Abstract: A method for automatic inline detection and wafer disposition includes the following steps. An exposure process is performed to wafers in an exposure apparatus. A virtual inspection is performed based on log files of the exposure process. A wafer automatic disposition is performed according to a result of the virtual inspection. An automatic inline detection and wafer disposition system includes a first computer system coupled to an exposure apparatus and a second computer system coupled to the first computer system. The exposure apparatus is configured to perform an exposure process to wafers, and the first computer system is configured to perform a virtual inspection based on log files of the exposure process. The second computer system is configured to receive a result of the virtual inspection and perform a wafer automatic disposition according to the result of the virtual inspection.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: An aspect includes receiving a request to access data in a memory, the request from a requesting processor and including a virtual address of the data. It is determined, based on contents of a page table that a plurality of physical addresses in the memory corresponds to the virtual address. The physical addresses include a first physical address of a primary memory location in a first partition accessed via a bus that is communicatively coupled to a port of a first processor, and a second physical address of a secondary memory location in a second partition accessed via a bus that is communicatively coupled to a port of a second processor. Contents of the primary memory location in the first partition were previously copied into the secondary memory location. Based on the requesting processor, one of the physical addresses is selected and data at the selected physical address is accessed.

Abstract: An aspect includes receiving a request to access data in a memory, the request from a requesting processor and including a virtual address of the data. It is determined, based on contents of a page table that a plurality of physical addresses in the memory corresponds to the virtual address. The physical addresses include a first physical address of a primary memory location in a first partition accessed via a bus that is communicatively coupled to a port of a first processor, and a second physical address of a secondary memory location in a second partition accessed via a bus that is communicatively coupled to a port of a second processor. Contents of the primary memory location in the first partition were previously copied into the secondary memory location. Based on the requesting processor, one of the physical addresses is selected and data at the selected physical address is accessed.

Abstract: An apparatus for controlling an operation of a machine includes an optical recognition system, a control unit, and a remote control interface. The optical recognition system is configured to monitor and obtain actual operation information displayed on a panel of a processing machine in accordance with an operation time. The control unit is configured to receive the actual operation information and check the actual operation information with expected operation information. The expected operation information is obtained based on an operation model which is already built up corresponding to a current fabrication process. Deviation information between the actual operation information and the expected operation information is determined and converted into a parameter set. The remote control interface receives the parameter set and converts the parameter set into a control signal set to control the operation of the processing machine.

Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Abstract: Embodiments include method, systems and computer program products for fusing one or more transaction request messages. The computer-implemented method includes comparing, using a memory controller, at least two electronic transaction request messages and determining if the at least two electronic transaction request messages are of a same electronic transaction request message type. The memory controller is used to determine that the at least two electronic transaction request messages are directed to associated portions of memory based at least in part on determining that the at least two electronic transaction request messages are the same electronic transaction request message type. The memory controller fuses the at least two electronic transaction request messages based at least in part on determining that the at least two electronic transaction request messages are directed to associated portions of memory.

Abstract: An apparatus for controlling an operation of a machine includes an optical recognition system, a control unit, and a remote control interface. The optical recognition system is configured to monitor and obtain actual operation information displayed on a panel of a processing machine in accordance with an operation time. The control unit is configured to receive the actual operation information and check the actual operation information with expected operation information. The expected operation information is obtained based on an operation model which is already built up corresponding to a current fabrication process. Deviation information between the actual operation information and the expected operation information is determined and converted into a parameter set. The remote control interface receives the parameter set and converts the parameter set into a control signal set to control the operation of the processing machine.

Abstract: Embodiments of the invention include method, systems and computer program products for servicing indirect storage requests. Method includes decoding a storage request instruction and sending to a first one of a plurality of memory controllers an address represented by a first pointer associated with at least a portion of the storage request instruction. A first memory is used to read information associated with a second pointer contained at the address. The first memory forwards the storage request instruction to a second one of the plurality of memory controllers, wherein the second one of the plurality of memory controllers is associated with and/or manages a memory location represented by the second pointer. The second one of the plurality of memory controllers reads and forwards data associated with the storage request instruction to a processor using the second pointer. The processor writes the forwarded data in a destination register of the processor.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A method for automatic inline detection and wafer disposition includes the following steps. An exposure process is performed to wafers in an exposure apparatus. A virtual inspection is performed based on log files of the exposure process. A wafer automatic disposition is performed according to a result of the virtual inspection. An automatic inline detection and wafer disposition system includes a first computer system coupled to an exposure apparatus and a second computer system coupled to the first computer system. The exposure apparatus is configured to perform an exposure process to wafers, and the first computer system is configured to perform a virtual inspection based on log files of the exposure process. The second computer system is configured to receive a result of the virtual inspection and perform a wafer automatic disposition according to the result of the virtual inspection.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Abstract: An aspect includes receiving a request to access data in a memory, the request from a requesting processor and including a virtual address of the data. It is determined, based on contents of a page table that a plurality of physical addresses in the memory corresponds to the virtual address. The physical addresses include a first physical address of a primary memory location in a first partition accessed via a bus that is communicatively coupled to a port of a first processor, and a second physical address of a secondary memory location in a second partition accessed via a bus that is communicatively coupled to a port of a second processor. Contents of the primary memory location in the first partition were previously copied into the secondary memory location. Based on the requesting processor, one of the physical addresses is selected and data at the selected physical address is accessed.

Abstract: An aspect includes receiving a request to access data in a memory, the request from a requesting processor and including a virtual address of the data. It is determined, based on contents of a page table that a plurality of physical addresses in the memory corresponds to the virtual address. The physical addresses include a first physical address of a primary memory location in a first partition accessed via a bus that is communicatively coupled to a port of a first processor, and a second physical address of a secondary memory location in a second partition accessed via a bus that is communicatively coupled to a port of a second processor. Contents of the primary memory location in the first partition were previously copied into the secondary memory location. Based on the requesting processor, one of the physical addresses is selected and data at the selected physical address is accessed.

Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

Abstract: A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.

Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.