Patents by Inventor Ching-Hua Hsieh
Ching-Hua Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12125797Abstract: A package structure is provided. The package structure includes a semiconductor chip and a first dielectric layer over the semiconductor chip and extending across opposite sidewalls of the semiconductor chip. The package structure also includes a conductive layer over the first dielectric layer, and the conductive layer has multiple first protruding portions extending into the first dielectric layer. The package structure further includes a second dielectric layer over the first dielectric layer and the conductive layer. The second dielectric layer has multiple second protruding portions extending into the first dielectric layer. Each of the first protruding portions and the second protruding portions is thinner than the first dielectric layer.Type: GrantFiled: July 1, 2022Date of Patent: October 22, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shing-Chao Chen, Chih-Wei Lin, Tsung-Hsien Chiang, Ming-Da Cheng, Ching-Hua Hsieh
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Publication number: 20240339424Abstract: Embodiments provide a device structure and method of forming a device structure including an infill structure to capture solder materials within confines of openings of the infill structure. Metal pillars of one device can penetrate through a non-conductive film and contact solder regions of another device. A separate underfill is not needed.Type: ApplicationFiled: August 7, 2023Publication date: October 10, 2024Inventors: Wei-Yu Chen, Chao-Wei Chiu, Hsin Liang Chen, Hao-Jan Pei, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240332215Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.Type: ApplicationFiled: June 12, 2024Publication date: October 3, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Jui Yu, Ching-Hua Hsieh, Cheng-Ting Chen, Hsiu-Jen Lin, Wei-Yu Chen, Chih-Chiang Tsao, Chao-Wei Chiu
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Publication number: 20240332132Abstract: A semiconductor package and a manufacturing method are provided. The semiconductor package includes a carrier substrate, a through substrate via (TSV), a first conductive pattern, and an encapsulated die. The TSV penetrates through the carrier substrate and includes a first portion and a second portion connected to the first portion, the first portion includes a first slanted sidewall with a first slope, the second portion includes a second slanted sidewall with a second slope, and the first slope is substantially milder than the second slope. The first conductive pattern is disposed on the carrier substrate and connected to the first portion of the TSV. The encapsulated die is disposed on the carrier substrate and electrically coupled to the TSV through the first conductive pattern.Type: ApplicationFiled: June 12, 2024Publication date: October 3, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Chun Liao, Sung-Yueh Wu, Chien-Ling Hwang, Ching-Hua Hsieh
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Patent number: 12107064Abstract: A semiconductor package includes a substrate, a semiconductor device over the substrate and a plurality of solder joint structures bonded between the semiconductor device and the substrate, wherein each of the plurality of solder joint structures includes, by weight percent, 2% to 23% of Indium (In).Type: GrantFiled: April 13, 2022Date of Patent: October 1, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Jui Yu, Chih-Chiang Tsao, Hsuan-Ting Kuo, Mao-Yen Chang, Hsiu-Jen Lin, Ching-Hua Hsieh, Hao-Jan Pei
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Publication number: 20240321848Abstract: A package includes a redistribution structure, a bridge die, conductive pillars, connectors, a first die, first solder joints, and second solder joints. The bridge die includes a substrate, a dielectric layer disposed on the substrate, and routing patterns embedded in the dielectric layer. The conductive pillars are coupled to the redistribution structure at a position that is laterally offset from the bridge die. The connectors are coupled to the bridge die and the redistribution structure, such that the bridge die is electrically coupled to the redistribution structure through at least the connectors. The first solder joints are coupled to the redistribution structure and the first die, such that the first die is electrically coupled to the bridge die. The second solder joints are coupled to the redistribution structure and the first die, such that the first die is electrically coupled to the conductive pillars.Type: ApplicationFiled: June 6, 2024Publication date: September 26, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shing-Chao Chen, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Chieh Yang
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Publication number: 20240312941Abstract: An electronic apparatus including a package substrate and a structure disposed on and electrically connected to the package substrate through conductive bumps is provided. The material of the conductive bumps includes a bismuth (Bi) containing alloy or an indium (In) containing alloy. In some embodiments, the bismuth (Bi) containing alloy includes Sn—Ag—Cu—Bi alloy. In some embodiments, a concentration of bismuth (Bi) contained in the Sn—Ag—Cu—Bi alloy ranges from about 1 wt % to about 10 wt %. Methods for forming the Sn—Ag—Cu—Bi alloy are also provided.Type: ApplicationFiled: March 13, 2023Publication date: September 19, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Wei Chiu, Wei-Yu Chen, Chih-Chiang Tsao, Hao-Jan Pei, Hsiu-Jen Lin, Ching-Hua Hsieh
