Abstract: Semiconductor systems, apparatuses and methods are provided. In one embodiment, an extreme ultraviolet lithography system includes a substrate stage configured to secure a substrate at a first vertical level, wherein the substrate is deposited with a resist layer thereon; at least one electrode positioned at a second vertical level above the first vertical level; and a power source configured to apply an electric field across the at least one electrode and the substrate stage, including across a thickness of the resist layer when the substrate is secured on the substrate stage.

Abstract: A computer-implemented method, according to one embodiment, includes calculating or receiving a normalized score for each segment of at least one route based on physical route conditions and environmental route conditions of the associated route, generating a pace comparison of multiple actors participating in a physical activity under different route conditions, and outputting the pace comparison. The pace comparison is based on the normalized scores of the segments of the route associated with each respective actor and a pace of each respective actor on the respective route. A computer program product for comparing paces of multiple actors, according to another embodiment, includes a computer readable storage medium having program instructions embodied therewith. The program instructions are readable and/or executable by a computer to cause the computer to perform the foregoing method.

Abstract: A method includes providing a semiconductor structure having an active region and an isolation structure adjacent to the active region, the active region having source and drain regions sandwiching a channel region for a transistor, the semiconductor structure further having a gate structure over the channel region. The method further includes etching a trench in one of the source and drain regions, wherein the trench exposes a portion of a sidewall of the isolation structure, epitaxially growing a first semiconductor layer in the trench, epitaxially growing a second semiconductor layer over the first semiconductor layer, changing a crystalline facet orientation of a portion of a top surface of the second semiconductor layer by an etching process, and epitaxially growing a third semiconductor layer over the second semiconductor layer after the changing of the crystalline facet orientation.

Abstract: An electrospray atomizing device that sprays at a constant rate comprises a main unit containing a circuit board, an electrode plate, liquid tanks and syringes. The electrode plate includes the sealed liquid tanks and the syringes, and the circuit board connects electric current to the electrode plate and the syringes. The present invention further includes a power mechanism and a dosing device. The power mechanism drives a screw to ascend or descend, pushing the pistons of the dosing device through a speed changer. The syringes are connected with the liquid tanks. When the pistons are linked by the power mechanism and the speed changer to ascend, the liquid in the liquid tanks is sprayed at a constant rate through the syringes, forming mist which carries negative ions. When the pistons descend, the ambient liquid is sucked into the liquid tanks through the syringes, waiting for a next electrospray.

Abstract: Some embodiments of the present disclosure relate to a high electron mobility transistor (HEMT) which includes a heterojunction structure arranged over a semiconductor substrate. The heterojunction structure includes a first III/V semiconductor layer, and a second III/V semiconductor layer arranged over the first III/V semiconductor layer. Source and drain regions are arranged over the second III/V semiconductor layer and are spaced apart laterally from one another. A gate structure is arranged over the heterojunction structure and is arranged between the source and drain regions. The gate structure is made of a third III-nitride material. A first passivation layer is disposed about sidewalls of the gate structure and is made of a fourth III-nitride material.

Abstract: An integrated power module of an electric scooter includes a motor unit and a transmission unit. The motor unit includes a motor case, in which a stator, a rotor and a shaft are provided. A board is fixed to an end of the motor case, and a holder is fixed to the board. The transmission unit has a lid connected to the board to form a lubricant chamber. The motor shaft passes through the holder to the lubricant chamber. The transmission unit further includes a transmission shaft, which is connected to the motor shaft through a pair of meshed gears. The motor shaft is provided with a spiral slot to force lubricant in the holder flowing to the lubricant room instead of flowing to the motor unit when the motor shaft is rotating.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a transistor device. The method may be performed by forming an anode and a cathode over an electron supply layer disposed on a semiconductor material. A doped III-N semiconductor material is formed over the electron supply layer, and an insulating material is formed over the electron supply layer and the doped III-N semiconductor material. The insulating material continuously extends from over the anode to over the cathode. The insulating material is patterned to form sidewalls of the insulating material that define an opening over the doped III-N semiconductor material. A gate structure is formed directly between the sidewalls of the insulating material and over the doped III-N semiconductor material.

Abstract: An electronic modulating device is provided. The electronic modulating device includes a first substrate. The first substrate includes a first portion and a second portion. The electronic modulating device also includes a second substrate disposed opposite to the first substrate. The electronic modulating device further includes at least one working device disposed between the first substrate and the second substrate, wherein the working device overlaps the first portion and does not overlap the second portion. In addition, the electronic modulating device includes a first adjustment unit disposed between the first portion of the first substrate and the second substrate. The first adjustment unit has a first elastic coefficient. The electronic modulating device also includes second adjustment unit disposed between the second portion of the first substrate and the second substrate. The second adjustment unit has a second elastic coefficient that is greater than the first elastic coefficient.

Abstract: A method of using Neoandrographolide for lowering blood sugar, lowering blood lipid, improving liver function and improving renal function. The method includes preparing a composition comprising Neoandrographolide as the active ingredient, and administering the composition to lower the blood sugar or blood lipid of a user, to prevent a decrease in liver function of a user, or to improve the renal function of a user. The Neoandrographolide is the only active ingredient in the composition.

