Abstract: A computer desk comprises a base, an upright support rod fastened at one end thereof with the base, a computer desktop mounted on other end of the upright support rod, a main unit desktop mounted on the base, a periphery desktop fastened with the upright support rod and located under the computer desktop, and a keyboard desktop fastened adjustably with the upright support rod by two pivoting pieces, a bracket, a pivoting seat, two fastening rods, and a plurality of receptacles, plastic bodies and screws.

Abstract: A circulation system is capable of dual functions of providing an electrode discharge machine with water or oil to serve as a finishing fluid for the process of drilling fine holes in a work piece of an aluminiumn, steel, or tungsten steel material. The circulation system comprises an oil-water separating tank, a water filtration tank, an oil filtration tank, a water purifying device, and a control computer. The water purifying device is connected in parallel with a discharge conduit from the water filtration tank for recirculating flow to the oil-water separating tank.

Abstract: An eye mold device for electrical machining device in which the electrode with different outer diameter can be readily and firmly supported within the eye mold for machining. A substantially triangular passage is defined by three accurate rods which are disposed within a mounting groove of a receiving barrel. When the electrode is inserted within the triangular passage, the electrode can be vertically and firmly supported and calibrated therein. By this arrangement, the electrode can be prevented from skewing during the machining process. On the other hand, the circularity and verticality of the performed hole can be kept. The size of the triangular passage is defined and dependent upon the outer diameter of the three accurate rods. In practice, the three accurate rods are selected and based on the outer diameter of the electrode such that the triangular passage formed thereof is matched to the outer diameter of the electrode.

Abstract: A process for the formation of a titanium nitride/cobalt silicide bilayer for use in semiconductor processing. Titanium and then cobalt are deposited on a silicon substrate by sputter deposition techniques. The substrate is then annealed. During this process the titanium first cleans the silicon surface of the substrate of any native oxide. During the anneal, the titanium diffuses upward and the cobalt diffuses downward. The cobalt forms a high quality epitaxial cobalt silicide layer on the silicon substrate. The titanium layer diffuses upward to the surface of the bilayer. The anneal is carried out in a nitrogen or ammonia ambient, so that a titaniun nitride layer is formed.