Abstract: A light emitting element including an epitaxy layer, at least one first electrode, at least one second electrode, a first bonding pad and a second bonding pad. The epitaxy layer includes in sequence a first semiconductor layer, an active layer and a second semiconductor layer, and the first semiconductor layer has an exposed portion exposed from the second semiconductor layer and the active layer. The first electrode is disposed at the exposed portion. The second electrode is disposed at the second semiconductor layer. The first bonding pad is connected with the first electrode. The second bonding pad is connected with the second electrode. Two light emitting elements with different structures and the light emitting module utilizing the light emitting elements mentioned above are also disclosed.

Abstract: A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.

Abstract: A lighting apparatus includes a circuit board, at least one LED, an optical element, a lampshade and at least one fluorescent material. The LED is disposed on the circuit board. The optical element is disposed above the LED, and has at least one reflective surface so that light emitted from the LED to the optical element partially penetrates through and is partially reflected by the optical element. The lampshade covers the circuit board, the LED and the optical element. The fluorescent material is doped within the lampshade.

Abstract: An illumination apparatus includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. The light emitted from the third light-emitting device is selectively mixed with the light emitted from the first light-emitting device or the second light-emitting device to form a white light having a chromaticity coordinate point substantially located on a Black Body Locus. A color of the light emitted from the third light-emitting device is determined by linear relationships between chromaticity coordinate points corresponding to wavelengths of the lights emitted form the first light-emitting device and the second light-emitting device and corresponding to a color temperature of the white light. A method for generating a white light is also disclosed herein.

Abstract: A lighting apparatus includes a circuit board, a plurality of light-emitting diode (LED) units and an optical element. The optical element is transflective. The LED units and the optical element are disposed on the circuit board. The optical element has at least one reflective surface so that lights emitted from the LED units to the optical element partially penetrate through and are partially reflected by the optical element.

Abstract: A multi-directional bulb-type lamp is disclosed. The multi-directional bulb-type lamp includes a carrying body, a flexible substrate, and a plurality of LED dies. The flexible substrate is a substrate extending toward multi-directions and attached to the carrying body along a surface thereof. The LED dies are directly disposed on the flexible substrate and electrically connected thereto. Whereby, structures of the bulb-type lamp will be simplified for easy assembly, and multi-directional lighting will be reached.

Abstract: A light emitting diode comprises a multi-layer semiconductor, a first electrode and a second electrode. The multi-layer semiconductor has a light emitting active layer substantially perpendicular to the predetermined surface, a first semiconductor layer located on a surface of the light emitting active layer and a second semiconductor layer located on an opposite surface of the light emitting active layer. The first electrode is provided adjacent to and electrically connect to the first semiconductor layer. The second electrode is provided adjacent to and electrically connect to the second semiconductor layer. In addition, a method of fabricating LED element and a light emitting device having the LED elements are provided.

Abstract: A highly directional light source device, more specifically, a light emitting element electrically connected on a substrate to produce light, and one interior having a photon recycler with a reflective surface, covered and set on one side of this substrate, and an opening set in the center of the top of the cover which corresponds with the light emitting element, thereby allowing the light from the light emitting element to be directly emitted out the opening, and then to be reflected back to the light emitting element through the reflective surface of the photon recycler, and after light is reflected or refracted according to the structure of the light emitting element, again through the opening the light is emitted onto the photon recycler, thereby achieving increased Étendue of the highly directional light source device and achieving the goal of effective light emission.

Abstract: A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Abstract: A light source module is provided. The light source module includes a full wave rectifier, a constant current output integrated circuit (IC) and at least one high operating voltage light emitting diode (HVLED) die coupled between the constant current output IC and a ground. The full wave rectifier generates a rectified signal according to an alternating current (AC) power. The constant current output IC outputs a constant current signal according to the rectified signal. A brightness of the HVLED die is determined by the constant current signal.

Abstract: A LED light source in a single package for raising the color-rendering index is provided. The LED light source comprises a substrate, at least one covering layer, a primary light source, and a secondary light source. The primary and the secondary light sources are formed on the substrate and coated with the at least one covering layer to provide a first output light and a second output light, respectively. The total output light is a mixed color of the first output light and the second output light.

Abstract: A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Abstract: An electroluminescent module includes a module substrate, a thermal-conducting carrier substrate and a light-emitting element. The module substrate has an opening, a first surface and a first patterned electrode disposed on the first surface. The thermal-conducting carrier substrate has a carrying element and a second patterned electrode disposed on the carrying element. The carrying element is disposed opposite to the first surface of the module substrate, and the second patterned electrode is disposed facing to the first patterned electrode and electrically connected to the first patterned electrode. The light-emitting element is located at the opening and disposed on the thermal-conducting carrier substrate. The light-emitting element has a first electrode and a second electrode, both of which are respectively electrically connected to the corresponding portions of the second patterned electrode of the thermal-conducting carrier substrate.

Abstract: A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Abstract: An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.

Abstract: A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.

Abstract: An illuminating device includes a substrate, an illuminating element, at least one barricade and at least one cover layer. The illuminating element is disposed on the substrate. The barricade is protruded from a surface of the substrate and disposed around the illuminating element continuously or discontinuously to form a first accommodating area. The cover layer is disposed in the first accommodating area for covering the illuminating element.

Abstract: A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.

Abstract: An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.

Abstract: An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.