Patents by Inventor Ching-Huei Su
Ching-Huei Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20030189249Abstract: A chip structure having a chip, an adhesion layer, and a metal layer. The chip has an active surface and many conductive pads. The conductive pads are disposed on the active surface, wherein the conductive pads are made of copper. The adhesion layer is directly formed on the conductive pads, wherein the material of the adhesion layer includes copper. The metal layer is formed on the adhesion layer, wherein the material of the metal layer includes copper.Type: ApplicationFiled: March 11, 2003Publication date: October 9, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Ching-Huei Su, Chao-Fu Weng
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Publication number: 20030189261Abstract: An under-ball-metallurgy layer over a contact pad is provided. The contact pad and corresponding contact surface of the under-bump-metallurgy layer are made of copper. The under-ball-metallurgy layer is constructed from a stack of metallic layers selected from a group consisting of titanium/copper, titanium-tungsten alloy/copper, tantalum/copper, titanium/titanium-nitride compound/copper, tantalum/tantalum-nitride compound/copper, tantalum/nickel-vanadium alloy/copper, tantalum/nickel/copper, copper/nickel-vanadium alloy/copper, titanium/nickel/copper, copper/chromium-copper alloy/copper, or chromium-copper alloy/chromium/chromium-copper alloy/copper.Type: ApplicationFiled: March 11, 2003Publication date: October 9, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Ching-Huei Su, Chao-Fu Weng
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Publication number: 20030189260Abstract: A flip-chip bonding structure suited for bonding a first connect pad and a second connect pad. The flip-chip bonding structure includes a metal layer, a bump and an adhesion body. The metal layer is placed on the first connect pad. The bump, lead-free material, is placed on the metal layer. The adhesion body, made of lead-free material, is placed on the bump and is bonded onto the second connect pad.Type: ApplicationFiled: April 1, 2003Publication date: October 9, 2003Inventors: HO-MING TONG, CHUN-CHI LEE, JEN-KUANG FANG, MIN-LUNG HUANG, CHING-HUEI SU, CHAO-FU WENG
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Patent number: 6617237Abstract: A lead-free solder bump fabrication process for producing a plurality of lead-free solder bumps over a wafer is provided. The lead-free solder bump fabrication process includes forming a lead-free pre-formed solder bump over each bonding pad on the wafer and then forming a patterned solder mask layer over the active surface of the wafer. The openings in the solder mask layer expose the respective lead-free pre-formed solder bumps on the wafer. Thereafter, lead-free solder material is deposited into the opening. The material composition of the lead-free solder material differs from the material composition of the lead-free pre-formed solder bump. A reflow process is conducted so that the lead-free pre-formed solder bump fuses with the lead-free solder material to form a lead-free solder bump. Finally, the solder mask layer is removed.Type: GrantFiled: February 27, 2003Date of Patent: September 9, 2003Assignee: Advanced Semiconductor Engineering, Inc.Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030164552Abstract: An under-ball metallic layer on a contact pad with the junction between the under-ball metallic layer and the contact pad made from copper material. The under-ball metallic layer comprises an adhesion layer, a barrier layer and a wettable layer. The adhesion layer is formed over the contact pad and made from a material such as titanium-tungsten alloy or chromium. The barrier layer is formed over the adhesion layer and made from a material such as nickel-vanadium alloy. The wettable layer is formed over the barrier layer and made from a material such as copper, palladium or gold.Type: ApplicationFiled: May 3, 2002Publication date: September 4, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee
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Publication number: 20030166330Abstract: The present invention provides a bump fabrication process. After forming an under bump metallurgy (UBM) layer and bumps in sequence over the substrate, the under bump metallurgy layer that is not covered by the bumps is etched with an etchant. The etchant mainly comprises sulfuric acid and de-ionized water. The etchant can etch the nickel-vanadium layer of the UBM layer without damaging the bumps.Type: ApplicationFiled: February 12, 2003Publication date: September 4, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030166331Abstract: A bump fabrication process for forming a bump over a wafer having a plurality of bonding pads thereon is provided. A patterned solder mask layer having a plurality of openings that exposes the respective bonding pads is formed over a wafer. The area of the opening in a the cross-sectional area through a the bottom-section as well as through a the top-section of the opening is smaller than the area of the opening in a the cross-sectional area through a the mid-section of the opening. Solder material is deposited into the opening and then a reflow process is conducted fusing the solder material together to form a spherical bump inside the opening. Finally, the solder mask layer is removed. In addition, a pre-formed bump may form on the bonding pad of the wafer prior to forming the patterned solder mask layer over the wafer having at leastwith an opening that exposes the pre-formed bump.Type: ApplicationFiled: February 10, 2003Publication date: September 4, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030166332Abstract: A bump fabrication method is described. The method comprises the steps of providing a wafer having an active surface and a plurality of bonding pads formed on the active surface; respectively forming an under bump metallurgy layer onto the bonding pads, wherein the under bump metallurgy layer includes at least a wetting layer having an oxidized region and positioned at a top layer of the under bump metallurgy layer; patterning a masking layer on the active surface wherein the masking layer is provided with a plurality of openings to expose the wetting layers; removing the oxidized region of the wetting layer using ionic bombardment; fully forming a flux film on the active layer, wherein at least a portion of the flux film covers onto the wetting layer; filling a solder paste into the openings; performing a re-flow process to form a plurality of bumps after the solder paste melts so that the flux film removes the oxidized region of the wetting layer; and removing the masking layer.Type: ApplicationFiled: February 24, 2003Publication date: September 4, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030164395Abstract: A solder ball attaching process for attaching solder balls to a wafer is provided. First, an under-ball-metallurgy layer is formed on the active surface of the wafer. Patterned masking layers are sequentially formed over the active surface of the wafer. The masking layers together form a step opening structure that exposes the under-ball-metallic layer. A solder ball is placed on the uppermost masking layer and allowed to roll so that the solder ball drops into the step opening structure by gravity. A reflow process is conducted to join the solder ball and the under-ball-metallurgy layer together. Finally, various masking layers are removed to expose the solder ball on the bonding pad of the wafer.Type: ApplicationFiled: December 30, 2002Publication date: September 4, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030162321Abstract: A bumping process wherein a substrate is first provided with many electrical connections. Subsequently, the bumps on the bump transfer substrate are pressed onto the electrical connections of the substrate accompanying a heating process and then the bumps are transferred onto the electrical connections of the substrate because the adhesion characteristic between the bumps and the electrical connections is better than that between the bumps and the release layer.Type: ApplicationFiled: December 30, 2002Publication date: August 28, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030160335Abstract: A flip chip interconnection structure is formed over the active surface of a chip. The active surface of the chip includes a plurality of bonding pads. A redistribution trace layer, including at least a redistribution trace, is formed over the active surface in a manner to electrically connect to the bonding pads. A plurality of conductive posts, made of a tin-lead alloy having a tin to lead ratio greater than about 10:90, are formed on and connected to the redistribution trace structure. An insulating layer is formed over the redistribution trace layer to encompass the conductive posts. The insulating layer comprises a plurality of openings through which the conductive posts externally protrude.Type: ApplicationFiled: January 22, 2003Publication date: August 28, 2003Inventors: HO-MING TONG, CHUN-CHI LEE, JEN-KUANG FANG, MIN-LUNG HUANG, JAU-SHOUNG CHEN, CHING-HUEI SU, CHAO-FU WENG, YUNG-CHI LEE, YU-CHEN CHOU, TSUNG-HUA WU, SU TAO
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Publication number: 20030162381Abstract: A lead-free solder bump fabrication process for producing a plurality of lead-free solder bumps over a wafer is provided. The lead-free solder bump fabrication process includes forming a lead-free pre-formed solder bump over each bonding pad on the wafer and then forming a patterned solder mask layer over the active surface of the wafer. The openings in the solder mask layer expose the respective lead-free pre-formed solder bumps on the wafer. Thereafter, lead-free solder material is deposited into the opening. The material composition of the lead-free solder material differs from the material composition of the lead-free pre-formed solder bump. A reflow process is conducted so that the lead-free pre-formed solder bump fuses with the lead-free solder material to form a lead-free solder bump. Finally, the solder mask layer is removed.Type: ApplicationFiled: February 27, 2003Publication date: August 28, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su tao
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Publication number: 20030162331Abstract: A method for preventing burnt fuse pads from further electrical connection suitable before the formation of bumps on the wafer. A dielectric layer is formed over the active surface of the wafer covering the bump pads and the fuse pads of the wafer, wherein a central region of the fuse pads is burnt to form a gap which allows the material of the dielectric layer to fill up the gap. Afterwards, either a part of the dielectric layer is removed. and the part of the dielectric layer covering the fuse pads remainsor a part of the dielectric layer covering the bump pads is removed. Then, an under ball metallurgy layer is formed on the bump pads of the wafer so that the material of the under ball metallurgy layer does not cover the two sides of the fuse pad at the same time, or fill into the gap. As a result, the electrical isolation still remains.Type: ApplicationFiled: February 20, 2003Publication date: August 28, 2003Inventors: HO-MING TONG, CHUN-CHI LEE, JEN-KUANG FANG, MIN-LUNG HUANG, JAU-SHOUNG CHEN, CHING-HUEI SU, CHAO-FU WENG, YUNG-CHI LEE, YU-CHEN CHOU, TSUNG-HUA WU, SU TAO
