Abstract: A system that integrates camera images and quantity sensors to determine items taken from, placed on, or moved on a shelf or other area in an autonomous store. The items and actions performed may then be attributed to a shopper near the area. Shelves may be divided into storage zones, such as bins or lanes, and a quantity sensor may measure the item quantity in each zone. Quantity changes indicate that a shopper has taken or placed items in the zone. Distance sensors, such as LIDAR, may be used for shelves that push items towards the front. Strain gauges may be used for bins or hanging rods. Quantity changes may trigger analysis of camera images of the shelf to identify the items taken or replaced. Images from multiple cameras that view a shelf may be projected to a vertical plane at the front of the shelf to simplify analysis.

Abstract: Techniques are provided for improving the performance of a wideband antenna in a mobile device. An example of an apparatus according to the disclosure includes a first radiator formed on a first plane of a wireless device, a device cover including an inside surface formed on a second plane that is above and parallel to the first plane, and a second radiator disposed on the inside surface of the device cover, such that at least a portion the second radiator is located in an area that is orthogonal to the first radiator.

Abstract: An actuating system for a window shade includes a fixed support shaft, a rotary drum pivotally connected with the support shaft and rotatable for winding or unwinding a shading structure, and a limiting mechanism at least partially disposed inside the rotary drum and including a threaded portion provided on the support shaft, a stop portion and a limiting part respectively adjacent to a first and a second end of the threaded portion, and a follower engaged with the threaded portion, the follower being rotationally coupled to the rotary drum and slidable relative to the rotary drum. The rotary drum is rotatable in a first direction to drive the follower to slide toward a first position for engagement with the limiting part, and in a second direction to drive the follower to slide toward a second position for engagement with the stop portion.

Abstract: Provided is a multi-input multi-output antenna structure configured on a substrate, and the multi-input multi-output antenna structure includes two dipole antennas and two second grounded radiators. Each dipole antenna is used for resonating a first frequency band and a second frequency band. Each dipole antenna includes a feed-in radiator and a first grounded radiator. The feed-in radiator has a feed-in end. The first grounded radiator is disposed beside the feed-in radiator and has a first grounded end. The two second grounded radiators are positioned between the two dipole antennas, the two second grounded radiators are separated from the two first grounded radiators and are respectively corresponding to the two first grounded radiators, and a bent gap is formed between the two second grounded radiators.

Abstract: A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.

Abstract: The present disclosure, in some embodiments, relates to an integrated circuit. The integrated circuit has a first inter-level dielectric (ILD) layer over a substrate. A lower electrode is over the first ILD layer, a data storage structure is over the lower electrode, and an upper electrode is over the data storage structure. An upper interconnect wire directly contacts an entirety of an upper surface of the upper electrode. A conductive via directly contacts an upper surface of the upper interconnect wire. The conductive via has an outermost sidewall that is directly over the upper surface of the upper interconnect wire.

Abstract: A probe is a probe having a substantially bar-like shape and includes a distal end portion with a substantially columnar shape adapted to be in contact with an inspection point provided on a device under test, a base end portion with a substantially columnar shape on an opposite side of the distal end portion, and a main body portion formed in a flat ribbon shape and extended to connect the distal end portion to the base end portion. The distal end portion is provided with a distal end surface inclined relative to and intersecting with an axial center of the probe.

Abstract: The present disclosure provides novel compounds, including compounds that bind to potassium channels, methods for their manufacture, and methods for their use, including their use to diagnose and/or assess traumatic brain injury and use to treat dymeylinating diseases, and/or in vivo imaging of the central neverous system, and to diagnose and/or assess the progression of MS or other diseases.

Abstract: A method includes removing a dummy gate to leave a trench between gate spacers, forming a gate dielectric extending into the trench, depositing a metal layer over the gate dielectric, with the metal layer including a portion extending into the trench, depositing a filling region into the trench, with the metal layer have a first and a second vertical portion on opposite sides of the filling region, etching back the metal layer, with the filling region at least recessed less than the metal layer, and remaining parts of the portion of the metal layer forming a gate electrode, depositing a dielectric material into the trench, and performing a planarization to remove excess portions of the dielectric material. A portion of the dielectric material in the trench forms at least a portion of a dielectric hard mask over the gate electrode.

Abstract: A garden sprinkler securing structure has two base members, and one of the base members has an input opening and an output opening. The input opening is configured to connect to a water source, and the output opening is provided with a sprinkler pivoted between the two base members. When water from the water source enters the input opening to drive the sprinkler to repeatedly swing between the base members. The two base members respectively further have two supporting legs at opposite sides, a bottom side of each supporting leg engages with a connecting member, and the connecting member is pivoted with a grounding nail. An outer side of each supporting leg of the base members is provided with a containment space at a bottom side, and the containment space is configured for accepting the engaged connecting member.

