Abstract: A lithographic process will use a mask or photomask. The photomask includes a first material layer, the first material layer providing a first outer surface of the photomask. The photomask also includes a second material layer over the first material layer, the second material layer providing a second outer surface of the photomask. The two outer surfaces are substantially in parallel and a distance between the two outer surfaces along a first axis perpendicular to the two outer surfaces defines a thickness of the photomask. Also, the two outer surfaces are connected by a plurality of sides, at least one of the sides is not perpendicular to the two outer surfaces and the at least one of the sides provides substantial area for holding the lithographic photomask.

Abstract: Provided is an integrated circuit (IC) fabrication method. The method includes receiving a mask, the mask having a plurality of dies and receiving a wafer, the wafer having a resist layer. The method further includes exposing the resist layer using the mask with a fraction radiation dose thereby forming a first plurality of images; re-positioning the mask relative to the wafer; and exposing the resist layer using the mask with another fraction radiation dose. A second plurality of images is formed, wherein a portion of the second plurality of images is superimposed over another portion of the first plurality of images.

Abstract: A lithographic process will use a mask or photomask. The photomask includes a first material layer, the first material layer providing a first outer surface of the photomask. The photomask also includes a second material layer over the first material layer, the second material layer providing a second outer surface of the photomask. The two outer surfaces are substantially in parallel and a distance between the two outer surfaces along a first axis perpendicular to the two outer surfaces defines a thickness of the photomask. Also, the two outer surfaces are connected by a plurality of sides, at least one of the sides is not perpendicular to the two outer surfaces and the at least one of the sides provides substantial area for holding the lithographic photomask.

Abstract: Provided is an integrated circuit (IC) fabrication method. The method includes receiving a mask, the mask having a plurality of dies and receiving a wafer, the wafer having a resist layer. The method further includes exposing the resist layer using the mask with a fraction radiation dose thereby forming a first plurality of images; re-positioning the mask relative to the wafer; and exposing the resist layer using the mask with another fraction radiation dose. A second plurality of images is formed, wherein a portion of the second plurality of images is superimposed over another portion of the first plurality of images.

Abstract: Provided is an integrated circuit (IC) fabrication method. The method includes receiving a mask, the mask having a plurality of dies and receiving a wafer, the wafer having a resist layer. The method further includes exposing the resist layer using the mask with a fraction radiation dose thereby forming a first plurality of images; re-positioning the mask relative to the wafer; and exposing the resist layer using the mask with another fraction radiation dose. A second plurality of images is formed, wherein a portion of the second plurality of images is superimposed over another portion of the first plurality of images.

Abstract: An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.

Abstract: A method of identifying defects including producing, with an imaging system, an original image of a fabricated article having a feature thereon, the feature having an intended height and extracting a contour image from the original image, the contour image having an outline of those portions of the feature having a height approximate to the intended height. The method also includes producing a simulated image of the article based upon the contour and creating a defect image based on the differences between the simulated image and the original image, the defect image including any portions of the feature having a height less than the intended height.

Abstract: An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.

Abstract: A method of inspecting fabricated articles includes receiving a fabricated article to be inspected for defects, the fabricated article having a pattern thereon, and the pattern being based on a pattern design and creating a rule set for defining critical regions of the pattern as represented in the pattern design, the critical regions being regions in which defects are more likely to be found during inspection. The method also includes applying the rule set to the pattern design to identify a critical region of the pattern on the fabricated article and a non-critical region of the pattern on the fabricated article. Further, the method includes inspecting the non-critical region of the pattern on the fabricated article for defects at first resolution and inspecting the critical region of the pattern on the fabricated article for defects at a second resolution higher than the first resolution.

Abstract: A method of identifying defects including producing, with an imaging system, an original image of a fabricated article having a feature thereon, the feature having an intended height and extracting a contour image from the original image, the contour image having an outline of those portions of the feature having a height approximate to the intended height. The method also includes producing a simulated image of the article based upon the contour and creating a defect image based on the differences between the simulated image and the original image, the defect image including any portions of the feature having a height less than the intended height.

