Patents by Inventor Ching-Hwa Chang
Ching-Hwa Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136316Abstract: A semiconductor package includes a conductive pillar and a solder. The conductive pillar has a first sidewall and a second sidewall opposite to the first sidewall, wherein a height of the first sidewall is greater than a height of the second sidewall. The solder is disposed on and in direct contact with the conductive pillar, wherein the solder is hanging over the first sidewall and the second sidewall of conductive pillar.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chiang-Jui Chu, Ching-Wen Hsiao, Hao-Chun Liu, Ming-Da Cheng, Young-Hwa Wu, Tao-Sheng Chang
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Patent number: 8772138Abstract: A high voltage light emitting diode chip and its manufacturing method are provided. The high voltage light emitting diode chip can be manufactured by forming a plurality of light emitting diode units on a substrate and electrically connecting the light emitting diode units, wherein a trench with a width of about 0.5 ?m to about 7 ?m is present between every two adjacent light emitting diode units to isolate the light emitting diode units. The procedure for manufacturing the high voltage light emitting diode chip is simple and the high voltage light emitting diode chip that is produced can exhibit satisfying luminous efficiency.Type: GrantFiled: May 7, 2012Date of Patent: July 8, 2014Assignee: Walsin Lihwa CorporationInventors: Chih-Wei Yang, Ching-Hwa Chang Jen
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Publication number: 20140017831Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.Type: ApplicationFiled: July 17, 2013Publication date: January 16, 2014Applicant: WALSIN LIHWA CORPORATIONInventors: Chang-Chi Pan, Ching-Hwa Chang Jean, Chang-Ho Chen
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Patent number: 8597961Abstract: A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device.Type: GrantFiled: October 20, 2009Date of Patent: December 3, 2013Assignee: Walsin Lihwa CorporationInventors: Chang-Chi Pan, Ching-hwa Chang Jean, Jang-ho Chen
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Publication number: 20130214297Abstract: A high voltage light emitting diode chip and its manufacturing method are provided. The high voltage light emitting diode chip can be manufactured by forming a plurality of light emitting diode units on a substrate and electrically connecting the light emitting diode units, wherein a trench with a width of about 0.5 ?m to about 7 ?m is present between every two adjacent light emitting diode units to isolate the light emitting diode units. The procedure for manufacturing the high voltage light emitting diode chip is simple and the high voltage light emitting diode chip that is produced can exhibit satisfying luminous efficiency.Type: ApplicationFiled: May 7, 2012Publication date: August 22, 2013Applicant: WALSIN LIHWA CORPORATIONInventors: Chih-Wei YANG, Ching-Hwa CHANG JEN
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Patent number: 8513688Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.Type: GrantFiled: December 2, 2009Date of Patent: August 20, 2013Assignee: Walsin Lihwa CorporationInventors: Chang-Chi Pan, Ching-hwa Chang Jean, Jang-ho Chen
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Patent number: 8421104Abstract: A light emitting diode apparatus with enhanced luminous efficiency is disclosed in the present invention. The light emitting diode apparatus includes a light emitting diode chip for providing a first light beam; a substrate, having a cross-section of a trapezoid, for supporting the light emitting diode chip, which is transparent to the first light beam; and an encapsulating body, containing a phosphor and encapsulating the light emitting diode chip and the substrate, for fixing the light emitting diode chip and the substrate and providing a second light beam when the phosphor is excited by the first light beam. Due to the shape of the substrate, contact area of the substrate with the phosphor is enlarged. Luminous efficiency is enhanced as well.Type: GrantFiled: May 24, 2010Date of Patent: April 16, 2013Assignee: Walsin Lihwa CorporationInventors: Ming-teng Kuo, Jang-ho Chen, Ching-hwa Chang Jean
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Patent number: 8217488Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.Type: GrantFiled: July 19, 2010Date of Patent: July 10, 2012Assignee: Walsin Lihwa CorporationInventors: Shiue-Lung Chen, Jeng-Guo Feng, Jang-Ho Chen, Ching-Hwa Chang Jean
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Publication number: 20120161175Abstract: A vertical structure light emitting diode (LED) and a method of manufacturing the same are disclosed. The vertical structure LED includes a metal layer as an electrode; a number of luminescent layers formed on the metal layer for providing light beams; a spreading layer formed on the luminescent layers; a medium layer provided on the spreading layer, having an opening formed therethrough to expose the spreading layer and a roughed surface. The spreading layer facilitates diffusion of current produced by the electrode.Type: ApplicationFiled: December 27, 2010Publication date: June 28, 2012Applicant: WALSIN LIHWA CORPORATIONInventors: Shiue-Lung CHEN, Jeng-Guo Feng, Cang-Ho Chen, Ching-Hwa Chang Jean
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Publication number: 20120129283Abstract: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N2/H2 concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.Type: ApplicationFiled: January 30, 2012Publication date: May 24, 2012Applicant: WALSIN LIHWA CORPORATIONInventors: CHANG-CHI PAN, CHING-HWA CHANG JEAN, Changho CHEN
