Patents by Inventor Ching Chuang

Ching Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160108525
    Abstract: A method of forming a patterned metal unit on an article. The method includes the steps of: providing an article that has an insulating surface; transferring a catalyst layer onto the insulating surface of the article, the catalyst layer including a catalytic material; removing a part of the catalyst layer to form a patterned catalyst layer; and forming a patterned metal layer on the patterned catalyst layer by an electroless plating technique to obtain a patterned metal unit that is constituted by the patterned catalyst layer and the patterned metal layer.
    Type: Application
    Filed: October 16, 2015
    Publication date: April 21, 2016
    Applicant: Taiwan Green Point Enterprises Co., Ltd.
    Inventors: Pen-Yi LIAO, Hui-Ching CHUANG, Chih-Hao CHEN, Jing-Yi YANG, Wen-Chia TSAI, Yao-Tsung HO
  • Publication number: 20160067672
    Abstract: Disclosed is a method for preparing a granulated inorganic adsorbent for radionuclides including slurry forming, solidification, drying and hardening, granulation, and washing steps: blending a dihydrogen phosphate, a powdered inorganic adsorbent raw material and a setting time regulator in water to form a slurry; adding sintered magnesia into the slurry, and blending the mixture to form a solidified slurry; setting the solidified slurry on a disk member, and naturally drying to hardening in a specific temperature range to form a hardened solid material; smashing the hardened solid material and performing vibration sieving by using a screen to obtain a granulated inorganic adsorbent for radionuclides containing residual reagents; washing the granulated inorganic adsorbent for radionuclides containing residual reagents with water, to remove the residual reagents to complete preparation, where the adsorption capacity of the granulated inorganic adsorbent for radionuclides thus prepared is in the range of 0.
    Type: Application
    Filed: October 30, 2014
    Publication date: March 10, 2016
    Inventors: LI-CHING CHUANG, CHI-HUNG LIAO, JEN-CHIEH CHUNG, KOU-MIN LIN, SHENG-WEI CHIANG, KUANG-LI CHIEN, ZHE-CHENG HU, WEN-CHI TSAI
  • Publication number: 20150373832
    Abstract: A circuit-and-heat-dissipation assembly includes: a heat sink including a heat absorbing base and a heat dissipating element, the heat absorbing base having a circuit-forming surface and an element-forming surface, the heat dissipating element protruding from the element-forming surface for dissipating heat conducted from the heat absorbing base into an ambient environment; an insulator layer formed on the circuit-forming surface; and a patterned circuit formed on the insulator layer.
    Type: Application
    Filed: June 19, 2015
    Publication date: December 24, 2015
    Applicant: TAIWAN GREEN POINT ENTERPRISES CO., LTD.
    Inventors: Pen-Yi LIAO, Hung-San PAN, Yu-Cheng CHEN, Hui-Ching CHUANG, Wen-Chia TSAI
  • Publication number: 20150096793
    Abstract: A method for forming a graphene circuit pattern on an object includes the following steps of: forming a patterned graphene layer on a surface of a film so as to form a laminate; and covering an object with the laminate so as to attach the patterned graphene layer to the object.
    Type: Application
    Filed: September 23, 2014
    Publication date: April 9, 2015
    Inventors: Pen-Yi LIAO, Hui-Ching CHUANG, Wen-Chia TSAI
  • Patent number: 8937352
    Abstract: A layout pattern of an implant layer includes at least a linear region and at least a non-linear region. The linear region includes a plurality of first patterns to accommodate first dopants and the non-linear region includes a plurality of second patterns to accommodate the first dopants. The linear region abuts the non-linear region. Furthermore, a pattern density of the first patterns in the linear region is smaller than a pattern density of the second patterns in the non-linear region.
    Type: Grant
    Filed: February 17, 2014
    Date of Patent: January 20, 2015
    Assignee: United Microelectronics Corp.
    Inventors: Ming-Tsung Lee, Cheng-Hua Yang, Wen-Fang Lee, Chih-Chung Wang, Chih-Wei Hsu, Po-Ching Chuang
  • Publication number: 20150000596
    Abstract: The present invention discloses a MOCVD gas diffusion system with gas inlet baffles. With the adoption of multiple detachable air inlet baffles under the MO gas (Metal Organic gas) inlet and the hydride gas inlet, the gas diffusion system can easily and effectively reduce the pre-reaction of the MO gas and the hydride gas near the gas inlets, prevent metal diffusions around the inlets and make the metal layer generated on the wafers on the wafer carrier be very even, the MO gas used is also massively reduced to save great cost. The MOCVD process with the diffusion system of the present invention thus has a great potential in application to productions of high-performance LED epitaxy.