Abstract: Described herein is a liquid electrostatic ink developer assembly comprising a developer roller having a surface coating, the surface coating comprising a polyurethane resin formed from a polyol; a hydroxyl-terminated polysiloxane; and a polyisocyanate. Also, described herein is a liquid electrostatic printing apparatus comprising the liquid electrostatic ink developer assembly.

Abstract: This application relates generally to toll like receptor modulator compounds and pharmaceutical compositions which, among other things, modulate toll-like receptors (e.g. TLR8), and methods of making and using them.

Abstract: An antifuse structure includes an active area and a gate electrode over the active area. The active area includes a first body portion and a first extending portion extending in a first direction. The gate electrode includes a second body portion and a second extending portion extending in a second direction perpendicular to the first direction. The first body portion includes a first surface facing a portion of the second body portion, and the second body portion includes a second surface facing a portion of the first extending portion. The first extending portion and the second extending portion are partially overlapped in a third direction perpendicular to both the first direction and the second direction, with a dielectric layer sandwiched between the first and second extending portions, forming an intersection area.

Abstract: A method of setting a designee for a user (designator) in instant messaging is proposed. In the instant messaging, the designator operates a designator-side device to select a contact to be a messaging object corresponding to an object-side device, and select another contact to be a messaging designee corresponding to a designee-side device, causing an instant messaging server to activate a deputy mode. In the deputy mode, when the designee-side device is operated to send a message to the object-side device through the instant messaging server, the instant messaging server transmits the message to the object-side device in the name of the designator-side device, and also transmits the message to the designator-side device.

Abstract: The present disclosure describes structures and methods for a via structure for three-dimensional integrated circuit (IC) packaging. The via structure includes a middle portion that extends through a planar structure and a first end and a second end each connected to the middle portion and on a different side of the planar structure. One or more of the first end and the second end includes one or more of a plurality of vias and a pseudo metal layer.

Abstract: An integrated circuit includes a first set of devices, a set of metal layers and a header circuit. The first set of devices are configured to operate on a first supply voltage, and are located on a first layer of the integrated circuit. The set of metal layers are above the first layer, and includes a first metal layer and a second metal layer. The first metal layer extends in at least a first direction and a second direction. The header circuit is above the first set of devices. At least a portion of the header circuit is positioned between the first metal layer and the second metal layer. The header circuit is configured to provide the first supply voltage to the first set of devices, and is configured to be coupled to a second voltage supply having a second supply voltage different from the first supply voltage.

Abstract: A ceramic saw includes a sliding cutting table including two intermediate islands, a flat, left portion to the left of the intermediate islands, and a flat, right portion to the right of the intermediate islands; a first longitudinal groove inclined and disposed between the left portion and the intermediate islands, a second longitudinal groove between the intermediate islands, and a third longitudinal groove inclined and disposed between the right portion and the intermediate islands; a plurality of inclined, transverse grooves across the left portion, the right portion, and the intermediate islands; a rectangular groove formed along four edges of the cutting table; a first drain disposed on the first longitudinal groove, a second drain disposed on the second longitudinal groove, and a third drain disposed on the third longitudinal groove; and the first, second and third longitudinal grooves, the transverse grooves, and the rectangular groove communicate with one another.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor interposer device. The semiconductor interposer device includes a substrate and a first metallization layer formed on the substrate. A first dielectric layer is formed on the first metallization layer and a second metallization layer is formed on the substrate. A first conducting line is formed in the first metallization layer and second and third conducting lines are formed in the second metallization layer. A metal-insulator-metal (MIM) capacitor is formed in the first dielectric layer and over the first conducting line.

Abstract: A method for forming a semiconductor structure is provided. A substrate including a metal portion and a low-k dielectric portion formed thereon is provided. The metal portion adjoins the low-k dielectric portion. A SAM solution is prepared. The SAM solution includes at least one blocking compound and a multi-solvent system. The multi-solvent system includes an alcohol and an ester. The SAM solution is applied over surfaces of the metal portion and the low-k dielectric portion. The substrate is heated to remove the multi-solvent system of the SAM solution to form a blocking layer on one of the metal portion and the low-k dielectric portion. A material layer is selectively deposited on the other one of the metal portion and the low-k dielectric portion using the blocking layer as a stencil. The blocking layer is removed from the substrate.

Abstract: Semiconductor systems, apparatuses and methods are provided. In one embodiment, an extreme ultraviolet lithography system includes a substrate stage configured to secure a substrate at a first vertical level, wherein the substrate is deposited with a resist layer thereon; at least one electrode positioned at a second vertical level above the first vertical level; and a power source configured to apply an electric field across the at least one electrode and the substrate stage, including across a thickness of the resist layer when the substrate is secured on the substrate stage.