Abstract: A testing device includes a switch, a sensing circuit, and a control circuit. The switch is coupled to a power supply circuit, and the power supply circuit is configured to output a supply voltage to a device under-test via the switch. The sensing circuit is coupled to the device under-test, and the sensing circuit is configured to receive an input voltage from the device under-test and to output a sensing signal according to the input voltage. The control circuit is coupled to the sensing circuit, the power supply circuit, and the switch. The control circuit is configured to control the power supply circuit to stop outputting the supply voltage at a first time and to turn off the switch at a second time according to the sensing signal.

Abstract: A testing device includes a switch, a sensing circuit, and a control circuit. The switch is coupled to a power supply circuit, and the power supply circuit is configured to output a supply voltage to a device under-test via the switch. The sensing circuit is coupled to the device under-test, and the sensing circuit is configured to receive an input voltage from the device under-test and to output a sensing signal according to the input voltage. The control circuit is coupled to the sensing circuit, the power supply circuit, and the switch. The control circuit is configured to control the power supply circuit to stop outputting the supply voltage at a first time and to turn off the switch at a second time according to the sensing signal.

Abstract: A semiconductor device includes a substrate having a source feature and a drain feature therein configured to enhance charge mobility, a gate stack directly over a portion of the source feature and a portion of the drain feature, a first salicide layer over substantially the entire source feature exposed by the gate stack, and a second salicide layer over substantially the entire drain feature exposed by the gate stack. The first salicide layer has a germanium concentration greater than about 0% by weight and less than about 3% by weight. The second salicide layer has a germanium concentration greater than about 0% by weight and less than about 3% by weight.

Abstract: A method of forming a semiconductor device includes forming a gate stack over a first portion of a source and a first portion of a drain. The method includes depositing a first cap layer comprising silicon over a second portion of the source and depositing a second cap layer comprising silicon over a second portion of the drain. The method includes depositing a metal layer over the gate stack, the first cap layer and the second cap layer. The method includes annealing the semiconductor device until all of the silicon in the first and second cap layers reacts with metal from the metal layer, wherein the annealing causes metal from the metal layer to react with silicon in the first cap layer, the second cap layer, the source, and the drain. Annealing the semiconductor device includes forming a salicide layer having a germanium concentration less than 3% by weight.

Abstract: A semiconductor device includes a substrate and a through substrate via structure. The substrate has a through via hole. The through substrate via structure is disposed in the through via hole. The through substrate via structure disposed in the through via hole includes a liner structure and a metal layer. The liner structure includes at least two insulation liners and at least one conductive shielding layer disposed between the insulation liners, in which the insulation liners and the at least one conductive shielding layer conformally cover a sidewall and a bottom of the through via hole. The metal layer covers the liner structure and fills the through via hole.

Abstract: A semiconductor device includes a substrate and a through substrate via structure. The substrate has a through via hole. The through substrate via structure is disposed in the through via hole. The through substrate via structure disposed in the through via hole includes a liner structure and a metal layer. The liner structure includes at least two insulation liners and at least one conductive shielding layer disposed between the insulation liners, in which the insulation liners and the at least one conductive shielding layer conformally cover a sidewall and a bottom of the through via hole. The metal layer covers the liner structure and fills the through via hole.

Abstract: A calibration board and a timing calibration method thereof are provided. The calibration board for calibrating signal delays of test channels in an automatic test equipment is pluggably disposed in the automatic test equipment and includes calibration groups, a first common node, and a switching module. Each calibration group includes a second common node and conductive pads electrically connecting to the second common node. Each conductive pad selectively and electrically connects to one test channel. The switching module electrically connects to the first common node and each second common node. When a first delay calibration procedure is performed, the connection between the first common node and each second common node is disabled. When a second delay calibration procedure is performed, the connection between the first common node and each second common node is built.

Abstract: A pulse generating apparatus capable of calibration and calibrating method are disclosed. The pulse generating apparatus includes a pulse generator and a delay detector. The pulse generator is configured to repeatedly generate a testing pulse. The delay detector is electrically connected with the pulse generator. When the pulse generator generates the testing pulse, the delay detector detects a feature value of the testing pulse at a plurality detecting time points, and calculates a calibration value according to the detected feature values. The delay detector outputs the calibration value to the pulse generator and the pulse generator adjusts the testing pulse according to the calibration value.

Abstract: A clock generating device includes a first timing delay module, a multiplexer, and a second timing delay module. The multiplexer is electrically connected to the first timing delay module. The second timing delay module is electrically connected to the multiplexer. The first timing delay module generates a plurality of delayed clock signals based on a reference clock signal. The multiplexer outputs a first delayed clock signal and a second delayed clock signal, among the plurality of delayed clock signals, based on a clock generating signal. The second timing delay module generates an output clock signal based on the clock generating signal, the first delayed clock signal and the second delayed clock signal.

Abstract: A clock generating device includes a first timing delay module, a multiplexer, and a second timing delay module. The multiplexer is electrically connected to the first timing delay module. The second timing delay module is electrically connected to the multiplexer. The first timing delay module generates a plurality of delayed clock signals based on a reference clock signal. The multiplexer outputs a first delayed clock signal and a second delayed clock signal, among the plurality of delayed clock signals, based on a clock generating signal. The second timing delay module generates an output clock signal based on the clock generating signal, the first delayed clock signal and the second delayed clock signal.

