting a write failure signal to the host system.

Abstract: A system and a method of multi-objective capacity planning in the thin film transistor liquid crystal display (TFT-LCD) panel manufacturing industry are provided. The system includes a capacity planning module and a multi-objective planning module. In the present method, a capacity planning plan corresponding to different objective is evaluated by the capacity planning module. A set of constraints of each objective is established by the multi-objective planning module according to characteristic parameters, so as to optimize the objective. Then, the optimized objectives are drawn into a graph to select an appropriate capacity planning plan.

Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

Abstract: A system and a method of multi-objective capacity planning in the TFT-LCD panel manufacturing industry are provided. The system includes a capacity planning module and a multi-objective planning module. In the present method, a capacity planning plan corresponding to different objective is evaluated by the capacity planning module. A set of constraints of each objective is established by the multi-objective planning module according to characteristic parameters, so as to optimize the objective. Then, the optimized objectives are drawn into a graph to select an appropriate capacity planning plan.

Abstract: A semiconductor device is disclosed. The semiconductor device provides a substrate comprising an image sensor region and a circuit region, wherein the circuit region comprises a pad region and a connecting region. A multilayer interconnect structure is formed on the substrate, wherein the multilayer interconnect structure comprises a plurality of dielectric layers, a plurality of lower wirings at the pad region and the connecting region, and a top wiring on at least one of the lower wirings at the connecting region. A passivation layer is formed over the multilayer interconnect structure. A pad structure is formed through the passivation layer and at least one of the dielectric layers on and electrically connected to at least one of the lower wirings at the pad region.

Abstract: A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.

Abstract: An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor. A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens.

Abstract: An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.

Abstract: An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.

Abstract: An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor. A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens.

Abstract: An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens.

Abstract: A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.

Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.