Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

Abstract: An optical biometer includes a light-source module, a light-splitting module, a reference-arm, a sensing-arm and a sensing module. The light-source module emits incident-light. The light-splitting module, disposed corresponding to light-source module, divides the incident-light into reference light and sensing light. The reference-arm, disposed corresponding to light-splitting module, generates a first reflected-light according to the reference light. The sensing-arm, disposed corresponding to the light-splitting module, emits the sensing light to the eye and receives a second reflected-light from the eye. The sensing module generates a sensing result according to the first reflected-light and second reflected-light. In a first mode, the sensing light is emitted to a first position of the eye. In a second mode, the sensing light is emitted to a second position of the eye.

Abstract: An electrical connector and a cable grounding structure thereof are disclosed. A grounding structure is bridged between a connection body of the electrical connector and each cable, and includes a bridging portion, at least one clamping portion, at least one docking portion, and an elastic portion. The clamping portion is disposed on the bridging portion for clamping a covering layer of each cable, and the docking portion is extended from the bridging portion toward the connection body and electrically connected to connection body, and the elastic portion is attached and pressed against the covering layer of each cable, so as to provide good grounding contact and prevent the issue of skewing the cables and other factors that affects the soldering yield.

Abstract: A ballbar testing tune-up method for machine tool includes the steps of letting a machine tool system execute a ballbar test; obtaining a phase characteristic and a peak-value characteristic; creating a Lagrange interpolation polynomial and inputting a servo controller parameter, a phase characteristic and a peak-value characteristic of the machine tool system each time when executing the ballbar test, and obtaining a proposed servo parameter. This method is simple and easy without incurring additional equipment costs, but just using existing equipment to find the proposed servo parameter quickly and input it into a machine tool system, so as to improve the response issue of a servo system and reduce manufacturing contour error to enhance the working precision of the machine tool system.

Abstract: In an embodiment, a method includes: patterning a lower semiconductor nanostructure, an upper semiconductor nanostructure, and a dummy nanostructure, the dummy nanostructure disposed between the lower semiconductor nanostructure and the upper semiconductor nanostructure, the dummy nanostructure including doped silicon; forming an opening between the lower semiconductor nanostructure and the upper semiconductor nanostructure by etching the doped silicon of the dummy nanostructure; forming an isolation structure in the opening; and depositing a gate dielectric around the isolation structure, the upper semiconductor nanostructure, and the lower semiconductor nanostructure.

Abstract: A biomimetic waterfowl includes a housing, two waterfowl legs, and a driving module. The waterfowl legs are spaced apart from each other in a left-right direction and are mounted to a bottom portion of the housing. Each waterfowl leg includes a first segment mounted to the housing and rotatable about a first axis parallel to the left-right direction, and a second segment rotatable about a second axis parallel to the first axis. The driving module is mounted to the housing and is configured to drive the waterfowl legs. Each of the waterfowl legs is movable between a retracted state, where the first segment extends forwardly from the housing and the second segment extends rearwardly from the first segment, and a propelling state, where the first segment extends rearwardly from the housing and the second segment extends rearwardly from the first segment.

Abstract: A method of manufacturing a carrying substrate is provided. At least one circuit component is disposed on a first circuit structure. An encapsulation layer is formed on the first circuit structure and encapsulates the circuit component. A second circuit structure is formed on the encapsulation layer and electrically connected to the circuit component. The circuit component is embedded in the encapsulation layer via an existing packaging process. Therefore, the routing area is increased, and a package substrate requiring a large size has a high yield and low manufacturing cost.

Abstract: A biomimetic aquatic device includes a housing, a driving module, a cam, and a weight unit. The driving module is disposed in a receiving space of the housing, and includes a driving shaft rotatable about its own axis. The cam is mounted co-rotatably to the driving shaft, and has a cam groove formed in an outer surface of the cam and having at least a portion that extends spirally about the axis. The weight unit is mounted to the driving module, is movable along the axis relative to the driving module, and includes an engaging member engaging and movable along the cam groove. When the driving shaft and the cam are rotated, the weight unit moves relative to the driving module along the axis via engagement between the engaging member and the cam groove, thereby changing a center of gravity of the biomimetic aquatic device.

Abstract: A biomimetic turtle device includes a trunk unit, a limb unit and a control unit. The control unit includes a water depth sensor which detects water depth where the biomimetic turtle device is, and a circuit module which receives the signal from the water depth sensor and determines if the biomimetic turtle device is at a target water depth position, wherein a driving mechanism or a weight adjusting mechanism is operated if the biomimetic turtle device is not at the target water depth position to vary the volume or weight of the trunk unit so as to adjust density of the trunk unit to thereby adjust a water depth position of the biomimetic turtle device.

