Abstract: A light-emitting device includes a light-emitting element, a wavelength conversion layer and a light pervious element. The light-emitting element includes a top surface, a bottom surface, a plurality of side surfaces connecting to the top surface and the bottom surface, and a first electrical contact formed on the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element to form a first thickness, has an average thickness, and includes a transparent binder and a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a light exiting surface and is disposed on the wavelength conversion layer. The D50 of the wavelength conversion particles is not great than 10 ?m. A ratio of the average thickness to the D50 of the wavelength conversion layer is ranged from 6 to 20.

Abstract: A light-emitting device includes a light body having an internal electrode layer, and a conductive layer. The conductive layer has a first portion formed on the internal electrode layer and overlapping the light body in a first direction, and a second portion overlapping the light body in a second direction. The first direction is perpendicular to the second direction.

Abstract: A light-emitting device includes a light-emitting element, a cover layer, and an anti-adhesion layer. The light-emitting element has a top surface, a bottom surface and a side surface. The cover layer covers the light-emitting element and includes a first transparent binder. The anti-adhesion layer includes a flouro-resin or a fluoride compound and disposed on the cover layer and the top surface as an outermost layer of the light-emitting device. The anti-adhesion layer has a hardness greater than a hardness of the cover layer.

Abstract: A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. The covering layer covers the light-emitting element and contacts the adhesion enhancing layer. Moreover, the adhesion enhancing layer includes an oxide and a thickness greater than 5 nm and less than 1000 nm.

Abstract: A light-emitting device includes a light-emitting element, a light pervious layer, an electrode defining layer, a first soldering pad and a second soldering pad. The light-emitting element has an upper surface, a bottom surface, and a lateral surface arranged between the upper surface and the bottom surface. The light pervious layer covers the upper surface and the lateral surface. The electrode defining layer covers a part of the light pervious layer. The first soldering pad and the second soldering pad are surrounded by the electrode defining layer. A gap is located between the first soldering pad and the second soldering pad while the gap remains substantially constant.

Abstract: A light-emitting device includes a light-emitting element, a wavelength converting layer and a light-adjusting layer. The light-emitting element has a first upper surface, a bottom surface, and a lateral surface between the first upper surface and the bottom surface. The wavelength converting layer includes a plurality of wavelength converting particles, and has a second upper surface on the first upper surface. The light-adjusting layer surrounds the lateral surface and has a first composition or a second composition. The first composition includes a first binder and a plurality of first light-diffusing particles. The second composition includes a second binder, a plurality of second light-diffusing particles, and a plurality of light-scattering particles.

Abstract: A light-emitting device includes a light-emitting element, a cover layer, and an anti-adhesion layer. The light-emitting element has a top surface, a bottom surface and a first side surface. The cover layer covers the light-emitting element and includes a first transparent binder and a plurality of wavelength conversion particles dispersed within the first transparent binder. The anti-adhesion layer includes a fluoro-containing material, and is disposed on the cover layer and the top surface.

Abstract: This disclosure discloses a light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit.

Abstract: A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. The covering layer covers the light-emitting element and contacts the adhesion enhancing layer. Moreover, the adhesion enhancing layer includes an oxide and a thickness greater than 5 nm and less than 1000 nm.

Abstract: An embodiment of present disclosure discloses a light-emitting device which includes a light-emitting unit, a transparent covering structure, a first reflective structure, a second reflective structure, and a wavelength conversion structure. The light-emitting unit includes a light-emitting surface, a bottom surface opposite to the light-emitting surface, a side surface, a first conductive electrode, and a second conductive electrode. The first conductive electrode and the second conductive electrode are located on the bottom surface. The transparent covering structure covers the light-emitting surface and the side surface. The first reflective structure surrounds the transparent covering structure. The second reflective structure is disposed under the first reflective structure and surrounds the first conductive electrode and the second conductive electrode. The wavelength conversion structure is disposed on the first reflective structure and the transparent covering structure.

Abstract: A light-emitting device includes a light-emitting element, a wavelength conversion layer and a light pervious element. The light-emitting element includes a top surface, a bottom surface, a plurality of side surfaces connecting to the top surface and the bottom surface, and a first electrical contact formed on the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element to form a first thickness, has an average thickness, and includes a transparent binder and a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a light exiting surface and is disposed on the wavelength conversion layer. The D50 of the wavelength conversion particles is not great than 10 ?m. A ratio of the average thickness to the D50 of the wavelength conversion layer is ranged from 6 to 20.

Abstract: A light-emitting device includes a light-emitting element, a cover layer, and an anti-adhesion layer. The light-emitting element has a top surface, a bottom surface and a first side surface. The cover layer covers the light-emitting element and includes a first transparent binder and a plurality of wavelength conversion particles dispersed within the first transparent binder. The anti-adhesion layer includes a fluoro-containing material, and is disposed on the cover layer and the top surface.

Abstract: A light-emitting device includes a light-emitting element and a wavelength conversion layer. The light-emitting element has a top surface, a bottom surface, a side surface, and a first electrical contact formed on the bottom surface. The distance between the top surface and the bottom surface has a first height (h1). The wavelength conversion layer has a first area (A1) located on the top surface of the light-emitting element and a second area (A2) located on the side surfaces and surrounding the first area. The first area has a second height (h2). The second area has a third height (h3) and a second width (w2). The second height (h2) is greater than the second width (w2). The difference of the third height and the sum of the first height and the second height is less than 15 ?m.

Abstract: A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.

Abstract: A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.

Abstract: A solid state light module incorporating light emitting diodes (LEDs) disposed on a metal substrate, a solid state lighting system employing such modules, and method of replacing LEDs of the light modules are provided. The metal substrate may allow for lower LED junction temperature and, hence, a longer device lifetime. In addition, the metal substrate may allow for the potential omission of a heat sink, which may reduce light module size, when compared to conventional solid state light emitters.

Abstract: A thermal interface material (10) includes 100 parts by weight of a silicone oil (11) and 800˜1200 parts by weight of a metal powder (12) mixed into the silicone oil. An outer surface of each metal particle (121) of the metal powder is coated with a metal oxide layer (122). A method of producing the thermal interface material includes steps of: (1) applying a layer of organo coupling agent on the metal powder; (2) heating the metal powder at a temperature between 200 to 300° C. to coat a metal oxide layer on an outer surface of the metal powder; and (3) adding the metal powder with the coated metal oxide layer to a silicone oil. The thermal interface material has an excellent thermal conductivity and an excellent electrical insulating property.

Abstract: A bearing system includes a bearing, a shaft extending in the bearing, and a layer of nano-structured coating coated on one of the bearing and the shaft. A space is formed between the bearing and the shaft, and a lubricant is filled in the space. The lubricant is made of polymer material with hydrophilic and hydropholic properties. The nano-structured coating has a high surface tension which results in the coating being capable of adsorbing the lubricant to form a layer of lubricant film between the coating and the other of the bearing and the shaft, thereby reducing possibility of direct contact between the lubricant and the other of the shaft and the bearing. Thus, loss of the lubricant is reduced to avoid contacting frication between the shaft and the bearing. Accordingly, noise generated by the bearing system is decreased and life of the bearing system is extended.

Abstract: A thermal interface material includes 100 parts by weight of base oil including amino-modified silicone fluid and at least one of methylphenylsilicone fluid and fluorosilicone fluid, and 800 to 1200 parts by weight of fillers filled in the base oil. The fillers have an average particle size of 0.1 to 5 um and are selected from the group consisting of zinc oxide powder, alumina powder and metallic aluminum powder.

Abstract: A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.