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Patent number: 8153455Abstract: A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second layer of a second conduction type opposite to the first conduction type; growing a number of protrusions on at least one layer selected from the first layer, the active layer, and the second layer of the light emitting diode to form a patterned oxide layer for protecting the light emitting diode from etch; controlling height of the protrusions to achieve a predetermined etching depth of the light emitting diode; dry etching through a portion of the light emitting diode which is not protected by the patterned oxide layer to form a plurality of depressions on the light emitting diode; and removing the oxide layer from the selected layer. The light emitting diode is patterned so that more light beams can be emitted.Type: GrantFiled: February 1, 2010Date of Patent: April 10, 2012Assignee: Walsin Lihwa CorporationInventors: Ming-Teng Kuo, Jang-Ho Chen, Ching-Hwa Chang Jean
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Patent number: 8129728Abstract: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N2/H2 concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.Type: GrantFiled: October 22, 2009Date of Patent: March 6, 2012Assignee: Walsin Lihwa CorporationInventors: Chang-Chi Pan, Ching-hwa Chang Jean, Jang-ho Chen
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Publication number: 20120049179Abstract: A method for enhancing light extraction efficiency of a group-III nitride-based light emitting device is disclosed. By roughening a n-type group-III nitride-based cladding layer or an undoped group-III nitride-based layer, a reflecting layer is formed. Because of gaps on the roughened surface, total internal reflection occurs, and light beams can be reflected back to a top surface of the light emitting device. Thus, the light extraction efficiency can be increased, and more light beams can be collected in a desired direction.Type: ApplicationFiled: August 25, 2010Publication date: March 1, 2012Applicant: WALSIN LIHWA CORPORATIONInventors: Ming-teng KUO, Jang-ho Chen, Ching-hwa Chang Jean
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Publication number: 20120012856Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.Type: ApplicationFiled: July 19, 2010Publication date: January 19, 2012Applicant: WALSIN LIHWA CORPORATIONInventors: Shiue-Lung CHEN, Jeng-Guo Feng, Jang-Ho Chen, Ching-Hwa Chang Jean
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Patent number: 8071401Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.Type: GrantFiled: December 10, 2009Date of Patent: December 6, 2011Assignee: Walsin Lihwa CorporationInventors: Shiue-Lung Chen, Jeng-Kuo Feng, Ching-Hwa Chang Jean, Jang-Ho Chen
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Publication number: 20110284892Abstract: A light emitting diode apparatus with enhanced luminous efficiency is disclosed in the present invention. The light emitting diode apparatus includes a light emitting diode chip for providing a first light beam; a substrate, having a cross-section of a trapezoid, for supporting the light emitting diode chip, which is transparent to the first light beam; and an encapsulating body, containing a phosphor and encapsulating the light emitting diode chip and the substrate, for fixing the light emitting diode chip and the substrate and providing a second light beam when the phosphor is excited by the first light beam. Due to the shape of the substrate, contact area of the substrate with the phosphor is enlarged. Luminous efficiency is enhanced as well.Type: ApplicationFiled: May 24, 2010Publication date: November 24, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Ming-teng KUO, Jang-ho CHEN, Ching-hwa CHANG JEAN
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Publication number: 20110189802Abstract: A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second layer of a second conduction type opposite to the first conduction type; growing a number of protrusions on at least one layer selected from the first layer, the active layer, and the second layer of the light emitting diode to form a patterned oxide layer for protecting the light emitting diode from etch; controlling height of the protrusions to achieve a predetermined etching depth of the light emitting diode; dry etching through a portion of the light emitting diode which is not protected by the patterned oxide layer to form a plurality of depressions on the light emitting diode; and removing the oxide layer from the selected layer. The light emitting diode is patterned so that more light beams can be emitted.Type: ApplicationFiled: February 1, 2010Publication date: August 4, 2011Inventors: Ming-Teng KUO, Jang-Ho Chen, Ching-Hwa Chang Jean
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Publication number: 20110143466Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.Type: ApplicationFiled: December 10, 2009Publication date: June 16, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Shiue-Lung CHEN, Jeng-Kuo Feng, Ching-Hwa Chang Jean, Jang-Ho Chen
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Publication number: 20110127551Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.Type: ApplicationFiled: December 2, 2009Publication date: June 2, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Chang-Chi Pan, Ching-Hwa Chang Jean, Jang-Ho Chen
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Publication number: 20110095314Abstract: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N2/H2 concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.Type: ApplicationFiled: October 22, 2009Publication date: April 28, 2011Applicant: WALSIN LIHWA CORPORATIONInventors: Chang-Chi Pan, Ching-Hwa Chang Jean, Jang-Ho Chen