Abstract: A method of forming a device, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer The wafer is placed upon the wafer holder and is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of a metal barrier layer. The exposed portions of the metal barrier layer are etched and removed, exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.

Abstract: A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer.

Abstract: Superalloys containing uniform dispersions of at least 0.1 volume percent of a metal nitride improve qualities of superalloys. These superalloys are produced from superalloy powders by a nitridng process utilizing a controlled atmosphere for controlled times at controlled temperature. A nitriding temperature of at least 700.degree. C is required in order to produce effective amounts of nitride in practical lengths of time.

Abstract: Superalloys containing uniform dispersions of at least 0.1 volume percent of a metal nitride improve qualities of superalloys. These superalloys are produced from superalloy powders by a nitriding process utilizing a controlled atmosphere for controlled times at controlled temperature. A nitriding temperature of at least 700.degree. C is required in order to produce effective amounts of nitride in practical lengths of time. SPCROSS REFERENCE TO RELATED APPLICATIONThis application is a division of Ser. No. 343,873, filed: Mar. 22, 1973 now abandoned, which is a continuation of Ser. No. 146,198, filed: Mar. 24, 1971 now abandoned, both applications being assigned to the assignee of the present invention.