Abstract: The present invention provides a polymer composition for fibers or non-woven fabrics, comprising a vinyl aromatic based copolymer and 0 to 30 wt % of an olefin based polymer based on the total weight of the polymer composition. The vinyl aromatic copolymer is represented by a formula A1-B-A2, wherein block A1 and block A2 are the same or different vinyl aromatic blocks, block A1 or block A2 having 3,800 to 4,800 of a peak molecular weight, and block B is a hydrogenated conjugated diene block. A vinyl structure content of a conjugated diene monomer content in the vinyl aromatic based copolymer is from 32 wt % to 50 wt %; and a melt flow index (MFI) of the vinyl aromatic based copolymer is 20 g/10 min˜60 g/10 min (230° C., 2.16 kg). The present invention also provides the fibers or the non-woven fabrics made from the polymer composition.

Abstract: A catalyst composition for selectively hydrogenating a conjugated diene polymer in a homogeneous system is provided, wherein the conjugated diene polymer comprises a conjugated diene monomer or a combination of a conjugated diene monomer and a vinyl aromatic monomer. The catalyst composition includes the catalyst components of (a) a titanium compound; (b) an organometallic compound; and (c) an oligomer containing a polyglycol segment. The hydrogenated polymer produced using the catalyst composition and the method thereof is also provided.

Abstract: The present invention provides a polymer composition for pressure sensitive adhesives or films thereof. The polymer composition comprises 20-40 parts by weight of a tackifier; and 60-80 parts by weight of a polymer, wherein the polymer and the tackifier are 100 parts by weight. The polymer comprises at least a first vinyl aromatic based copolymer formed by polymerization of vinyl aromatic monomer and conjugated diene monomer, wherein a vinyl aromatic monomer content of the first vinyl aromatic based copolymer is 16 wt %˜28 wt %, a vinyl structure content of a conjugated diene monomer content in the first vinyl aromatic based copolymer is 32 wt %˜50 wt %; and a melt flow index (MFI) of the first vinyl aromatic based copolymer is 20 g/10 min˜60 g/10 min (230° C., 2.16 kg). The present invention also provides the pressure sensitive adhesives or films made from the polymer composition.

Abstract: The present invention provides a polymer composition for fibers or non-woven fabrics, comprising a vinyl aromatic based copolymer and 0 to 30 wt % of an olefin based polymer based on the total weight of the polymer composition. The vinyl aromatic copolymer is represented by a formula A1-B-A2, wherein block A1 and block A2 are the same or different vinyl aromatic blocks, block A1 or block A2 having 3,800 to 4,800 of a peak molecular weight, and block B is a hydrogenated conjugated diene block. A vinyl structure content of a conjugated diene monomer content in the vinyl aromatic based copolymer is from 32 wt % to 50 wt %; and a melt flow index (MFI) of the vinyl aromatic based copolymer is 20 g/10 min˜60 g/10 min (230° C., 2.16 kg). The present invention also provides the fibers or the non-woven fabrics made from the polymer composition.

Abstract: A thermoplastic elastomer composition for crosslinked foam and the manufacturing method thereof are provided. The thermoplastic elastomer composition comprising (A) an ethylene-based copolymer; (B) a first copolymer; (C) a second copolymer, wherein the component (B) and (C) are copolymers comprising a vinyl aromatic monomer and a conjugated diene monomer, the first copolymer having a conjugated diene hydrogenation rate of at least 80% and the second copolymer having a conjugated diene hydrogenation rate of no more than 10%; (D) an organic peroxide; and (E) a foaming agent, wherein a mass ratio (A/(B+C)) of the component (A) to a combination of the component (B) and the component (C) is 95/5 to 5/95; and a mass ratio (B/C) of the component (B) to the component (C) is 9/1 to 1/9. A crosslinked foam made from the composition and the manufacturing method thereof are also provided.

Abstract: A catalyst composition for selectively hydrogenating a conjugated diene polymer in a homogeneous system is provided, wherein the conjugated diene polymer comprises a conjugated diene monomer or a combination of a conjugated diene monomer and a vinyl aromatic monomer. The catalyst composition includes the catalyst components of (a) a titanium compound; (b) an organometallic compound; and (c) an oligomer containing a polyglycol segment. The hydrogenated polymer produced using the catalyst composition and the method thereof is also provided.