    Type: Application
    Filed: August 9, 2013
    Publication date: January 1, 2015
    Applicant: NATIONAL CENTRAL UNIVERSITY
    Inventors: Shu-San HSIAU, Chun-Chung Liao, Tzu-Ching Chuang, Jyh-Chen Chen
  • Publication number: 20140269130
    Abstract: Embodiments include systems, methods, and apparatuses for reading a data signal from a memory, such as a dynamic random access memory (DRAM). In one embodiment, a memory receiver may include a differential amplifier to receive a data signal from the memory and pass a differential output signal based on a voltage difference between the data signal and a reference voltage. The data signal may have a first direct current (DC) average voltage level, and the differential amplifier may shift the differential output signal to a second DC average voltage level that is substantially constant over a range of values of the first DC average voltage level. In another embodiment, a voltage offset compensation (VOC) circuit may apply a compensation voltage to the output signal that is based on an activated rank or an identity of the memory module. Other embodiments may be described and claimed.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Inventors: Moonkyun Maeng, Aaron Martin, Hsiao-Ching Chuang
  • Publication number: 20140159155
    Abstract: A layout pattern of an implant layer includes at least a linear region and at least a non-linear region. The linear region includes a plurality of first patterns to accommodate first dopants and the non-linear region includes a plurality of second patterns to accommodate the first dopants. The linear region abuts the non-linear region. Furthermore, a pattern density of the first patterns in the linear region is smaller than a pattern density of the second patterns in the non-linear region.
    Type: Application
    Filed: February 17, 2014
    Publication date: June 12, 2014
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Tsung Lee, Cheng-Hua Yang, Wen-Fang Lee, Chih-Chung Wang, Chih-Wei Hsu, Po-Ching Chuang
  • Patent number: 8741448
    Abstract: Disclosed is a fullerene derivative having a formula of F-Cy, wherein F is an open-cage fullerene, and Cy is a chalcogenyl group. The fullerene derivative can be applied to hydrogen storage material and an optoelectronic device such as an organic light emitting diode (OLED), a solar cell, or an organic thin film transistor (TFT).
    Type: Grant
    Filed: August 9, 2011
    Date of Patent: June 3, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Ping Chen, Yeu-Ding Chen, Shih-Ching Chuang, Yu-Wei Lin, Fu-Wei Chan
  • Patent number: 8692326
    Abstract: A layout pattern of a high voltage metal-oxide-semiconductor transistor device includes a first doped region having a first conductivity type, a second doped region having the first conductivity type, and an non-continuous doped region formed in between the first doped region and the second doped region. The non-continuous doped region includes a plurality of gaps formed therein. The non-continuous doped region further includes a second conductivity type complementary to the first conductivity type.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: April 8, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Ming-Tsung Lee, Cheng-Hua Yang, Wen-Fang Lee, Chih-Chung Wang, Chih-Wei Hsu, Po-Ching Chuang
  • Patent number: 8676023
    Abstract: The present invention discloses a method for fabricating polymeric wavelength filter based on an asymmetric Bragg coupler with single-grating waveguide. The asymmetric waveguide coupler is formed firstly on a negative photo-resist mold. PDMS film is injected into the narrow waveguide of the coupler to act as a protection layer. The gratings pattern is exposed on the alternative waveguide and subsequently transferred to PDMS stamp mold. The PDMS stamp mold is used as a stamp to transfer the gratings pattern of the ABC wavelength filter onto UV cured polymer to form the final ABC filter. Whereby, the fabrication process is reliable and accurate, and can offer great potential for mass production of the ABC filter with single-grating waveguide.
    Type: Grant
    Filed: November 18, 2011
    Date of Patent: March 18, 2014
    Assignee: National Formosa University
    Inventor: Wei-Ching Chuang
  • Patent number: 8561356
    Abstract: A panel assembly includes multiple base boards, multiple cover panels, multiple shelves and multiple accessories so as to be fixed to a wall. The multiple base boars and the multiple cover panels define a path, a space and a gap. The path, the space and the gap communicate with each other. Sand the shelves or the accessories are inserted into the path, the space and gap. The panel assembly can be quickly assembled and replaced to change the arrangements and suitable for decoration and display or storage.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: October 22, 2013
    Inventor: Ming-Ching Chuang
  • Publication number: 20130221438
    Abstract: A layout pattern of a high voltage metal-oxide-semiconductor transistor device includes a first doped region having a first conductivity type, a second doped region having the first conductivity type, and an non-continuous doped region formed in between the first doped region and the second doped region. The non-continuous doped region includes a plurality of gaps formed therein. The non-continuous doped region further includes a second conductivity type complementary to the first conductivity type.