Abstract: A biomimetic fish includes a cover structure and two housing bodies arranged in a front-rear direction, connected to each other, and rotatable relative to each other about a rotating axis that extends in an up-down direction. The cover structure includes first and second cover portions respectively formed on the housing bodies. The first cover portion has two distal end parts disposed at a distal end thereof and arranged in a left-right direction. The second cover portion has two arcuate outer surfaces respectively adjacent to the distal end parts and each having a center of curvature located on the rotating axis. At least one of the arcuate outer surfaces is connected to the respective one of the distal end parts. An intersection of the arcuate outer surfaces and the respective one of the distal end parts is located at an inner side of the respective one of the distal end parts.

Abstract: An underwater robotic device includes a housing unit, a control unit and a propelling unit. The housing unit includes a base seat and an upper cover in liquid-tight engagement with the base seat. The control unit is disposed within the housing unit and includes a circuit module and a center-of-gravity transferring module which is electronically connected with the circuit module. The center-of-gravity transferring module has a movable weight member and a transfer driving mechanism which drives movement of the weight member so as to vary a position of a center of gravity of the underwater robotic device and to control downward and upward moving directions of the underwater robotic device in the water. The propelling unit is connected with the housing unit and is electronically connected with the control unit to produce a propelling force to move the underwater robotic device forward in the water.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.

Abstract: In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

Abstract: In a method of manufacturing a semiconductor device, first and second fin structures are formed over a substrate, an isolation insulating layer is formed over the substrate, a gate structure is formed over channel regions of the first and second fin structures, source/drain regions of the first and second fin structure are recessed, and an epitaxial source/drain structure is formed over the recessed first and second fin structures. The epitaxial source/drain structure is a merged structure having a merger point, and a height of a bottom of the merger point from an upper surface of the isolation insulating layer is 50% or more of a height of the channel regions of the first and second fin structures from the upper surface of the isolation insulating layer.

Abstract: A flash memory includes a linear array of flash memory cells having a source region extending along a first direction. Each flash memory cell includes a floating gate disposed adjacent the source region. The linear array of flash memory cells further includes isolation strips disposed between the floating gates of the flash memory cells. An erase gate line extends along the first direction and is disposed over the source region. A control gate line extends along the first direction and is disposed over the isolation strips and over the floating gates of the flash memory cells. The control gate line has a non-straight edge proximate to the source region that is indented away from the source region at least where the control gate line is disposed over the isolation strips.

Abstract: A semiconductor structure includes a first dielectric layer, a conductive layer over the first dielectric layer, and a first electrode over a first portion of the conductive layer. A first thickness of the first portion of the conductive layer is greater than a second thickness of a second portion of the conductive layer not under the first electrode.

Abstract: A semiconductor device includes an active gate metal structure disposed over a substrate, the active gate metal structure having a first sidewall and a second sidewall opposite to each other. The semiconductor device includes a first source/drain region disposed adjacent the first sidewall of the active gate metal structure with a first lateral distance. The semiconductor device includes a second source/drain region disposed adjacent the second sidewall of the active gate metal structure with a second lateral distance, wherein the second lateral distance is substantially greater than the first lateral distance. The semiconductor device includes a resist protective oxide (RPO) comprising a first portion extending over a portion of a major surface of the substrate that is laterally located between the second sidewall and the second source/drain region, wherein the RPO has no portion extending over a top surface of the active gate metal structure.

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

Abstract: A method and apparatus for minimizing silicon germanium facets in planar metal oxide semiconductor structures is disclosed. For example, a device fabricated according to the method may include a semiconductor substrate, a plurality of gate stacks formed on the substrate, a plurality of source/drain regions formed from silicon germanium, and a shallow trench isolation region positioned between two source/drain regions of the plurality of source/drain regions. Each source/drain region of the plurality of source/drain regions is positioned adjacent to at least one gate stack of the plurality of gate stacks. Moreover, the shallow trench isolation region forms a trench in the substrate without intersecting the two source/drain regions.

Abstract: A method of manufacturing a carrying substrate is provided. At least one circuit component is disposed on a first circuit structure. An encapsulation layer is formed on the first circuit structure and encapsulates the circuit component. A second circuit structure is formed on the encapsulation layer and electrically connected to the circuit component. The circuit component is embedded in the encapsulation layer via an existing packaging process. Therefore, the routing area is increased, and a package substrate requiring a large size has a high yield and low manufacturing cost.