Abstract: This application relates to an apparatus for attaching a polarized plate with check mark and a checking method therefor. The apparatus includes: a carrying platform, configured to carry a polarized plate, where the polarized plate has the check mark; a drawing unit, disposed at one side of the carrying platform and configured to draw the polarized plate out of the carrying platform; an image sensing and processing unit, disposed above the drawing unit and configured to photograph the mark of the polarized plate and to compare the mark with a mark of a polarized plate standard template to determine whether the marks conform to each other; a cleaning unit, disposed at one side of the drawing unit and configured to clean the polarized plate from the drawing unit; and an alignment unit, disposed at one side of the cleaning unit and configured to align the polarized plate from the cleaning unit with a display panel.

Abstract: A TDMA network device compatible with other networks is disclosed. It needs no additional control signals. Based on received data packets or data volume to process time synchronization and time division based on received data and prepared in advance, it is to ensure that every node can calculate approximate time allocation and pass the time division features to the next layer of network.

Abstract: The present application provides a method for determining whether a line piece is corresponding to a stylus tip. The method comprises: gathering multiple touch sensitive signal values corresponding to the line piece; calculating a first slope at edge of the line piece; determining whether the first slope is larger than a slope threshold; and determining that the line piece is corresponding to the stylus tip if the first slope is larger than the slope threshold.

Abstract: Provided herein is a printing apparatus that includes a printhead assembly and a plurality of printhead pressure load modules that are adjustable on a shaft of a printhead pressure load assembly and engaged with a printhead member. The printhead pressure load module has a hollow housing, a plunger member, and a rotary cam. The plunger member and the rotary cam are movably engaged in the hollow housing. The rotary cam includes a plurality of channel members defined at an outer surface. Each channel member has a depth that is different from a depth of an adjacent channel member. A movement of the plunger member inwardly through the hollow housing defines a position of the rotary cam along the longitudinal axis with respect to the hollow housing. Position change of the rotary cam defines a force that acts on a pressure contact member and adjusts a load on the printhead assembly.

Abstract: Disclosed herein is an oral dosage formulation suitable for treating a neurodegenerative disorder. The oral dosage formulation contains both sustained-release and immediate-release drugs. The sustained-release drug in the oral dosage formulation is memantine, and the immediate-release drug in the oral dosage formulation is donepezil and/or memantine, and the formulation is characterized in having a pH-independent dissolution profile of memantine at a pH range from about 1.0 to about 7.0.

Abstract: Techniques involving migrating authenticated content on a network towards the consumer of the content. One representative technique includes a network node receiving an encrypted seed having at least a location of the user data at a network service that stores the user data, and a cryptographic key to access the user data. The seed is received in response to a user login attempt to the network service. The user data is requested from the location using at least the received cryptographic key. The method further includes receiving and storing the user data at the network node, where the network node is physically closer to a location of the user than is the location of the network service. If the user is successfully authenticated, user access is provided to the stored user data at the network node rather than from the network service.

Abstract: Apparatus and methods may be provided that may include a single bracket (e.g., a single universal support or anchor bracket) capable of operably mounting or supporting multiple diverse configurations of system hardware components (e.g., such as solid state drive (SSD) cards) to an existing motherboard or other system support component/surface on or within the same system chassis of an information handling system.

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by a shared micro-lens. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array to receive incident light.

Abstract: Methods, systems, and devices for wireless communications are described that provide for a user equipment (UE) to report packet switched voice call capabilities to a base station. The UE may explicitly report voice call capabilities via one or more system-level parameters that are transmitted to the base station. The base station may operate in a first radio access network (RAN), such as a 5G or new radio (NR) RAN. In cases where the UE indicates a capability for packet switched voice calls via the first RAN, one or more voice calls may be established with the UE via the first RAN. In cases where the UE indicates that it is not capable of packet switched voice calls via the first RAN, the UE may fall back to a different RAN (e.g., a 4G or LTE RAN, a 3G RAN, or a 2G RAN) for voice calls.

Abstract: A computer case including a frame, a motherboard stand and a motherboard extension stand is provided. The frame includes a front plate, a rear plate, a top plate and a bottom plate. The motherboard stand is adjacent to the top plate and the rear plate. The motherboard extension stand is connected to the motherboard stand and has a first position or a second position. When the motherboard extension stand is located at the first position, the motherboard extension stand and the motherboard stand are disposed in parallel, and two sides of the motherboard extension stand are respectively connected to the motherboard stand and the front plate. When the motherboard extension stand is located at the second position, the motherboard extension stand is parallel to the front plate and the rear plate, and located between the front plate and the rear plate.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a pair of source/drain regions disposed in a semiconductor substrate, where the source/drain regions are laterally spaced. A gate electrode is disposed over the semiconductor substrate between the source/drain regions. Sidewall spacers are disposed over the semiconductor substrate on opposite sides of the gate electrode. A silicide blocking structure is disposed over the sidewalls spacers, where respective sides of the source/drain regions facing the gate electrode are spaced apart from outer sides of the sidewall spacers and are substantially aligned with outer sidewalls of the silicide blocking structure.