Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract: A nano-patterned membrane electrode assembly (MEA) is provided, which includes an electrolyte membrane layer having a three-dimensional close-packed array of hexagonal-pyramids, a first porous electrode layer, disposed on a top surface of the electrolyte membrane layer that conforms to a top surface-shape of the three-dimensional close-packed array of hexagonal-pyramids, and a second porous electrode layer disposed on a bottom surface of said electrolyte membrane layer that conforms to a bottom surface-shape of the three-dimensional close-packed array of hexagonal-pyramids, where a freestanding nano-patterned MEA is provided.

Abstract: A method for forming a substrate comprising nanometer-scale pillars or cones that project from the surface of the substrate is disclosed. The method enables control over physical characteristics of the projections including diameter, sidewall angle, and tip shape. The method further enables control over the arrangement of the projections including characteristics such as center-to-center spacing and separation distance.

Abstract: A method for forming a substrate comprising nanometer-scale pillars or cones that project from the surface of the substrate is disclosed. The method enables control over physical characteristics of the projections including diameter, sidewall angle, and tip shape. The method further enables control over the arrangement of the projections including characteristics such as center-to-center spacing and separation distance.

Abstract: An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

Abstract: A nano-patterned membrane electrode assembly (MEA) is provided, which includes an electrolyte membrane layer having a three-dimensional close-packed array of hexagonal-pyramids, a first porous electrode layer, disposed on a top surface of the electrolyte membrane layer that conforms to a top surface-shape of the three-dimensional close-packed array of hexagonal-pyramids, and a second porous electrode layer disposed on a bottom surface of said electrolyte membrane layer that conforms to a bottom surface-shape of the three-dimensional close-packed array of hexagonal-pyramids, where a freestanding nano-patterned MEA is provided.

Abstract: The current invention provides a method of fabricating nano-pore structured dense Pt electrodes using particle masking and LB deposition methods. The pore size and TPB density are easily tunable by changing initial size of the masking silica particles and the spacing between them. Compared to the solid oxide fuel cell MEAs with porous Pt electrode deposited by conventional DC sputtering method, fuel cell MEAs with the nano structured electrodes fabricated according to the current invention showed thermal and microstructural stability and superior I-V performance at 400˜450° C. Also, EIS spectra showed significant improvement in the oxygen reduction kinetics by increasing the density of charge transfer sites at the TPB. A nearly linear scaling relationship between TPB density and fuel cell performance was also demonstrated.

Abstract: A gas-burned glue gun includes a gun body holding a heating unit and a melting unit, and a handle holding a fuel gas tank and a gas valve, the heating unit having a nozzle tube connected to the gas valve, an electronic igniter, a flame nozzle connected the nozzle tube, an ignition button, a wire electrode connected between the electronic igniter and the flame nozzle, a gas tube connected between the nozzle tube and the flame nozzle, a piston ring moved to close/open an air port on the gas tube, the melting unit having a heat conductive glue stick tube adapted to hold a glue stick, the heat conductive glue stick tube having a heat accumulating portion protected by a guard and disposed adjacent to the flame nozzle, and a catalyzer mounted in the heat accumulating portion, wherein when the ignition button is pressed on, the electronic igniter is triggered to produce sparks in igniting discharged fuel gas from the flame nozzle, and a flame is produced to heat the catalyzer, causing the catalyzer to produce a heat