Abstract: An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.

Abstract: The a polarized high-order mode electromagnetic wave converter and its coupling method, uses bifurcate structure to divide the input wave into two signals with the same amplitude but opposition phases, which are then inputted into a circular main waveguide through waveguide so that the input wave could convert into linearly polarized high-order mode in the main waveguide, and then undergo the polarization change conversion stage to convert the polarized wave into circularly polarized wave. The coupling method includes the electromagnetic wave bifurcate stage, mode conversion stage, and may combine with a polarization conversion stage. The TE21 coupler is tested with simulation computation and fabricated, and proved to product consistent results with the computer simulation. The coupler has features of high conversion efficiency, high mode purity, wide bandwidth, polarity control, and convenience in processing.

Abstract: A quasi-optical material treatment apparatus includes a first mirror and a second mirror. The first mirror is arched, and has a focal point in a chamber distance, and a coupling port to receive a high power microwave from an external microwave source that travels along the chamber distance to output a strong field microwave beam. The second mirror and the first mirror jointly form a quasi-optical action chamber and are movable relative to each other to adjust the total chamber distance between the two. A material to be treated may be moved through a focusing zone (about one wavelength of the strong field microwave beam) of the strong field microwave beam to be treated rapidly and evenly.

Abstract: The high order mode electromagnetic wave coupler and coupling method uses one or more Y-shaped bifurcated waveguides to divide the wave to one or more order, so as to divide the target electromagnetic wave proportionally into equal shares. The waveguide is used to inject the electromagnetic wave to a main waveguide, so that the electromagnetic wave is converted into high order mode in the main waveguide. For example, a rectangular waveguide TE10 mode can be converted to a circular TE01 mode, wherein this conversion can also be applied to higher order modes and microwave guide-shaped modes. The coupling method includes a electromagnetic wave power dividing section and mode converting section, of which the power divider and dividing method can divide the electromagnetic wave proportionally. The coupler and coupling method feature high converting efficiency, high mode purity, high bandwidth, and convenient operation.

Abstract: The high order mode electromagnetic wave coupler and coupling method uses one or more Y-shaped bifurcated waveguides to divide the wave to one or more order, so as to divide the target electromagnetic wave proportionally into equal shares. The waveguide is used to inject the electromagnetic wave to a main waveguide, so that the electromagnetic wave is converted into high order mode in the main waveguide. For example, a rectangular waveguide TE10 mode can be converted to a circular TE01 mode, wherein this conversion can also be applied to higher order modes and microwave guide-shaped modes. The coupling method includes a electromagnetic wave power dividing section and mode converting section, of which the power divider and dividing method can divide the electromagnetic wave proportionally. The coupler and coupling method feature high converting efficiency, high mode purity, high bandwidth, and convenient operation.

Abstract: The a polarized high-order mode electromagnetic wave converter and its coupling method uses bifurcate structure to divide the input wave into two signals with the same amplitude but opposition phases, which are then inputted into a circular main waveguide through waveguide so that the input wave could convert into linearly polarized high-order mode in the main waveguide, and then undergo the polarization change conversion stage to convert the polarized wave into circularly polarized wave. The coupling method includes the electromagnetic wave bifurcate stage, mode conversion stage, and may combine with a polarization conversion stage. The TE21 coupler is tested with simulation computation and fabricated, and proved to produce consistent results with the computer simulation. The coupler has features of high conversion efficiency, high mode purity, wide bandwidth, polarity control, and convenience in processing.

Abstract: A quasi-optical material treatment apparatus includes a first mirror and a second mirror. The first mirror is arched, and has a focal point in a chamber distance, and a coupling port to receive a high power microwave from an external microwave source that travels along the chamber distance to output a strong field microwave beam. The second mirror and the first mirror jointly form a quasi-optical action chamber and are movable relative to each other to adjust the total chamber distance between the two. A material to be treated may be moved through a focusing zone (about one wavelength of the strong field microwave beam) of the strong field microwave beam to be treated rapidly and evenly.