Abstract: A mounting apparatus is used to mount a hard disk drive to a storage rack. The mounting apparatus includes a supporting frame and two grounding members. The supporting frame includes a handle, and two side brackets extending from opposite ends of the handle, and attached to opposite sides of the hard disk drive. Each grounding member is made of resilient and conductive material, and includes a mounting plate mounted to the side bracket, and two abutting plates extending out from two opposite ends of the mounting plate. A part of each abutting plate is exposed out of the corresponding side bracket. when the mounting apparatus mounting the hard disk drive in a storage rack, the abutting plates are sandwiched between the storage rack and the hard disk drive.

Abstract: A supporting frame is used to mount a hard disk drive to a storage rack. The storage rack forms two protrusions protruding inwards from opposite sides of the storage rack. The supporting frame includes a handle and two side brackets resiliently connected to the handle. The side brackets are fixedly attached to opposite sides of the hard disk drive. The handle defines two locking holes. The protrusions of the storage rack are respectively engaged in the locking holes. When the handle is moved away from the hard disk drive, the handle is deformed to disengage the protrusions of the storage rack from the locking holes of the handle.

Abstract: A supporting frame is used to mount a hard disk drive to a storage rack. The storage rack forms two protrusions protruding inwards from opposite sides of the storage rack. The supporting frame includes a handle and two side brackets resiliently connected to the handle. The side brackets are fixedly attached to opposite sides of the hard disk drive. The handle defines two locking holes. The protrusions of the storage rack are respectively engaged in the locking holes. When the handle is moved away from the hard disk drive, the handle is deformed to disengage the protrusions of the storage rack from the locking holes of the handle.

Abstract: A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

Abstract: A computer-implemented method of providing seamless online video advertisements includes rendering a video advertisement on a first web page in a first tab. The computer-implemented method also includes recording current time of play constantly during the rendering of the video advertisement and receiving a request for a second web page in the first tab from the user. Further, the computer-implemented method includes unloading the first web page and loading the second web page in the first tab. Moreover, the computer-implemented method includes retrieving current time of play stored corresponding to the unloading and resume the rendering the video advertisement on the second web page based on the current time of play retrieved.

Abstract: A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

Abstract: A magnetic shift register memory in stack structure includes magnetic shift registering layers for forming an unit of stack structure. Each registering layer has multiple magnetic domains and each domain has a magnetization direction corresponding to a stored data. The two adjacent magnetic shift registering layers respectively have an upper magnetic domain and a lower magnetic domain forming a coupling region. By a coupling structure, the lower magnetic domain and the upper magnetic domain have the same stored data. A driving current unit is coupled to the magnetic shift registering layers for respectively providing a driving current in a predetermined direction to the magnetic shift registering layers. As a result, the stored data in the magnetic domains of the magnetic shift registering layers is shifted in a direction from a foremost registering layer to a last registering layer of the magnetic shift registering layers via the coupling structure.

Abstract: A magnetic shift register including at least one magnetic track is provided. Each magnetic track has at least one set of burst data formed by a plurality of consecutive magnetic domains. Each magnetic domain has a magnetization direction corresponding to a stored data. A head magnetic domain having a given magnetization direction corresponding to a given stored data is set at a most front of the set of burst data, and the head magnetic domain and the set of burst data form a data storage unit. A method for reading a magnetic shift register is provided.

Abstract: A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.

Abstract: A magnetic memory structure includes a memory track which has consecutive magnetic domains. Each of the magnetic domains has memory capacity of one bit. A first domain-wall injecting layer intersects and connects a terminal of the memory track and constantly stores a first binary data. A second domain-wall injecting layer against the first domain-wall injecting layer intersects and connects the terminal of the memory track and constantly stores a second binary data different from the first binary data. The memory track and one of the first domain-wall injecting layer and the second domain-wall injecting layer together form a domain wall.

