Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer, wherein the bottom electrode layer comprises a gradient concentration; forming a free layer on the bottom electrode layer; forming a top electrode layer on the free layer; and patterning the t op electrode layer, the free layer, and the bottom electrode layer to form a magnetic tunneling junction (MTJ).

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.

Abstract: A method of fabricating fins includes providing a silicon substrate. The silicon substrate is etched to form numerous fin elements. A surface of each of the fin elements is silicon. Etch residues are formed on the fin elements after the silicon substrate is etched. After that, a flush step is performed on the fin elements by flushing the surface of each of the fin elements with fluorocarbons. The etch residues on the fin elements are removed by the flush step. After the flush step, a strip step is performed on the fin elements by treating the surface of each of the fin elements with oxygen plasma.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.

Abstract: A method of fabricating fins includes providing a silicon substrate. The silicon substrate is etched to form numerous fin elements. A surface of each of the fin elements is silicon. Etch residues are formed on the fin elements after the silicon substrate is etched. After that, a flush step is performed on the fin elements by flushing the surface of each of the fin elements with fluorocarbons. The etch residues on the fin elements are removed by the flush step. After the flush step, a strip step is performed on the fin elements by treating the surface of each of the fin elements with oxygen plasma.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.

Abstract: A communication method employed in a wireless communication system including a first communication device and a second communication device is provided. The communication method includes: setting up a connection between the first and second communication devices; after the connection is set up, checking if both the first and second communication devices provide a symbol mapping function for converting a first modulation/demodulation to a second modulation/demodulation different from the first modulation/demodulation; and when both the first and second communication devices provide the symbol mapping function, using the second modulation/demodulation to replace the first modulation/demodulation so that each of the first and second communication devices communicates with each other by using the second modulation/demodulation.

Abstract: A signal converter. The signal converter converts an analog inphase signal and an analog quadrature phase signal into a digital baseband inphase signal and a digital baseband quadrature phase signal. The analog inphase signal and the analog quadrature phase signal are orthogonal to each other and are carried in a predetermined intermediate frequency. The digital baseband inphase signal and the digital baseband quadrature phase signal are carried in zero frequency. The signal converter comprises a signal combiner combining the analog inphase signal and the analog quadrature phase signal to obtain an analog combined signal, an analog to digital converter converting the analog combined signal to a digital combined signal, and a signal separator separating the digital combined signal to obtain the digital baseband inphase signal and the digital baseband quadrature phase signal.

Abstract: A communication method employed in a wireless communication system including a first communication device and a second communication device is provided. The communication method includes: setting up a connection between the first and second communication devices; after the connection is set up, checking if both the first and second communication devices provide a symbol mapping function for converting a first modulation/demodulation to a second modulation/demodulation different from the first modulation/demodulation; and when both the first and second communication devices provide the symbol mapping function, using the second modulation/demodulation to replace the first modulation/demodulation so that each of the first and second communication devices communicates with each other by using the second modulation/demodulation.

Abstract: A signal converter. The signal converter converts an analog inphase signal and an analog quasdrature phase signal into a digital baseband inphase signal and a digital baseband quadrature phase signal. The analog inphase signal and the analog quadrature phase signal are orthogonal to each other and are carried in a predetermined intermediate frequency. The digital baseband inphase signal and the digital baseband quadrature phase signal are carried in zero frequency. The signal converter comprises a signal combiner combining the analog inphase signal and the analog quadrature phase signal to obtain an analog combined signal, an analog to digital converter converting the analog combined signal to a digital combined signal, and a signal separator separating the digital combined signal to obtain the digital baseband inphase signal and the digital baseband quadrature phase signal.