Abstract: A catalyst composition for selectively hydrogenating a conjugated diene polymer in a homogeneous system is provided, wherein the conjugated diene polymer comprises a conjugated diene monomer or a combination of a conjugated diene monomer and a vinyl aromatic monomer. The catalyst composition includes the catalyst components of (a) a titanium compound; (b) an organometallic compound; and (c) an oligomer containing a polyglycol segment. The hydrogenated polymer produced using the catalyst composition and the method thereof is also provided.

Abstract: A thermoplastic elastomer composition for crosslinked foam and the manufacturing method thereof are provided. The thermoplastic elastomer composition comprising (A) an ethylene-based copolymer; (B) a first copolymer; (C) a second copolymer, wherein the component (B) and (C) are copolymers comprising a vinyl aromatic monomer and a conjugated diene monomer, the first copolymer having a conjugated diene hydrogenation rate of at least 80% and the second copolymer having a conjugated diene hydrogenation rate of no more than 10%; (D) an organic peroxide; and (E) a foaming agent, wherein a mass ratio (A/(B+C)) of the component (A) to a combination of the component (B) and the component (C) is 95/5 to 5/95; and a mass ratio (B/C) of the component (B) to the component (C) is 9/1 to 1/9. A crosslinked foam made from the composition and the manufacturing method thereof are also provided.

Abstract: A catalyst composition for selectively hydrogenating a conjugated diene polymer in a homogeneous system is provided, wherein the conjugated diene polymer comprises a conjugated diene monomer or a combination of a conjugated diene monomer and a vinyl aromatic monomer. The catalyst composition includes the catalyst components of (a) a titanium compound; (b) an organometallic compound; and (c) an oligomer containing a polyglycol segment. The hydrogenated polymer produced using the catalyst composition and the method thereof is also provided.

Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: An ink composition, a thin film solar cell and method for forming the thin film solar cell are disclosed. The ink composition includes a solvent system, a source of Cu, a source of Zn, a source of Sn, a source of S and/or Se, and a source of group III element, wherein the ink composition is adapted in forming a I-II-IV-VI thin film solar cell to increase a fill factor of the I-II-IV-VI thin film solar cell.

Abstract: A thin film chalcogenide photovoltaic device and method for forming the same are disclosed. The thin film chalcogenide photovoltaic device includes a first electrode, a second electrode and an active layer disposed between the first electrode and the second electrode, wherein the active layer includes a p-type chalcogenide semiconductor layer, an n-type inorganic semiconductor layer, and an n-type carbon-containing material layer formed between the p-type chalcogenide semiconductor layer and the n-type inorganic semiconductor layer.

Abstract: A photovoltaic device including a CZTS absorber layer and method for manufacturing the same are disclosed. The photovoltaic device includes a substrate, a bottom electrode, an absorber layer formed on the bottom electrode, a buffer layer formed on the absorber layer and a top electrode layer formed on the buffer layer. The absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region. Both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0<a<1, 0<b<1, 0?c?1 and a Zn/Sn ratio of the first region is higher than that of the second region.

Abstract: A method for forming a chalcogenide semiconductor film and a photovoltaic device using the chalcogenide semiconductor film are disclosed. The method includes steps of coating a precursor solution to form a layer on a substrate and annealing the layer to form the chalcogenide semiconductor film. The precursor solution includes a solvent, metal chalcogenide nanoparticles and at least one of metal ions and metal complex ions which are distributed on surfaces of the metal chalcogenide nanoparticles. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: An ink composition includes a solvent system, a plurality of metal chalcogenide nanoparticles, at least one of metal ions and metal complex ions and a sodium source. The at least one of the metal ions and the metal complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent system. The sodium source is dispersed in the solvent system and/or is included in at least one of the metal chalcogenide nanoparticle, the metal ions and the metal complex ions. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III, group IV elements of periodic table, and sodium and include all metal elements of a chalcogenide semiconductor material.

Abstract: An organic solar cell is provided. The organic solar cell includes a substrate, a first electrode, a second electrode and a photoelectric conversion layer. The first electrode is disposed on the substrate. The second electrode is disposed on the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The photoelectric conversion layer contains a fully conjugated block copolymer including a block having an electron withdrawing group and a block having an electron donating group.

Abstract: The invention discloses soluble polythiophene derivatives containing highly coplanar repeating units. The coplanar characteristic of side chain conjugated thiophene units improves the degree of the intramolecular conjugation and intermolecular ?-? interaction. The polythiophene derivative exhibits good carrier mobility and is suitable for use in photo-electronic device such as organic thin film transistors (OTFT), organic light-emitting diodes (OLEDs), and organic solar cells (OSCs).