Abstract: The present invention provides a terminal electrical connector, which includes a terminal unit and a rotating cap. The terminal unit includes a terminal unit body, one or a plurality of electrical terminals provided inside the terminal unit body, and a torsion spring positioned on the terminal unit body. A limiting groove for limiting a pivotal stroke and a first positioning groove for positioning a first end of the torsion spring are provided on an outer peripheral side of the terminal unit body. The rotating cap includes a cap body, and one or a plurality of locking blocks provided on the cap body for locking on another terminal electrical connector. A sliding block and a second positioning groove are provided on an inner circumference of the cap body. The sliding block is used for limiting the pivotal stroke of the rotating cap relative to the terminal unit body, and the torsion spring is used for inertially returning the rotating cap to a position of a reset angle relative to the terminal unit body.

Abstract: An optical element includes a waveguide substrate, first and second optical film structures, and a sub-wavelength nanostructure. The waveguide substrate has first and second sides, a light entering surface and a light exiting surface. An image beam can enter the interior of the waveguide substrate through the light entering surface and travel in a manner of total internal reflection. The image beam exits the waveguide substrate via the light exiting surface after one or more reflections. The first and second optical film structures are respectively arranged on the first and second sides. The sub-wavelength nanostructure arranged on the first side can receive and diffract the image beam to couple the image beam to the waveguide substrate. The first and second optical film structures can reflect the part of the image beam at the incident angle smaller than the critical angle of the waveguide substrate.

Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor fin on a substrate. A dummy gate structure is formed crossing the semiconductor fin. The dummy gate structure is replaced with a metal gate structure. An epitaxial structure is formed in the semiconductor fin after replacing the dummy gate structure with the metal gate structure.

Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor fin on a substrate. A dummy gate structure is formed crossing the semiconductor fin. The dummy gate structure is replaced with a metal gate structure. An epitaxial structure is formed in the semiconductor fin after replacing the dummy gate structure with the metal gate structure.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor fin, a first gate stack, and a first metal element-containing dielectric mask. The semiconductor fin protrudes from the substrate. The first gate stack is over the semiconductor fin. The first metal element-containing dielectric mask is over the first gate stack.

Abstract: A lens structure, adapted to be optically coupled to a light source, is provided, including a first surface, a second surface, and a light output surface. The first surface includes a convex surface protruding toward the light source. The second surface is opposite the first surface. The light output surface connects the first surface and the second surface. A lamp, a backlight module, and a display device including the lens structure are also provided.

Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

Abstract: An epitaxial wafer as a light emitting diode (LED) comprises a sapphire substrate, a buffer layer, an N-type semiconductor layer, a light emitting active layer, and a P type semiconductor layer. The buffer layer, the N-type semiconductor layer, the light emitting active layer, and the P type semiconductor layer are formed on C-plane of the sapphire substrate in that order. The light-emitting active layer comprises at least one quantum well structure, with a quantum well region, a gradient region, a high-content aluminum region, and a blocking region. The blocking region covers and is connected to the high-content aluminum region, the P-type semiconductor layer of aluminum-doped or indium-doped gallium nitride covers the gradient region. Content of aluminum or indium changes linearly from side close to the N-type semiconductor layer to side furthest from the N-type semiconductor layer.

Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor fin, a first gate stack, and a first metal element-containing dielectric mask. The semiconductor fin protrudes from the substrate. The first gate stack is over the semiconductor fin. The first metal element-containing dielectric mask is over the first gate stack.

Abstract: The present invention provides a piercing-through structure for a connector, comprising a hollow-core body, a lead, and a receptacle. Wherein a front connection portion is disposed at a front end of the hollow-core body; a plurality of wires extending forward is disposed at a front end of the lead disposed at a rear segment in the hollow-core body; and a plurality of metallic spikes is disposed at a front end of the connector of the receptacle and a connection sleeve movably fits around a front end of the body. So that connecting the hollow-core body and the receptacle together enables the connection sleeve of the receptacle to fit around the front connection portion of the hollow-core body, allowing the metallic spikes to pierce across surfaces of the wires such that, after piercing insulating sheaths of the wires, the metallic spikes come into contact with metallic cores of the wires, so as to achieve electrical connection of the connector of the receptacle and the wires of the hollow-core body.

Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.

Abstract: A projector includes a laser module for generating a laser beam and a wafer-level optics. The wafer-level optics includes a first substrate, a first collimator lens and a diffractive optical element, wherein the first collimator lens is manufactured on a first surface of the first substrate, and is arranged for receiving the laser beam from the laser module to generate a collimated laser beam; and the collimated laser beam directly passes through the diffractive optical element to generate a projected image of the projector.

Abstract: A method for manufacturing a semiconductor device, including forming a dummy gate structure on a substrate, in which the substrate has a source/drain portion and a channel portion adjacent to the source/drain region, and the dummy gate structure is formed on the channel portion of the substrate; recessing at least a part of the source/drain portion to form a recess in the source/drain portion of the substrate; forming a stress material in the recess; replacing the dummy gate structure with a gate stack; removing the stress material in the recess after the replacing the dummy gate structure with the gate stack; and forming an epitaxy structure in the recess.

Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.