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Publication number: 20030162362Abstract: A wafer bump fabrication process is provided in the present invention. A wafer with multiple bonding pads and a passivation layer, which exposes the bonding pads, is provided. The surface of each bonding pad has an under bump metallurgy layer. A patterned photoresist layer with a plurality of opening is formed which openings expose the under bump metallurgy layer. Afterwards a baking process is performed to cure the patterned photoresist layer. Following a solder paste fill-in process is performed to fill a solder paste into the openings. A reflow process is performed to form bumps from the solder paste in the openings. The patterned photoresist layer is removed.Type: ApplicationFiled: February 20, 2003Publication date: August 28, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030162380Abstract: A solder ball fabricating process for forming solder balls over a wafer having an active layer is provided. A patterned solder mask layer is formed over the active surface of the wafer. The patterned solder mask layer has an opening that exposes a bonding pad on the wafer. Solder material is deposited into the opening over the bonding pad. A reflow process is conducted to form a pre-solder body. The aforementioned steps are repeated so that various solder materials are fused together to form a solder ball over the bonding pad.Type: ApplicationFiled: February 26, 2003Publication date: August 28, 2003Inventors: HO-MING TONG, CHUN-CHI LEE, JEN-KUANG FANG, MIN-LUNG HUANG, JAU-SHOUNG CHEN, CHING-HUEI SU, CHAO-FU WENG, YUNG-CHI LEE, YU-CHEN CHOU
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Publication number: 20030160089Abstract: A method of modifying the tin to lead ratio of a tin-lead bump forms a patterned solder mask over a substrate that comprises a first tin-lead bump formed thereon, the patterned solder mask having an opening that exposes the tin-lead bump. A solder material including tin and lead is filled in the opening of the solder mask over the first tin-lead bump. The solder material has a tin to lead ratio that differs from that of the first tin-lead bump. The solder material is reflowed to fuse with the first tin-lead bump, which forms a second tin-lead bump. The tin to lead ratio of the second tin-lead bump is thereby different from that of the first tin-lead bump.Type: ApplicationFiled: January 17, 2003Publication date: August 28, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030161123Abstract: A bonding structure for bonding two substrates by a metal stud includes a first substrate, a second substrate, at least a metal stud and an adhesive. The bonding structure includes a first substrate, a second substrate, at least a metal stud and an adhesive. The metal stud is arranged between the first substrate and the second substrate and attached to the first substrate. The adhesive is applied between the metal stud and the second substrate to electrically connect the metal stud and the second substrate.Type: ApplicationFiled: January 16, 2003Publication date: August 28, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030162379Abstract: A solder ball fabrication process for forming solder balls over a wafer having an active layer is provided. A plurality of patterned solder mask layers is sequentially formed over the active surface of the wafer. Each patterned solder mask layer has at least an opening that exposes a solder ball pad on the wafer. The opening of the patterned solder mask layers further away from the solder ball pad is larger in diameter than the opening of the patterned solder mask close to the solder ball pad. Solder material is deposited into the openings and a reflow process is conducted to melt the solder material together so that a solder ball is formed over the solder ball pad.Type: ApplicationFiled: February 12, 2003Publication date: August 28, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou
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Publication number: 20030160323Abstract: A wafer-level package structure, applicable to a flip-chip arrangement on a carrier, which comprises a plurality of contact points, is described. This wafer-level package structure is mainly formed with a chip and a conductive layer. The conductive layer is arranged on the bonding pads of the chip as contact points. The conductive layer can further be arranged at a region outside the bonding pads on the chip as a heat sink to enhance the heat dissipation ability of the package.Type: ApplicationFiled: December 19, 2002Publication date: August 28, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee, Yu-Chen Chou, Tsung-Hua Wu, Su Tao
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Publication number: 20030157789Abstract: A method of forming bumps on the active surface of a silicon wafer. A first under-ball metallic layer is formed over the active surface of the wafer. A second under-ball metallic layer is formed over the first under-ball metallic layer. A portion of the second under-ball metallic layer is removed to expose the first under-ball metallic layer. A plurality of solder blocks is implanted over the second under-ball metallic layer. A reflux operation is conducted and then the exposed first under-ball metallic layer is removed so that only the first under-ball metallic layer underneath the second under-ball metallic layer remains.Type: ApplicationFiled: May 3, 2002Publication date: August 21, 2003Inventors: Ho-Ming Tong, Chun-Chi Lee, Jen-Kuang Fang, Min-Lung Huang, Jau-Shoung Chen, Ching-Huei Su, Chao-Fu Weng, Yung-Chi Lee