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Publication number: 20240312859Abstract: A manufacturing method of a package system includes: providing a base plate with a first thermal interface material (TIM) layer; placing a semiconductor package on the first TIM layer over the base plate, wherein the semiconductor package comprises a plurality of packaging units arranged in an array and a plurality of electrical connectors surrounding the array of the plurality of packaging units; stacking a gasket and a top plate on the array of the plurality of packaging units, wherein the gasket is interposed between the top plate and the array of the plurality of packaging units; and securing the top plate, the gasket, the plurality of packaging units, and the base plate together through a plurality of fasteners, wherein each of the plurality of fasteners is arranged at a gap between two of the adjacent packaging units.Type: ApplicationFiled: May 26, 2024Publication date: September 19, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Hsuan Lee, Ching-Hua Hsieh, Chien-Ling Hwang
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Publication number: 20240304474Abstract: A pickup apparatus for separating a semiconductor package from an adhesive film includes a platform, a roller, a moving mechanism, and a collector element. The platform has a surface disposed with the adhesive film, where the adhesive film is disposed between the platform and the semiconductor package. The roller is disposed inside the platform and under the adhesive film, where the roller includes a body and a plurality of protrusions distributed over the body. The moving mechanism is connected to the roller to control a movement of the roller. The collector element is disposed over the platform and the adhesive film, where the collector element is configured to remove the semiconductor package from the adhesive film.Type: ApplicationFiled: March 8, 2023Publication date: September 12, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Chun Liao, Ching-Hua Hsieh, Chih-Wei Lin, Hsiao-Chung Liang, Ying-Jui Huang
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Publication number: 20240293962Abstract: A molded semiconductor device includes a semiconductor device and a molding material encapsulating the semiconductor device, wherein an upper surface of the molding material is substantially coplanar with an upper surface of the semiconductor device and comprises a groove at least partially surrounding the upper surface of the semiconductor device.Type: ApplicationFiled: May 14, 2024Publication date: September 5, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Feng Weng, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin, Sheng-Hsiang Chiu, Yao-Tong Lai, Chia-Min Lin
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Patent number: 12080653Abstract: A method for forming a chip package is provided. The method includes disposing a semiconductor die over a carrier substrate and forming a protection layer over the carrier substrate to surround the semiconductor die. The method also includes forming a dielectric layer over the protection layer and the semiconductor die. The method further includes planarizing a first portion of the dielectric layer and planarizing a second portion of the dielectric layer after the first portion of the dielectric layer is planarized. In addition, the method includes forming a conductive layer over the dielectric layer after the first portion and the second portion of the dielectric layer are planarized.Type: GrantFiled: May 24, 2021Date of Patent: September 3, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shing-Chao Chen, Chih-Wei Lin, Tsung-Hsien Chiang, Ming-Da Cheng, Ching-Hua Hsieh
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Publication number: 20240290734Abstract: A package structure includes a semiconductor device, a molding compound, a first dielectric layer, and a through-via. The molding compound is in contact with a sidewall of the semiconductor device. The first dielectric layer is over the molding compound and the semiconductor device. The through-via is in the molding compound and the first dielectric layer. The through-via is a continuous element and in contact with the first dielectric layer.Type: ApplicationFiled: May 6, 2024Publication date: August 29, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Hsuan TAI, Ting-Ting KUO, Yu-Chih HUANG, Chih-Wei LIN, Hsiu-Jen LIN, Chih-Hua CHEN, Ming-Da CHENG, Ching-Hua HSIEH, Hao-Yi TSAI, Chung-Shi LIU
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Publication number: 20240274589Abstract: A manufacturing method of a package-on-package structure includes placing a lower package on a tape, where conductive bumps of the lower package are in contact with the tape; and bonding an upper package to the lower package, where during the bonding, the conductive bumps are pressed against the tape so that a curvature of the respective conductive bump changes.Type: ApplicationFiled: April 22, 2024Publication date: August 15, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsuan-Ting Kuo, Ching-Hua Hsieh, Cheng-Ting Chen, Hsiu-Jen Lin, Hao-Jan Pei, Yu-Peng Tsai, Chia-Lun Chang, Chih-Chiang Tsao, Philip Yu-shuan Chung
