Abstract: A method for electroless metal deposition and an electroless metal layer included substrate are provided. The method for electroless metal deposition includes steps as follows. a) cleaning a substrate, applying a hydrofluoric acid onto the substrate; and then applying a modifying agent onto the substrate to form a chemical oxide layer on the substrate; b) a catalyst layer is formed on the chemical oxide layer, wherein, the catalyst layer includes a plurality of colloidal nanoparticles, and each of the plurality of colloidal nanoparticles includes a palladium nanoparticle and a polymer which encapsulates the palladium nanoparticle, and c) depositing a metal on the catalyst layer through an electroless metal deposition to form an electroless metal layer.

Abstract: Various solutions for maintaining a radio resource control (RRC) connection with respect to user equipment and network apparatus in mobile communications are described. An apparatus may establish an RRC connection with a network node. The apparatus may transmit a layer 2 packet to maintain the RRC connection after a period of time without data transmission. The apparatus may transmit uplink data via the RRC connection without re-establishing the RRC connection.

Abstract: Micro LED and microdriver chip integration schemes are described. In an embodiment a microdriver chip includes a plurality of trenches formed in a bottom surface of the microdriver chip, with each trench surrounding a conductive stud extending below a bottom surface of the microdriver chip body. Integration schemes are additionally described for providing electrical connection to conductive terminal contacts and micro LEDs bonded to a display substrate and adjacent to a microdriver chip.

Abstract: A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.

Abstract: A display may have an array of pixels formed from organic light-emitting diodes and thin-film transistor circuitry. Each pixel may include organic layers interposed between an anode and a cathode. The organic layers may emit out-coupled light that escapes the display and waveguided light that is waveguided within the organic layers. A reflector may be placed at the edge of the organic layers to reflect the waveguided light out of the display. The reflector may be located within a pixel definition layer and may be formed from metal or may be formed from one or more interfaces between high-refractive-index material and low-refractive-index material, The reflector may be formed from an extended portion of the pixel anode. The reflector may be formed from light-reflecting particles that are suspended in the pixel definition layer.

Abstract: Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

Abstract: A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.

Abstract: A method for electroless metal deposition includes steps as follows. a) a substrate is provided, and the substrate has a surface which is subjected to a hydroxide surface modification to form a hydrophilic chemical oxide layer; b) a catalyst layer is formed on the chemical oxide layer, the catalyst layer includes a plurality of colloidal nanoparticles, and each of the plurality of colloidal nanoparticles includes a palladium nanoparticle and a high molecular polymer which wraps the palladium nanoparticle; and c) an electroless metal deposition is conducted, and a metal is deposited on the catalyst layer to form an electroless metal layer. An electroless metal layer included substrate is also provided.

Abstract: An energy conversion device in electrical communication with at least one fin is provided to output multiple voltages. The at least one fin which is originating from inside the energy conversion device, which is formed from a metal contact disposed between energy conversion device components, and which is spaced with a first end contact and a second end contact. A power transistor module includes at least one transistor, a gate driver and the energy conversion device. The gate driver is configured to drive the at least one transistor. The energy conversion device is configured to supply isolated voltages to the gate driver.

Abstract: Thermal, electrical and/or optical interfacing for three-dimensional optoelectronic devices, such as semiconductor device billets, allows high intensity operation, such as for receiving and transducing extremely high intensity light shined onto a small surface semiconductor optoelectronic device such as a photovoltaic receiver or cell, transducer, waveguide or splitter. This allows high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for high intensity power beaming and wireless power transmission. Preferred embodiments include three-dimensional photovoltaic receiver billets capable of receiving thousands of suns intensity or high intensity laser light for power conversion, such as by using edge-illuminated vertical multijunction photovoltaic receivers. Heat sink holding structures assist in thermal and electromagnetic communication with opposing billet surfaces.

Abstract: New high energy operating regimes for high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for power beaming and wireless power transmission are made possible by new direct thermal pathways for heat sinking, where an energy conversion device comprises a plurality of fins [1] originating from inside the energy conversion device; [2] formed from an energy conversion device component; and where those fins [3] individually support traffic in energy carriers essential to the function of the energy conversion device. This allows high energy thermal interfacing and high intensity energy conversion, such as for receiving and transducing extremely high intensity light shined onto a small surface semiconductor device such as a vertical multijunction photovoltaic receiver. This allows high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for high intensity power beaming and wireless power transmission.

Abstract: Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

Abstract: A voltage source generator includes a light-transmissive component and a plurality of vertical multi junction (VMJ) cells. The light-transmissive component includes an inner space. The VMJ cells are disposed within the inner space of the light-transmissive component to receive light and perform light-to-electricity conversion. The VMJ cells are connected in series. The voltage source generator can generate a kV-level voltage and meet small-sized and low-cost demands. A voltage source module includes at least two voltage source generators connected to at least one electrical connector.

Abstract: A solar cell includes a vertical multi-junction (VMJ) cell and a passivation layer. The VMJ cell includes a plurality of PN junction substrates spaced from each other and a plurality of electrode layers. Each of the PN junction substrates includes a P+ type end surface, a P type end surface, an N type end surface, and an N+ type end surface. Each of the electrode layers is disposed between and connected to two adjacent PN junction substrates and has an exposing surface. The passivation layer covers the P+ type end surfaces, the P type end surfaces, the N type end surfaces, the N+ type end surfaces and the exposing surfaces to reduce a carrier recombination probability induced by absorbing sunlight. A method of manufacturing the solar cell includes providing a vertical multi-junction (VMJ) cell and forming a passivation layer on the VMJ cell.

Abstract: A concentration photovoltaic cell system with light guide includes a concentrator for focusing sunlight; a light guide located at where the sunlight is focused by the concentrator, so that the focused light is fully coupled to an input end of the light guide and propagates to an output end of the light guide; and a solar energy converter arranged at the output end of the light guide for receiving and converting the light projected from the light guide into electric energy. With the above arrangements, the solar converter may be located at a place not exposed to sunlight to avoid lowered energy conversion efficiency caused by temperature rising at photovoltaic cell chips thereof, and the use of the light guide enables increased GCR and light concentrating efficiency to enable reduced number of expensive photovoltaic cells.

Abstract: A protection circuit for power of a car is located between an output terminal of a car power and a car's electronic device input terminal. The protection circuit includes a transient voltage suppressing diode, a diode, and a filtering circuit. The two terminals of the transient voltage suppressing diode are connected with the output terminal of car power. The diode is connected with the transient voltage suppressing diode and the output terminal of car power. The filtering circuit is connected with the diode and the car's electronic device input terminal. Thereby, the transient voltage suppressing diode of the present invention clamps the ripple at a safe voltage to assure the life of the car's electronic device. Furthermore, the transient voltage suppressing diode and the filtering circuit can prevent the car's electronic device from being interfered and damaged due to the ESD. The reliability of the electronic device is enhanced.