Abstract: In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data state. The first random bit is then read from the MRAM cell.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: Systems and methods for correcting data errors in memory caused by high-temperature processing of the memory are provided. An integrated circuit (IC) die including a memory is formed. Addresses of memory locations that are susceptible to data loss when subjected to elevated temperatures are determined. Bits of data are written to the memory, where the bits of data include a set of bits written to the memory locations. The set of bits are written to a storage device of the IC die that is not susceptible to data loss when subjected to the elevated temperatures, the subset of bits comprise compressed code. At least one of the bits stored at the addresses is overwritten after subjecting the IC die to an elevated temperature. The at least one of the bits is overwritten based on the set of bits written to the storage device.

Abstract: The present disclosure provides a package structure, including a mounting pad having a mounting surface, a semiconductor chip disposed on the mounting surface of the mounting pad, wherein the semiconductor chip includes a first surface, a second surface opposite to the first surface and facing the mounting surface, and a third surface connecting the first surface and the second surface, a first magnetic field shielding, including a first portion proximal to the third surface of the semiconductor chip, wherein the first portion has a first height calculated from the mounting surface to a top surface, and a second portion distal to the semiconductor chip, has a second height calculated from the mounting surface to a position at a surface facing away from the mounting surface, wherein the second height is less than the first height, wherein the second portion has an inclined sidewall.

Abstract: This invention is to provide a hard coating film, comprising a polymethyl methacrylate (PMMA) base film and an antiglare hard coating layer formed thereon, wherein the antiglare hard coating layer comprises a (meth)acrylate composition, an initiator, a plurality of silica nanoparticles, a plurality of organic microparticles and a leveling agent. The (meth)acrylate composition comprises a urethane (meth)acrylate oligomer with a functionality of 6 to 15 and a molecular weight ranging between 1,000 and 4,500, and at least one (meth)acrylate monomer with a functionality of 3 to 6, and at least one (meth)acrylate monomer with functionality of less than 3.

Abstract: Systems and methods for correcting data errors in memory caused by high-temperature processing of the memory are provided. An integrated circuit (IC) die including a memory is formed. Addresses of memory locations that are susceptible to data loss when subjected to elevated temperatures are determined. Bits of data are written to the memory, where the bits of data include a set of bits written to the memory locations. The set of bits are written to a storage device of the IC die that is not susceptible to data loss when subjected to the elevated temperatures, the subset of bits comprise compressed code. At least one of the bits stored at the addresses is overwritten after subjecting the IC die to an elevated temperature. The at least one of the bits is overwritten based on the set of bits written to the storage device.

Abstract: The present disclosure provides a package structure, including a mounting pad having a mounting surface, a semiconductor chip disposed on the mounting surface of the mounting pad, wherein the semiconductor chip includes: a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface and facing the mounting surface, and a third surface connecting the first surface and the second surface, a magnetic device disposed in the semiconductor chip, a first magnetic field shielding at least partially surrounding the third surface, a second magnetic field shielding, including a top surface facing the second surface of the semiconductor chip, and a molding surrounding the semiconductor chip, wherein the entire top surface of the second magnetic field shielding is in direct contact with the molding.

Abstract: A biodegradable plastic composition is used to manufacture a biodegradable plastic. The biodegradable plastic composition includes a biodegradable polyester, a polysaccharide, and a modifier. The modifier is used to compound the polysaccharide and the biodegradable polyester to obtain a biodegradable plastic. The biodegradable plastic has a tensile strength greater than 3 MPa and an elongation greater than 81%.

Abstract: Devices and methods are provided in which a magnetic sensitive semiconductor chip, such as a magnetoresistive random-access memory (MRAM) chip, is shielded from magnetic interference by a magnetic shielding layer. A device includes a housing that defines an exterior surface. A semiconductor chip is disposed within the housing, and the semiconductor chip is spaced apart from the exterior surface of the housing. A magnetic shielding layer is spaced apart from the semiconductor chip by a distance less than 5 mm.

Abstract: A test apparatus includes a tray including at least a first region and a second region, and a cap disposed over the tray. The cap includes a cap body, and at least a first magnet and a second magnet disposed over the cap body. The first magnet is configured to provide a first magnetic field to the first region of the tray, and the second magnet is configured to provide a second magnetic field to the second region of the tray. A strength of the first magnetic field is different from a strength of the second magnetic field.

Abstract: A test apparatus includes a tray including at least a first region and a second region, and a cap disposed over the tray. The cap includes a cap body, and at least a first magnet and a second magnet disposed over the cap body. The first magnet is configured to provide a first magnetic field to the first region of the tray, and the second magnet is configured to provide a second magnetic field to the second region of the tray. A strength of the first magnetic field is different from a strength of the second magnetic field.

Abstract: Systems and methods for correcting data errors in memory caused by high-temperature processing of the memory are provided. An integrated circuit (IC) die including a memory is formed. Addresses of memory locations that are susceptible to data loss when subjected to elevated temperatures are determined. Bits of data are written to the memory, where the bits of data include a set of bits written to the memory locations. The set of bits are written to a storage device of the IC die that is not susceptible to data loss when subjected to the elevated temperatures, the subset of bits comprise compressed code. At least one of the bits stored at the addresses is overwritten after subjecting the IC die to an elevated temperature. The at least one of the bits is overwritten based on the set of bits written to the storage device.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: Systems and methods for correcting data errors in memory caused by high-temperature processing of the memory are provided. An integrated circuit (IC) die including a memory is formed. Addresses of memory locations that are susceptible to data loss when subjected to elevated temperatures are determined. Bits of data are written to the memory, where the bits of data include a set of bits written to the memory locations. The set of bits are written to a storage device of the IC die that is not susceptible to data loss when subjected to the elevated temperatures, the subset of bits comprise compressed code. At least one of the bits stored at the addresses is overwritten after subjecting the IC die to an elevated temperature. The at least one of the bits is overwritten based on the set of bits written to the storage device.

Abstract: The present disclosure provides a package structure, including a mounting pad having a mounting surface, a semiconductor chip disposed on the mounting surface of the mounting pad, wherein the semiconductor chip includes: a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface and facing the mounting surface, and a third surface connecting the first surface and the second surface, a magnetic device disposed in the semiconductor chip, a first magnetic field shielding at least partially surrounding the third surface, a second magnetic field shielding, including a top surface facing the second surface of the semiconductor chip, and a molding surrounding the semiconductor chip, wherein the entire top surface of the second magnetic field shielding is in direct contact with the molding.

Abstract: Devices and methods are provided in which a magnetic sensitive semiconductor chip, such as a magnetoresistive random-access memory (MRAM) chip, is shielded from magnetic interference by a magnetic shielding layer. A device includes a housing that defines an exterior surface. A semiconductor chip is disposed within the housing, and the semiconductor chip is spaced apart from the exterior surface of the housing. A magnetic shielding layer is spaced apart from the semiconductor chip by a distance less than 5 mm.

Abstract: In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Abstract: The present disclosure provides a package structure, including a semiconductor chip having a magnetic device, wherein the semiconductor chip includes a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface, and a third surface connecting the first surface and the second surface, and a first magnetic field shielding at least partially surrounding the third surface.

Abstract: A biodegradable plastic composition is used to manufacture a biodegradable plastic. The biodegradable plastic composition includes a biodegradable polyester, a polysaccharide, and a modifier. The modifier is used to compound the polysaccharide and the biodegradable polyester to obtain a biodegradable plastic. The biodegradable plastic has a tensile strength greater than 3 MPa and an elongation greater than 81%.