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Patent number: 12062832Abstract: A method of manufacturing an electronic device includes providing a core dielectric layer with two conductive layers formed on two opposite surfaces of the core dielectric layer, and removing at least a portion of each of the two conductive layers to respectively form an antenna pattern and a circuit pattern of a chip package at the two opposite surfaces of the core dielectric layer.Type: GrantFiled: July 22, 2021Date of Patent: August 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Hsuan Lee, Ching-Hua Hsieh, Chien-Ling Hwang, Yu-Ting Chiu, Jui-Chang Kuo
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Publication number: 20240262096Abstract: A method for laminating a film to a wafer and apparatus for performing the lamination process are disclosed. The method includes providing the wafer and the film in a process chamber where the wafer and the film are separated from each other, achieving a vacuum state and a process temperature in the process chamber, and laminating the film to contact a surface of the wafer.Type: ApplicationFiled: February 8, 2023Publication date: August 8, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Ting Chiu, Ying-Jui Huang, Chien-Ling Hwang, Ching-Hua Hsieh
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Publication number: 20240266316Abstract: An embodiment is a device including a substrate comprising conductive pads, a package component bonded to the conductive pads of the substrate with solder connectors, the package component comprising an integrated circuit die, the integrated circuit die comprising die connectors, one of the solder connectors coupled to each of the die connectors and a corresponding conductive pad of the substrate, a first dielectric layer laterally surrounding each of the die connectors and a portion of the solder connectors, and a second dielectric layer being between the first dielectric layer and the substrate, the second dielectric layer laterally surrounding each of the conductive pads of the substrate.Type: ApplicationFiled: June 5, 2023Publication date: August 8, 2024Inventors: Wei-Yu Chen, Ching-Hua Hsieh, Hsiu-Jen Lin, Hao-Jan Pei, Chao-Wei Chiu, Hsin Liang Chen
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Patent number: 12057359Abstract: A semiconductor package including a circuit substrate, an interposer structure, a plurality of dies, and an insulating encapsulant is provided. The interposer structure is disposed on the circuit substrate. The plurality of dies is disposed on the interposer structure, wherein the plurality of dies is electrically connected to the circuit substrate through the interposer structure. The insulating encapsulant is disposed on the circuit substrate, wherein the insulating encapsulant surrounds the plurality of dies and the interposer structure and encapsulates at least the interposer structure, the insulating encapsulant has a groove that surrounds the interposer structure and the plurality of dies, and the interposer structure and the plurality of dies are confined to be located within the groove.Type: GrantFiled: August 9, 2022Date of Patent: August 6, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Cheng Lin, Ching-Hua Hsieh, Chen-Hua Yu, Chung-Shi Liu, Chih-Wei Lin
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Patent number: 12057415Abstract: A semiconductor device including a chip package, a dielectric structure, and a first antenna pattern is provided. The dielectric structure is disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern is disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern.Type: GrantFiled: May 29, 2023Date of Patent: August 6, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Albert Wan, Ching-Hua Hsieh, Chao-Wen Shih, Han-Ping Pu, Meng-Tse Chen, Sheng-Hsiang Chiu
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Patent number: 12051655Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.Type: GrantFiled: July 16, 2021Date of Patent: July 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Jui Yu, Ching-Hua Hsieh, Cheng-Ting Chen, Hsiu-Jen Lin, Wei-Yu Chen, Chih-Chiang Tsao, Chao-Wei Chiu
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Patent number: 12051639Abstract: A package structure includes a first package, a second package, a conductive spacer, and a flux portion. The first package includes a semiconductor die. The second package is stacked to the first package. The conductive spacer is disposed between and electrically couples the first package and the second package. The flux portion is disposed between and electrically couples the first package and the conductive spacer, where the flux portion includes a first portion and a second portion separating from the first portion by a gap, and the first portion and the second portion are symmetric about an extending direction of the gap. The gap is overlapped with the conductive spacer.Type: GrantFiled: March 2, 2022Date of Patent: July 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tsao, Chao-Wei Chiu, Jen-Jui Yu, Hsiu-Jen Lin, Ching-Hua Hsieh