Abstract: A semiconductor device having a source feature and a drain feature formed in a substrate. The semiconductor device having a gate stack over a portion of the source feature and over a portion of the drain feature. The semiconductor device further having a first cap layer formed over substantially the entire source feature not covered by the gate stack, and a second cap layer formed over substantially the entire drain feature not covered by the gate stack. A method of forming a semiconductor device including forming a source feature and drain feature in a substrate. The method further includes forming a gate stack over a portion of the source feature and over a portion of the drain feature. The method further includes depositing a first cap layer over substantially the entire source feature not covered by the gate stack and a second cap layer over substantially the entire drain feature not covered by the gate stack.

Abstract: A calibration board and a timing calibration method thereof are provided. The calibration board for calibrating signal delays of test channels in an automatic test equipment is pluggably disposed in the automatic test equipment and includes calibration groups, a first common node, and a switching module. Each calibration group includes a second common node and conductive pads electrically connecting to the second common node. Each conductive pad selectively and electrically connects to one test channel. The switching module electrically connects to the first common node and each second common node. When a first delay calibration procedure is performed, the connection between the first common node and each second common node is disabled. When a second delay calibration procedure is performed, the connection between the first common node and each second common node is built.

Abstract: A method of forming a semiconductor device includes forming a gate stack over a first portion of a source and a first portion of a drain. The method includes depositing a first cap layer comprising silicon over a second portion of the source and depositing a second cap layer comprising silicon over a second portion of the drain. The method includes depositing a metal layer over the gate stack, the first cap layer and the second cap layer. The method includes annealing the semiconductor device until all of the silicon in the first and second cap layers reacts with metal from the metal layer, wherein the annealing causes metal from the metal layer to react with silicon in the first cap layer, the second cap layer, the source, and the drain. Annealing the semiconductor device includes forming a salicide layer having a germanium concentration less than 3% by weight.

Abstract: A device includes a semiconductor substrate, a gate stack over the semiconductor substrate, and a stressor region having at least a portion in the semiconductor substrate and adjacent to the gate stack. The stressor region includes a first stressor region having a first p-type impurity concentration, a second stressor region over the first stressor region, wherein the second stressor region has a second p-type impurity concentration, and a third stressor region over the second stressor region. The third stressor region has a third p-type impurity concentration. The second p-type impurity concentration is lower than the first and the third p-type impurity concentrations.

Abstract: A device includes a semiconductor substrate, a gate stack over the semiconductor substrate, and a stressor region having at least a portion in the semiconductor substrate and adjacent to the gate stack. The stressor region includes a first stressor region having a first p-type impurity concentration, a second stressor region over the first stressor region, wherein the second stressor region has a second p-type impurity concentration, and a third stressor region over the second stressor region. The third stressor region has a third p-type impurity concentration. The second p-type impurity concentration is lower than the first and the third p-type impurity concentrations.

Abstract: A device includes a semiconductor substrate, a gate stack over the semiconductor substrate, and a stressor region having at least a portion in the semiconductor substrate and adjacent to the gate stack. The stressor region includes a first stressor region having a first p-type impurity concentration, a second stressor region over the first stressor region, wherein the second stressor region has a second p-type impurity concentration, and a third stressor region over the second stressor region. The third stressor region has a third p-type impurity concentration. The second p-type impurity concentration is lower than the first and the third p-type impurity concentrations.

Abstract: A device includes a semiconductor substrate, a gate stack over the semiconductor substrate, and a stressor region having at least a portion in the semiconductor substrate and adjacent to the gate stack. The stressor region includes a first stressor region having a first p-type impurity concentration, a second stressor region over the first stressor region, wherein the second stressor region has a second p-type impurity concentration, and a third stressor region over the second stressor region. The third stressor region has a third p-type impurity concentration. The second p-type impurity concentration is lower than the first and the third p-type impurity concentrations.

Abstract: A semiconductor device having a source feature and a drain feature formed in a substrate. The semiconductor device having a gate stack over a portion of the source feature and over a portion of the drain feature. The semiconductor device further having a first cap layer formed over substantially the entire source feature not covered by the gate stack, and a second cap layer formed over substantially the entire drain feature not covered by the gate stack. A method of forming a semiconductor device including forming a source feature and drain feature in a substrate. The method further includes forming a gate stack over a portion of the source feature and over a portion of the drain feature. The method further includes depositing a first cap layer over substantially the entire source feature not covered by the gate stack and a second cap layer over substantially the entire drain feature not covered by the gate stack.

Abstract: Methods for forming an improved bump structure on a semiconductor device are provided. In one embodiment, a substrate is provided having at least one contact pad formed thereon. A first passivation layer is formed over the substrate, the first passivation layer having at least one opening therein exposing a portion of the contact pad. A first patterned and etched conductive metal layer is formed on the contact pad and above a portion of the first passivation layer. A second patterned and etched passivation layer is formed above the first passivation layer and a portion of the first conductive metal layer, wherein a portion of the ends of the first conductive metal layer is wedged between the first and second passivation layers. A second conductive metal layer is formed above the second passivation layer and the first conductive metal layer.

Abstract: An arbitration circuit and method for a multiport high speed memory in a computer microprocessor. A plurality of addresses are provided to a plurality of ports. The addresses are decoded in a plurality of decoders. The decoded output lines are compared in a comparison circuitry to determine if one or more of the ports is requesting access to the same memory line, and a comparison bit indicative of a match is outputted. If asserted, the comparison bit disables a line driver so that only one of the wordlines in a particular memory line is driven at any one time.