Patents by Inventor Ching Hung
Ching Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170473Abstract: A chip package structure including a heat dissipation base, a first redistribution layer, a second redistribution layer, at least one chip, at least one metal stack, a plurality of conductive structures, and an encapsulant is provided. The second redistribution layer is disposed on the heat dissipation base and thermally coupled to the heat dissipation base. The chip, the metal stack, and the conductive structures are disposed between the second redistribution layer and the first redistribution layer. An active surface of the chip is electrically connected to the first redistribution layer and an inactive surface of the chip is thermally coupled to the second redistribution layer via the metal stack. The first redistribution layer is electrically connected to the second redistribution layer via the conductive structures. The encapsulant is filled between the second redistribution layer and the first redistribution layer. A manufacturing method of a chip package structure is also provided.Type: ApplicationFiled: July 6, 2023Publication date: May 23, 2024Applicant: Industrial Technology Research InstituteInventors: Hao-Che Kao, Wen-Hung Liu, Yu-Min Lin, Ching-Kuan Lee
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Publication number: 20240171161Abstract: A frequency calibration (FCAL) circuit and a method for calibrating an oscillation frequency of a controllable oscillator are provided. The FCAL circuit includes the controllable oscillator, a divider, a time-to-digital converter (TDC) and a calibration logic. The controllable oscillator generates a controllable oscillation clock according to a calibration code. The divider divides the oscillation frequency of the controllable oscillation clock by a predetermined divisor to generate a divided clock. The TDC converts a first period between first edges of a reference clock and the divided clock into a first period code and converts a second period between second edges of the reference clock and the divided clock into a second period code. The calibration logic compares the first period code and the second period code to generate a comparison result for determining whether the first period is greater or less than the second period, and accordingly controls the calibration code.Type: ApplicationFiled: July 18, 2023Publication date: May 23, 2024Applicant: MEDIATEK INC.Inventors: Chien-Wei Chen, Kairen Fong, Chao-Ching Hung, Yu-Li Hsueh
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Publication number: 20240170437Abstract: A package structure is disclosed. The package structure includes a first substrate, a second substrate, a gap, and a directing structure. The second substrate is disposed under the first substrate. The gap is between the first substrate and the second substrate. The gap includes a first region and a second region. The first region is configured to accommodate a filling material. The directing structure is disposed in a flow path of the filling material and configured to reduce a migration of the filling material from the first region to the second region.Type: ApplicationFiled: November 23, 2022Publication date: May 23, 2024Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chun Fu KUO, Shang Min CHUANG, Ching Hung CHUANG, Hsu Feng TSENG, Jia Zhen WANG
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Publication number: 20240172475Abstract: The invention discloses an etching solution and a manufacturing method of a display panel. The method includes following steps: providing a first substrate; forming a conductive layer stack including a first sub-layer, a second sub-layer and a third sub-layer, each of the first sub-layer and the second sub-layer includes a transparent conductive material including indium-containing oxide, the third sub-layer is disposed between the first sub-layer and the second sub-layer, and the third sub-layer includes silver or silver alloy; performing an etching process, an etching solution is used to etch the first sub-layer, the second sub-layer and the third sub-layer to form a first patterned sub-layer, a second patterned sub-layer and a third patterned sub-layer, and the etching solution includes 1 to 2.6 wt % of nitric acid, 35 to 45 wt % of acetic acid, 35 to 45 wt % of phosphoric acid and a remaining amount of water.Type: ApplicationFiled: October 17, 2023Publication date: May 23, 2024Applicant: HANNSTAR DISPLAY CORPORATIONInventors: Li-Fang Chiu, Ching-Chieh Lee, Chien-Hung Wu
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Publication number: 20240154015Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.Type: ApplicationFiled: March 22, 2023Publication date: May 9, 2024Inventors: Jui-Lin CHEN, Hsin-Wen SU, Chih-Ching WANG, Chen-Ming LEE, Chung-I YANG, Yi-Feng TING, Jon-Hsu HO, Lien-Jung HUNG, Ping-Wei WANG
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Publication number: 20240144056Abstract: A method includes: obtaining impact values for characteristic conditions; selecting training data subsets respectively from training data sets according to the impact values; obtaining a candidate model and an evaluation value based on the training data subsets; supplementing the training data subsets according to the impact values; obtaining another candidate model and another evaluation value based on training data subsets thus supplemented; repeating the step of supplementing the training data subset, and the step of obtaining another candidate model and another evaluation value based on the training data subsets thus supplemented; and selecting one of the candidate models as a prediction model based on the evaluation values.Type: ApplicationFiled: August 2, 2023Publication date: May 2, 2024Applicants: TAIPEI VETERANS GENERAL HOSPITALInventors: Chin-Chou Huang, Ming-Hui Hung, Ling-Chieh Shih, Yu-Ching Wang, Han Cheng, Yu-Chieh Shiao, Yu-Hsuan Tseng
