Abstract: The availability of relevant business resources, or supply, during a global crisis or disruption are estimated by using a forecast of a baseline supply of human resources and various forms of infrastructure and raw materials for a firm as input. That forecast is corrected to account for the impact of a crisis or other disruption, and a corrected forecast as output is provided. The corrected forecast reflects changes in the availability of business resources due to the crisis or disruption, dependencies between resources, as well as any mitigating effects resulting from the implementation of mitigation policies.

Abstract: Market demand is estimated for a firm under crisis, beginning with an operational demand forecast of a firm as input, correcting that forecast to account for the impact of a pandemic or other extraordinary market-disrupting circumstance, and providing a corrected operational demand forecast as output. The correction to account for the impact of an extraordinary market-disrupting circumstance is based on an estimated economic impact of the disruption and an estimated reduction of the firm's sales force attributable to the disruption.

Abstract: A system (and method) for allocating a contact to a vendor includes determining a real-time allocation of contact based upon one of a client-to-service provider payment structure, a service provider-to-vendor payment structure, and a real-time client contact handling demand.

Abstract: A method (and system) for contact center management contract evaluation including determining a potential profitability/risk for contact center management based upon a proposed contract term between one of a client and a service provider, and a service provider and a vendor.

Abstract: The present invention provides a method and system making it possible to reduce a description of the impact of a disaster on the world at large to measurable, firm-specific operational and financial implications. This makes it possible to bridge the divide between disaster prediction and business planning by facilitating the translation of physical and other effects of a disaster on a business into a dollars-and-cents impact. The present invention also allows a user to evaluate the costs and benefits of various disaster mitigation plans and/or policies and to understand the combined effects of multiple mitigation plans.

Abstract: A method (and system) for allocating contacts to a vendor including determining an allocation of contacts to a vendor based upon one of a client to service provider payment structure, a service provider to vendor payment structure, and a client contact handling demand.

Abstract: The availability of relevant business resources, or supply, during a global crisis or disruption are estimated by using a forecast of a baseline supply of human resources and various forms of infrastructure and raw materials for a firm as input. That forecast is corrected to account for the impact of a crisis or other disruption, and a corrected forecast as output is provided. The corrected forecast reflects changes in the availability of business resources due to the crisis or disruption, dependencies between resources, as well as any mitigating effects resulting from the implementation of mitigation policies.

Abstract: First, a substrate having at least a conducting layer is provided. Then, a CVD process is performed to form the Ti/TiN barrier layer onto the conducting layer. An examination procedure is followed, and if particles are detected in the Ti/TiN barrier layer, then a rework procedure is performed to remove the Ti/TiN barrier layer and to reform a new Ti/TiN barrier layer.

Abstract: A method for forming a titanium nitride layer. A pre-heating step is performed, wherein a substrate is placed in a chamber comprising inert gas with a pre-heating pressure between 0.1˜3 torr. A TiN deposition step is then performed, wherein the substrate is placed in a reactive gas at least comprising NH3 and TiCl4, and the first TiN deposition step has a reactive pressure of more than 5 torr and a reactive temperature of more than 500° C.

Abstract: A method of stabilizing the properties of a material layer is disclosed. A plurality of wafers are stored in a FOUP and in sequence the wafers are transferred to a chamber to proceed with deposition of a material layer and to the FOUP filled with a specific gas after deposition until all the wafers in the FOUP are treated. In the process of deposition, the wafers deposited with material layers on their surfaces are stored in the FOUP filled with specific gas. Therefore, the surface properties of all the wafers in the FOUP are stablilized and contamination due to outgassing is prevented.

Abstract: First, a substrate having at least a conducting layer is provided. Then, a CVD process is performed to form the Ti/TiN barrier layer onto the conducting layer. An examination procedure is followed, and if particles are detected in the Ti/TiN barrier layer, then a rework procedure is performed to remove the Ti/TiN barrier layer and to reform a new Ti/TiN barrier layer.

Abstract: A method for forming a titanium nitride layer. The method includes the steps of exposing a semiconductor substrate to a reactive gas containing TiCl4 and NH3 for a first deposition to form a layer of titanium nitride on the substrate, at reaction pressure less than 1 torr and temperature less than 500° C.; placing the semiconductor substrate in NH3 gas for a first annealing step, at pressure between 1 and 3 torr; exposing the semiconductor substrate to a reactive gas comprising TiCl4 and NH3 for a second deposition, at pressure exceeding 5 torr and temperature exceeding 500° C.; and subjecting the semiconductor substrate to a second annealing step in NH3 gas, at pressure exceeding 5 torr.

Abstract: A method for forming a titanium nitride layer. A pre-heating step is performed, wherein a substrate is placed in a chamber comprising inert gas with a pre-heating pressure between 0.1˜3 torr. A TiN deposition step is then performed, wherein the substrate is placed in a reactive gas at least comprising NH3 and TiCl4, and the first TiN deposition step has a reactive pressure of more than 5 torr and a reactive temperature of more than 500° C.

Abstract: A method of stabilizing the properties of a material layer is disclosed. A plurality of wafers are stored in a FOUP and in sequence the wafers are transferred to a chamber to proceed with deposition of a material layer and to the FOUP filled with a specific gas after deposition until all the wafers in the FOUP are treated. In the process of deposition, the wafers deposited with material layers on their surfaces are stored in the FOUP filled with specific gas. Therefore, the surface properties of all the wafers in the FOUP are stablilized and contamination due to outgassing is prevented.

Abstract: A method for forming a titanium nitride layer. The method includes the steps of exposing a semiconductor substrate to a reactive gas containing TiCl4 and NH3 for a first deposition to form a layer of titanium nitride on the substrate, at reaction pressure less than 1 torr and temperature less than 500° C.; placing the semiconductor substrate in NH3 gas for a first annealing step, at pressure between 1 and 3 torr; exposing the semiconductor substrate to a reactive gas comprising TiCl4 and NH3 for a second deposition, at pressure exceeding 5 torr and temperature exceeding 500° C.; and subjecting the semiconductor substrate to a second annealing step in NH3 gas, at pressure exceeding 5 torr.

Abstract: The invention provides an apparatus for testing input/output (I/O) interface in a computer system. The apparatus is capable of testing the I/O interface under real distance condition. The apparatus communicates with a first I/O interface in the computer system via a signal medium. The test apparatus includes a memory means, a clock generator for outputting a clock signal, an I/O interface communicating with the first I/O interface in the computer system via the signal medium, and a controller connected to the I/O interface. The controller operates synchronously with the clock signal for writing data transmitted from the I/O interface into the memory means, or reading out the data from the memory means and then transmitting the data to the first I/O interface through the I/O interface when a predetermined condition becomes effective.

Abstract: A toothpaste discharger comprises a container having a projected mouth at the lower portion and a socket behind the mouth, the socket being bored two holes at two side walls of the socket and an aperture at the top wall thereof, a washer inserted within the container, the washer being provided with an aperture approximately at the center thereof, and a driving means comprising a driving arm, a toothbrush receiving portion integrally under the driving arm, a pin at the top of the driving arm the pin extending with two flanges thereof within two holes of the socket, an elastic connecting portion in front of the pin, a driving rod connected onto the elastic connecting portion by means of a plug to extend into the container, a resilient element behind the pin to bias against the back portion of the socket, and a tongue portion pivoted on the driving arm to close the projected mouth in normal position.