Abstract: A magnetic memory, a driving method thereof, and a manufacturing method thereof are provided. The magnetic memory includes a plurality of lead structures, a plurality of first magnetic metal structures, a second magnetic metal structure, and an insulation layer. Each of the first magnetic metal structures is disposed between adjacent two of the lead structures, and the second magnetic metal structure spans over the lead structures. A structure composed of the first magnetic metal structures and the second magnetic metal structure includes a plurality of magnetic memory cells connected with each other. Each of the magnetic memory cells has a magnetic domain and a domain wall adjacent to the magnetic domain, wherein the magnetic domain is suitable for storing a bit data.

Abstract: A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.

Abstract: A magnetic memory structure includes a memory track which has consecutive magnetic domains. Each of the magnetic domains has memory capacity of one bit. A first domain-wall injecting layer intersects and connects a terminal of the memory track and constantly stores a first binary data. A second domain-wall injecting layer against the first domain-wall injecting layer intersects and connects the terminal of the memory track and constantly stores a second binary data different from the first binary data. The memory track and one of the first domain-wall injecting layer and the second domain-wall injecting layer together form a domain wall.

Abstract: A magnetic shift register memory in stack structure includes magnetic shift registering layers for forming an unit of stack structure. Each registering layer has multiple magnetic domains and each domain has a magnetization direction corresponding to a stored data. The two adjacent magnetic shift registering layers respectively have an upper magnetic domain and a lower magnetic domain forming a coupling region. By a coupling structure, the lower magnetic domain and the upper magnetic domain have the same stored data. A driving current unit is coupled to the magnetic shift registering layers for respectively providing a driving current in a predetermined direction to the magnetic shift registering layers. As a result, the stored data in the magnetic domains of the magnetic shift registering layers is shifted in a direction from a foremost registering layer to a last registering layer of the magnetic shift registering layers via the coupling structure.

Abstract: A magnetic shift register including at least one magnetic track is provided. Each magnetic track has at least one set of burst data formed by a plurality of consecutive magnetic domains. Each magnetic domain has a magnetization direction corresponding to a stored data. A head magnetic domain having a given magnetization direction corresponding to a given stored data is set at a most front of the set of burst data, and the head magnetic domain and the set of burst data form a data storage unit. A method for reading a magnetic shift register is provided.

Abstract: A magnetic memory, a driving method thereof, and a manufacturing method thereof are provided. The magnetic memory includes a plurality of lead structures, a plurality of first magnetic metal structures, a second magnetic metal structure, and an insulation layer. Each of the first magnetic metal structures is disposed between adjacent two of the lead structures, and the second magnetic metal structure spans over the lead structures. A structure composed of the first magnetic metal structures and the second magnetic metal structure includes a plurality of magnetic memory cells connected with each other. Each of the magnetic memory cells has a magnetic domain and a domain wall adjacent to the magnetic domain, wherein the magnetic domain is suitable for storing a bit data.

Abstract: A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.

Abstract: A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.

Abstract: A method for read/write data onto a recording medium by using a nano-tip array and a data storage device incorporating the nano-tip array. The nano-tip array is fabricated on a silicon on insulator wafer to form a multiplicity of silicon micro-tips first by a MEMS technique, followed by forming integrally on each one of the multiplicity of silicon micro-tips at least one carbon nanotube extending outwardly away from the one micro-tip. The data storage device further includes an anode with a multiplicity of apertures therein with each apertures corresponding to one of the multiplicity of silicon micro-tips, and a recording medium that has an active surface positioned immediately adjacent to the multiplicity of silicon micro-tips.

Abstract: An adjusting mechanism of the guide rod of the optical pick-up in an optical disk drive, including an optical disk drive chassis, an elastic fixture of the optical pick-up module, a substrate of the optical pick-up module, the guide rods of the optical pick-up, and adjusting screws, wherein the substrate of the optical pick-up module is fixed on the optical disk drive chassis by the elastic fixture of the optical pick-up module, and the vibration can be released by virtue of the elasticity, and to provide the fixture of the guide rod of the optical pick-up. Therefore, the incident angle of the laser beam can be adjusted by adjusting the screws to eliminate deviation of the incident angle due to the error of manufacture, then the number of part can be reduce, and the assembly process can be simplified, so the added value can be promoted.