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Publication number: 20240145327Abstract: A semiconductor device includes a substrate, an interconnect structure, and conductive vias. The substrate has a first side, a second side and a sidewall connecting the first side and the second side, wherein the sidewall includes a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, where the first planar sidewall is connected to the second planar sidewall through the curved sidewall. The interconnect structure is located on the first side of the substrate, where a sidewall of the interconnect structure is offset from the second planar sidewall. The conductive vias are located on the interconnect structure, where the interconnect structure is located between the conductive vias and the substrate.Type: ApplicationFiled: December 27, 2023Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chang-Jung Hsueh, Cheng-Nan Lin, Wan-Yu Chiang, Wei-Hung Lin, Ching-Wen Hsiao, Ming-Da Cheng
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Publication number: 20240145338Abstract: A heat sink and an electronic device are provided. The electronic device includes a circuit board and a heat sink. The circuit board has a heat source, and the heat sink contacts the heat source to dissipate the heat. The heat sink includes a heat dissipating plate and a cover plate. The heat dissipating plate has an inlet region, an outlet region and a vaporization region between the inlet region and the outlet region. The vaporization region is disposed corresponding to the heat source. The cover plate covers on the heat dissipating plate, and a space between the cover plate and the heat dissipating plate forms a channel with an inlet and an outlet. A cooling liquid flows into the channel from the inlet, is vaporized to a gas while passing through the vaporization region, and the vaporized gas dissipates outside the channel through the outlet.Type: ApplicationFiled: August 24, 2023Publication date: May 2, 2024Applicant: Giga Computing Technology Co., Ltd.Inventors: Jian-Hung Lin, Ching-Chuan Huang, Nobuhiro Adachi
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Patent number: 11969236Abstract: A wearable device for measuring blood pressure comprises a housing with through-holes formed thereon, a processing unit disposed in the housing, a display connected to the processing unit, a plurality of sensors connected to the processing unit, the sensors being configured to transmit at least one physiological signal to the processing unit via the through-holes, and a time delay structure connected between one of the through-holes and one of the sensors and configured to lengthen a path distance between the skin surface and the sensor, wherein the processing unit is configured to determine a systolic arterial pressure and a diastolic arterial pressure by the at least one physiological signal and a Moens-Korteweg (MK) function, and to control the display to display the systolic arterial pressure and the diastolic arterial pressure to be read by the user.Type: GrantFiled: May 24, 2019Date of Patent: April 30, 2024Assignee: Accurate Meditech IncInventors: Kuan Jen Wang, Cheng Yan Guo, Ching-Hung Huang
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Publication number: 20240127987Abstract: An integrated over-current protection device includes a positive temperature coefficient (PTC) component, a first conductive unit, a second conductive unit, a first conductive via, and a second conductive via. The PTC component includes a first PTC body, and has opposing first and second surfaces. The first conductive unit is disposed on the first surface, and includes a first electrode and a first conductive pad electrically insulated from the first electrode. The second conductive unit is disposed on the second surface, and includes a second electrode and a second conductive pad electrically insulated from the second electrode. The first conductive via extends through the first conductive unit and the PTC component to electrically connect the first electrode to the second conductive pad. The second conductive via extends through the second conductive unit and the PTC component to electrically connect the second electrode to the first conductive pad.Type: ApplicationFiled: October 17, 2022Publication date: April 18, 2024Inventors: Jack Jih-Sang CHEN, Chang-Hung JIANG, Ching-Chiang YEH, Ming-Chun LEE
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Patent number: 11955527Abstract: A method includes forming a first sacrificial layer over a substrate, and forming a sandwich structure over the first sacrificial layer. The sandwich structure includes a first isolation layer, a two-dimensional material over the first isolation layer, and a second isolation layer over the two-dimensional material. The method further includes forming a second sacrificial layer over the sandwich structure, forming a first source/drain region and a second source/drain region on opposing ends of, and contacting sidewalls of, the two-dimensional material, removing the first sacrificial layer and the second sacrificial layer to generate spaces, and forming a gate stack filling the spaces.Type: GrantFiled: June 18, 2021Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chao-Ching Cheng, Yi-Tse Hung, Hung-Li Chiang, Tzu-Chiang Chen, Lain-Jong Li, Jin Cai
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Patent number: 11955460Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.Type: GrantFiled: October 5, 2020Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Da Tsai, Meng-Tse Chen, Sheng-Feng Weng, Sheng-Hsiang Chiu, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
