Abstract: A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color.

Abstract: An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions on a surface thereof. The nanospheres are located on the protrusions and covered by the second buffer layer and located in the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

Abstract: An epitaxial substrate for growing a lighting emitting structure of a light emitting diode, includes a transparent base, a first buffer layer and a second buffer layer formed on the transparent base. The transparent base includes a first surface and a second surface opposite to the first surface. Plural protrusions are formed on the first surface of the transparent base. Each first buffer layer is formed on the outer surfaces of the plural protrusions. The second buffer layer fills in the recesses defined between two adjacent protrusions, and covers the first buffer layer. The refractive index of the first buffer layer is larger than that of the transparent base, and is less than that of the second buffer layer. This disclosure also relates a method for manufacturing the epitaxial substrate and a light emitting diode having the same.

Abstract: An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, the second semiconductor layer and the transparent conductive layer are successively formed on the substrate. The first electrode and the second electrode respectively is formed on the first semiconductor layer and the transparent conductive layer. A plurality of grooves defined on the first semiconductor layer, and a plurality of hole groups defined on the second semiconductor layer. The present disclosure also provides a method of manufacturing the LED die.

Abstract: A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.

Abstract: A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.

Abstract: A flip-chip light emitting diode, including a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer series mounted along a height direction of the flip-chip light emitting diode. A P electrode is formed on the P-type semiconductor layer and an N electrode is formed on the N-type semiconductor. A top surface of the substrate is away from the light emitting layer. A plurality of micron main portions is formed on the top surface. An outer surface of each main body has a plurality of nanometer protrusions. A method for manufacturing the flip chip light emitting diode is also provided.

Abstract: A light emitting diode includes a substrate, an un-doped GaN layer, a plurality of carbon nanotubes, an N-type GaN layer, an active layer formed on the N-type GaN layer, and a P-type GaN layer formed on the active layer. The substrate includes a first surface and a second surface opposite and parallel to the first surface. A plurality of convexes is formed on the first surface of the substrate. The un-doped GaN layer is formed on the first surface of the substrate. The plurality of carbon nanotubes is formed on an upper surface of the un-doped GaN layer. The plurality of carbon nanotubes is spaced from each other to expose a portion of the upper surface of the un-doped GaN layer. The N-type GaN layer is formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein.

Abstract: A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the N-type semiconductor. A method for manufacturing the chip is also disclosed. The compensation layer is made of a compound having a composition of AlxGa1-xN.

Abstract: An LED package includes a substrate, a buffer layer formed on the substrate, an epitaxial structure formed on the buffer layer, and a plurality of carbon nanotube bundles formed in the epitaxial structure.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided.

Abstract: An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided.

Abstract: A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.

Abstract: An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions on a surface thereof. The nanospheres are located on the protrusions and covered by the second buffer layer and located in the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

Abstract: A light emitting diode includes a substrate, an un-doped GaN layer, a plurality of carbon nanotubes, an N-type GaN layer, an active layer formed on the N-type GaN layer, and a P-type GaN layer formed on the active layer. The substrate includes a first surface and a second surface opposite and parallel to the first surface. A plurality of convexes is formed on the first surface of the substrate. The un-doped GaN layer is formed on the first surface of the substrate. The plurality of carbon nanotubes is formed on an upper surface of the un-doped GaN layer. The plurality of carbon nanotubes is spaced from each other to expose a portion of the upper surface of the un-doped GaN layer. The N-type GaN layer is formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein.

Abstract: An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions formed on a surface thereof. The nanospheres are located on the first buffer layer formed on the protrusions and covered by the second buffer layer. The present disclosure also provides a method of manufacturing an LED die.

Abstract: An LED includes a substrate and a semiconductor structure mounted on the substrate. A plurality of first holes and a plurality of second holes are defined in the semiconductor structure. The second holes are located above the first holes and communicate with the first holes. A method for manufacturing the LED is also provided.

Abstract: A method for fabricating a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure is provided. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure has a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure. A nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. Lateral epitaxial growth is used to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency.

Abstract: An exemplary method for manufacturing a light emitting diode includes following steps: providing a substrate; growing an undoped GaN layer on the substrate, the undoped GaN layer comprising an upper surface away from the substrate and a lower surface contacting the substrate; etching the upper surface of the undoped GaN layer to form a plurality of cavities; growing an Distributed Bragg Reflector layer on the upper surface of the undoped GaN layer; and forming sequentially an N-type GaN layer, an active layer and a P-type GaN layer on the Distributed Bragg Reflector layer.