    Type: Application
    Filed: February 28, 2012
    Publication date: August 29, 2013
    Inventors: Ming-Tsung Lee, Cheng-Hua Yang, Wen-Fang Lee, Chih-Chung Wang, Chih-Wei Hsu, Po-Ching Chuang
  • Publication number: 20130129934
    Abstract: The present invention discloses a method for fabricating polymeric wavelength filter based on an asymmetric Bragg coupler with single-grating waveguide. The asymmetric waveguide coupler is formed firstly on a negative photo-resist mold. PDMS film is injected into the narrow waveguide of the coupler to act as a protection layer. The gratings pattern is exposed on the alternative waveguide and subsequently transferred to PDMS stamp mold. The PDMS stamp mold is used as a stamp to transfer the gratings pattern of the ABC wavelength filter onto UV cured polymer to form the final ABC filter. Whereby, the fabrication process is reliable and accurate, and can offer great potential for mass production of the ABC filter with single-grating waveguide.
    Type: Application
    Filed: November 18, 2011
    Publication date: May 23, 2013
    Applicant: NATIONAL FORMOSA UNIVERSITY
    Inventor: WEI-CHING CHUANG
  • Publication number: 20130061868
    Abstract: A foldable floss pick includes a grip having a first connection section at one end and a floss arch having a second connection section rotatably connected to the first connection section of the grip. A dental floss is connected between two ends of the floss arch. The floss arch defines a virtual face. When not folded, the floss arch is positioned in a first relative position where the virtual face is substantially coplanar with the grip and the floss pick is in a straight form to facilitate package. In use, the floss arch is first folded toward the grip and fixed in a second relative position by means of a latch structure disposed between the grip and the floss arch. Then a user can conveniently use the folded floss pick to clean the teeth.
    Type: Application
    Filed: March 20, 2012
    Publication date: March 14, 2013
    Inventor: CHING-AN CHUANG
  • Patent number: 8396341
    Abstract: The present invention discloses a method for fabricating an optical filter based on polymer asymmetric bragg couplers using holographic interference techniques, soft lithography, and micro molding, which comprises following steps: prepare a UV polymer with gratings; coating photo-resister film on the UV polymer, and exposed by UV light to obtain a photo-resister mold with two grooves each having gratings; coating diluted PDMS film on the photo-resister mold, and baking the PDMS film to obtain a PDMS mold having two waveguides with gratings; placing glass substrate over the PDMS mold to form a first tunnel; injecting a precure UV polymer into the first tunnel to from a cladding layer with two grooves having gratings pattern at its bottom; placing glass slide over the cladding layer and injecting a mixed UV polymer into the grooves to form waveguide cores; placing a second glass substrate over the cladding layer, and injecting UV polymer to form an upper cladding layer laminated with the cladding layer to obtai
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: March 12, 2013
    Assignee: China University of Science and Technology
    Inventors: Kun-Yi Lee, Wei-Ching Chuang, Cheng-Che Lee, Wei-Yu Lee
  • Publication number: 20120305919
    Abstract: Disclosed is a fullerene derivative having a formula of F-Cy, wherein F is an open-cage fullerene, and Cy is a chalcogenyl group. The fullerene derivative can be applied to hydrogen storage material and an optoelectronic device such as an organic light emitting diode (OLED), a solar cell, or an organic thin film transistor (TFT).
    Type: Application
    Filed: August 9, 2011
    Publication date: December 6, 2012
    Inventors: Chih-Ping CHEN, Yeu-Ding Chen, Shih-Ching Chuang, Yu-Wei Lin, Fu-Wei Chan
  • Publication number: 20120176565
    Abstract: An LED lamp tube includes a plurality of primary light emitting units connected in series. Each of the primary light emitting units includes a plurality of light emitting sub-units connected in parallel. Each of the light emitting sub-units includes at least one light emitting diode. A liquid crystal display device includes the LED lamp tube, a drive circuit, an optical module and a liquid crystal layer.
    Type: Application
    Filed: January 10, 2012
    Publication date: July 12, 2012
    Applicant: TPV ELECTRONICS (FUJIAN) CO., LTD.
    Inventors: Zuo-Shang YU, Jin-Ching Chuang
  • Patent number: 8182219
    Abstract: The present invention provides a fan including a stator and a rotor coupled to the stator. The stator has a base and a bearing disposed inside the base. The rotor has a shaft supported by the bearing. Furthermore, the shaft has a concave structure formed on a surface thereof, or the bearing has a groove structure formed on a surface thereof.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: May 22, 2012
    Assignee: Delta Electronics, Inc.
    Inventors: Ah-Yee Shu, Hao-Ming Chen, Chui-Hsien Chiu, Chi-Hao Hsieh, Ching-Chuang Mai
  • Patent number: D754121
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: April 19, 2016
    Assignee: QUANTA COMPUTER INC.
    Inventors: Pu-Ching Chuang, Chang-Ta Miao, Gwo-Chyuan Chen, Chih-Kang Ting