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Patent number: 11955881Abstract: A secondary-side protection and sense circuit for a power converter has a sensing component, an adder amplifying circuit, an electronic switch, and a charge/discharge circuit. The sensing component is connected to an output connecting terminal of the power converter. The adder amplifying circuit has an operational amplifier, a first resistor, and a second resistor. The operational amplifier has an input terminal connected to the sensing component, an output terminal connected to a primary-side control component, and a power terminal. The first resistor and the second resistor are connected in series and between the input terminal and the power terminal of the operational amplifier. The electronic switch is connected between a ground terminal and a connection node between the first resistor and the second resistor. The charge/discharge circuit is connected to the electronic switch and the power terminal of the operational amplifier.Type: GrantFiled: March 10, 2022Date of Patent: April 9, 2024Assignee: MINMAX TECHNOLOGY CO., LTDInventors: Ching-Hung Wang, Yu-Hsuan Chen
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Publication number: 20240113113Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.Type: ApplicationFiled: December 1, 2023Publication date: April 4, 2024Inventors: Chih-Chang Hung, Chia-Jen Chen, Ming-Ching Chang, Shu-Yuan Ku, Yi-Hsuan Hsiao, I-Wei Yang
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Publication number: 20240113172Abstract: A semiconductor device includes a substrate, a channel layer, a gate structure, source/drain regions, and an insulating layer. The channel layer is disposed over the substrate. The gate structure is disposed over the channel layer. The source/drain regions are disposed over the substrate and disposed at two opposite sides of the channel layer. The insulating layer is disposed between the channel layer and the source/drain regions.Type: ApplicationFiled: March 5, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Tse Hung, Meng-Zhan Li, Tzu-Chiang Chen, Chao-Ching Cheng, Iuliana Radu
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Patent number: 11948941Abstract: A semiconductor device includes a gate layer, a channel material layer, a first dielectric layer and source/drain terminals. The gate layer is disposed over a substrate. The channel material layer is disposed over the gate layer, where a material of the channel material layer includes a first low dimensional material. The first dielectric layer is between the gate layer and the channel material layer. The source/drain terminals are in contact with the channel material layer, where the channel material layer is at least partially disposed between the source/drain terminals and over the gate layer, and the gate layer is disposed between the substrate and the source/drain terminals.Type: GrantFiled: June 23, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Tse Hung, Ang-Sheng Chou, Hung-Li Chiang, Tzu-Chiang Chen, Chao-Ching Cheng
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Patent number: 11948798Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.Type: GrantFiled: July 16, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Yu Chang, Jung-Hau Shiu, Jen Hung Wang, Tze-Liang Lee
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Patent number: 11948939Abstract: An integrated circuit (IC) with active and dummy device cell arrays and a method of fabricating the same are discloses. The IC includes a substrate, an active device cell, and a dummy device cell. The active device cell includes an array of source/drain (S/D) regions of a first conductivity type disposed on or within the substrate and an array of gate structures with a first gate fill material disposed on the substrate. The dummy device cell includes a first array of S/D regions of the first conductivity type disposed on or within the substrate, a second array of S/D regions of a second conductivity type disposed on or within the substrate, and an array of dual gate structures disposed on the substrate. Each of the dual gate structures includes the first gate fill material and a second gate fill material that is different from the first gate fill material.Type: GrantFiled: May 13, 2021Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, LtdInventors: Kai-Chi Wu, Ching-Hung Kao, Meng-I Kang, Kuo-Fang Ting
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Publication number: 20240105770Abstract: Embodiments disclosed herein include transistors and methods of forming transistors. In an embodiment, a transistor comprises a source, a drain, and a pair of spacers between the source and the drain. In an embodiment, a semiconductor channel is between the source and the drain, where the semiconductor channel passes through the pair of spacers. In an embodiment, the semiconductor channel has a first thickness within the pair of spacers and a second thickness between the pair of spacers, where the second thickness is less than the first thickness. In an embodiment, the transistor further comprises a gate stack over the semiconductor channel between the pair of spacers.Type: ApplicationFiled: September 27, 2022Publication date: March 28, 2024Inventors: Tao CHU, Guowei XU, Chia-Ching LIN, Minwoo JANG, Feng ZHANG, Ting-Hsiang HUNG
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Publication number: 20240105718Abstract: Methods for fabricating an integrated circuit (IC) device with a protection liner between doped semiconductor regions are provided. An example IC device includes a channel material having a first face and a second face opposite the first face, a first doped region and a second doped region in the channel material, extending from the second face towards the first face by a first distance; and an insulator structure in a portion of the channel material between the first and second doped regions, the insulator structure extending from the second face towards the first face by a second distance greater than the first distance. The insulator structure includes a first portion between the second face and the first distance and a second portion between first distance and the second distance. The insulator structure includes a liner material on sidewalls of the first portion but absent on sidewalls of the second portion.Type: ApplicationFiled: September 22, 2022Publication date: March 28, 2024Applicant: Intel CorporationInventors: Tao Chu, Guowei Xu, Minwoo Jang, Yanbin Luo, Feng Zhang, Ting-Hsiang Hung, Chia-Ching Lin