Patents by Inventor Ching-Pei Lin
Ching-Pei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9685588Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.Type: GrantFiled: March 29, 2016Date of Patent: June 20, 2017Assignee: Epistar CorporationInventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
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Publication number: 20170033259Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.Type: ApplicationFiled: October 17, 2016Publication date: February 2, 2017Inventors: Chih-Chiang LU, Yi-Ming CHEN, Chun-Yu LIN, Ching-Pei LIN, Chung-Hsun CHIEN, Chien-Fu HUANG, Hao-Min KU, Min-Hsun HSIEH, Tzu-Chieh HSU
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Patent number: 9508894Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.Type: GrantFiled: July 29, 2013Date of Patent: November 29, 2016Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Ming Chen, Chun-Yu Lin, Ching-Pei Lin, Chung-Hsun Chien, Chien-Fu Huang, Hao-Min Ku, Min-Hsun Hsieh, Tzu-Chieh Hsu
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Publication number: 20160211414Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.Type: ApplicationFiled: March 29, 2016Publication date: July 21, 2016Inventors: Wen-Luh LIAO, Shao-Ping LU, Hung-Ta CHENG, Shih-I CHEN, Chia-Liang HSU, Shou-Chin WEI, Ching-Pei LIN, Yu-Ren PENG, Chien-Fu HUANG, Wei-Yu CHEN, Chun-Hsien CHANG
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Publication number: 20160204305Abstract: A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.Type: ApplicationFiled: July 3, 2013Publication date: July 14, 2016Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
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Publication number: 20160163917Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.Type: ApplicationFiled: July 29, 2013Publication date: June 9, 2016Applicant: EPISTAR CORPORATIONInventors: Chih-Chiang LU, Yi-Ming CHEN, Chun-Yu LIN, Ching-Pei LIN, Chung-Hsun CHIEN, Chien-Fu HUANG, Hao-Min KU, Min-Hsun HSIEH, Tzu-Chieh HSU
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Patent number: 9331247Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.Type: GrantFiled: May 23, 2014Date of Patent: May 3, 2016Assignee: Epistar CorporationInventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Chen, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
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Patent number: 9276164Abstract: A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile.Type: GrantFiled: November 26, 2012Date of Patent: March 1, 2016Assignee: EPISTAR CORPORATIONInventors: Tzu Chieh Hsu, Ching-Pei Lin, Yen Ming Hsu, Shou-Chin Wei
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Patent number: 9087967Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.Type: GrantFiled: April 3, 2013Date of Patent: July 21, 2015Assignee: EPISTAR CORPORATIONInventors: Shih-I Chen, Tsung-Xian Lee, Yi-Ming Chen, Wei-Yu Chen, Ching-Pei Lin, Min-Hsun Hsieh, Cheng-Nan Han, Tien-Yang Wang, Hsing-Chao Chen, Hsin-Mao Liu, Zong-Xi Chen, Tzu-Chieh Hsu, Chien-Fu Huang, Yu-Ren Peng
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Publication number: 20150155444Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.Type: ApplicationFiled: December 22, 2014Publication date: June 4, 2015Inventors: Shih-I CHEN, Wei-Yu CHEN, Yi-Ming CHEN, Ching-Pei LIN, Tsung-Xian LEE
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Patent number: 9006774Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.Type: GrantFiled: July 1, 2013Date of Patent: April 14, 2015Assignee: Epistar CorporationInventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Chien-Fu Huang, Ching-Pei Lin
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Patent number: 8916884Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending porType: GrantFiled: March 28, 2013Date of Patent: December 23, 2014Assignee: Epistar CorporationInventors: Shih-I Chen, Wei-Yu Chen, Yi-Ming Chen, Ching-Pei Lin, Tsung-Xian Lee
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Publication number: 20140346544Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.Type: ApplicationFiled: May 23, 2014Publication date: November 27, 2014Applicant: EPISTAR CORPORATIONInventors: Wen-Luh LIAO, Shao-Ping LU, Hung-Ta CHEN, Shih-I CHEN, Chia-Liang HSU, Shou-Chin WEI, Ching-Pei LIN, Yu-Ren PENG, Chien-Fu HUANG, Wei-Yu CHEN, Chun-Hsien CHANG
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Patent number: 8765504Abstract: A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.Type: GrantFiled: June 7, 2012Date of Patent: July 1, 2014Assignee: EPISTAR CorporationInventors: Shih-I Chen, Ching-Pei Lin, Tzu-Chieh Hsu, Chia-Liang Hsu
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Publication number: 20140145224Abstract: A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile.Type: ApplicationFiled: November 26, 2012Publication date: May 29, 2014Applicant: Epistar corporationInventors: Tzu Chieh Hsu, Ching-Pei Lin, Yen Ming Hsu, Shou-Chin Wei
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Publication number: 20140014994Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.Type: ApplicationFiled: July 1, 2013Publication date: January 16, 2014Inventors: Shih-I Chen, CHIA-LIANG HSU, Tzu-Chieh Hsu, Chun-Yi Wu, Chien-Fu Huang, Ching-Pei Lin
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Publication number: 20130256729Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending porType: ApplicationFiled: March 28, 2013Publication date: October 3, 2013Applicant: EPISTAR CORPORATIONInventors: Shih-I CHEN, Wei-Yu CHEN, Yi-Ming CHEN, Ching-Pei LIN, Tsung-Xian LEE
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Publication number: 20120313249Abstract: A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.Type: ApplicationFiled: June 7, 2012Publication date: December 13, 2012Inventors: Shih-I CHEN, Ching-Pei Lin, Tzu-Chieh Hsu, Chia-Liang Hsu