Abstract: The present application provides a memory device having a bit line (BL) with a stepped profile. The memory device includes a semiconductor substrate including a first surface; and a bit line disposed on the first surface of the semiconductor substrate, wherein the bit line includes a first dielectric layer, a conductive layer disposed over the first dielectric layer, a second dielectric layer disposed over the conductive layer, and a spacer surrounding the first dielectric layer, the conductive layer and the second dielectric layer, wherein the second dielectric layer includes a first portion surrounded by the spacer, and a second portion disposed over the first portion and exposed through the spacer, wherein a first width of the first portion is substantially greater than a second width of the second portion.

Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.

Abstract: The disclosure provides a display panel including a substrate, an active layer, a first electrode layer, a common electrode layer, a cathode layer, and a spacer. The active layer is located on the substrate. The first electrode layer is located on the active layer, and the first electrode layer includes a first gate and a second gate. The common electrode layer is located on the first electrode layer. The common electrode layer has a first region, a second region, and a first necking region. The first necking region connects the first region and the second region. The first region and the first gate are correspondingly disposed, and the second region and the second gate are correspondingly disposed. The cathode layer is located on the common electrode layer. The spacer is located between the common electrode layer and the cathode layer. The spacer and the first necking region are correspondingly disposed.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: An anti-virus chip includes a first connection terminal, a second connection terminal, a detection unit and a processing unit. The first connection terminal and the second connection terminal are respectively coupled to a connection port and a system circuit of an electronic device. The detection unit detects whether the connection port is connected to an external device via the first connection terminal. When the detection unit detects that the connection port is connected to the external device, the processing unit performs a virus-scan program on the external device to determine whether a virus exists in the external device. When determining that a virus does not exist in the external device, the processing unit establishes a first transmission path between the first connection terminal and the second connection terminal. When determining that a virus exists in the external device, the processing unit does not establish the first transmission path.

Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A device includes a substrate, a first dielectric layer over the substrate, a first conductive feature in the first dielectric layer, and an etch stop layer over the first dielectric layer. The etch stop layer includes metal-doped aluminum nitride. The device further includes a second dielectric layer over the etch stop layer, and a second conductive feature in the second dielectric layer. The second conductive feature extends into the etch stop layer and contacts the first conductive feature.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, an encapsulant, a protection layer and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The encapsulant is disposed over the interposer and laterally encapsulating the at least one semiconductor die. The connectors are disposed on the second surface of the interposer and electrically connected with the at least one semiconductor die through the interposer. The protection layer is disposed on the second surface of the interposer and surrounding the connectors. The sidewalls of the interposer include slanted sidewalls connected to the second surface, and the protection layer is in contact with the slant sidewalls of the interposer.

Abstract: A method of reconstructing transcranial images using a dual-mode ultrasonic phased array includes steps of: controlling channels to emit energy toward an intracranial target point of a patient; respectively generating backscattered radiofrequency (RF) data by using the channels to receive backscattered energy reflected from the intracranial target; and reconstructing an acoustic distribution image based on those backscattered RF data in real-time. Compared with Pre-Treatment Ray Tracing Method, the present invention can display intracranial pressure distribution in real-time; compared with MR Thermometry, the present invention can be applied to low-energy applications without temperature change; and compared with Passive Cavitation Imaging, the present invention can stably present acoustic distribution images without relying on microbubbles.

Abstract: A thin film transistor includes an active layer and at least one gate stack. The active layer may be formed using multiple iterations of a unit layer stack deposition process, which includes an acceptor-type oxide deposition process and a post-transition metal oxide deposition process. A surface of each gate dielectric within the at least one gate stack contacts a surface of a respective layer of the oxide of the acceptor-type element so that leakage current of the active layer may be minimized. A source electrode and a drain electrode may contact an oxide layer providing lower contact resistance such as a layer of the post-transition metal oxide or a zinc oxide layer within the active layer.

Abstract: The present invention relates to a pogo pin cooling system and a pogo pin cooling method and an electronic device testing apparatus having the system. The system uses a cooling fluid supply module for the cooling of the pogo pin, and the cooling fluid may be either a coolant or a cooling gas. When an electronic device is accommodated in the chip socket, the cooling fluid supply module supplies a cooling fluid into the chip socket through the cooling fluid supply channel and the inlet, and the cooling fluid passes through the pogo pins and then flows into the cooling fluid discharge channel through the outlet. In the present invention, the cooling fluid is mainly used to cool not only the pogo pins in the chip socket but also the bottom surface of the electronic device and the solder ball contacts on the bottom surface.

Abstract: A method and a user equipment for reporting a remaining delay budget information are provided. The method includes: receiving a radio resource control configuration, wherein the radio resource control configuration indicates the user equipment to report the remaining delay budget information of a logical channel or a logical channel group through a status report message; determining whether a triggering condition is met, wherein the triggering condition is associated with a threshold of remaining delay budget; and in response to the triggering condition being met, transmitting the status report message including the remaining delay budget information, wherein the remaining delay budget information indicates at least one remaining delay budget and at least one associated buffer size.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: The present invention relates to a pogo pin cooling system and a pogo pin cooling method and an electronic device testing apparatus having the system. The system mainly comprises a coolant circulation module, which includes a coolant supply channel communicated with an inlet of a chip socket and a coolant recovery channel communicated with an outlet of the chip socket. When an electronic device is accommodated in the chip socket, the coolant circulation module supplies a coolant into the chip socket through the coolant supply channel and the inlet, and the coolant passes through the pogo pins and then flows into the coolant recovery channel through the outlet.

Abstract: The invention discloses a method to set up a cross-domain DDS-secure network and then use it to transmit various kinds of data. To set up the cross-domain DDS-secure network, we first register IoT and monitor devices on the administration website. Second, we group devices based on our needs and then ask the website to generate configurations and certificates for each device. Finally, we download those files and deploy them to each device. In an extremely case, we can accomplish all operations only through a mobile device. During the system operating, all devices establish the DDS-secure connections to each other, and data will transmit on the network securely.

Abstract: An electronic package is provided, in which a circuit structure is stacked on a carrier structure having a routing layer via support structures, where electronic elements are disposed on upper and lower sides of the circuit structure and the carrier structure, and the electronic elements and the support structures are encapsulated by a cladding layer, such that the electronic package can effectively increase the packaging density to meet the requirements of multi-functional end products.

Abstract: A chip structure is provided. The chip structure includes a substrate, a redistribution layer over the substrate, a bonding pad over the redistribution layer, a shielding pad over the redistribution layer and surrounding the bonding pad, an insulating layer over the redistribution layer and the shielding pad, and a bump over the bonding pad and the insulating layer. The insulating layer includes a first part and a second part surrounded by the first part, the first part has first thickness, the second part has a second thickness, and the first thickness and the second thickness are different.

Abstract: A disclosed transistor structure includes a gate electrode, an active layer, a source electrode, a drain electrode, an insulating layer separating the gate electrode from the active layer, and a carrier modification device that reduces short channel effects by reducing carrier concentration variations in the active layer. The carrier modification device may include a capping layer in contact with the active layer that acts to increase a carrier concentration in the active layer. Alternatively, the carrier modification device may include a first injection layer in contact with the source electrode and the active layer separating the source electrode from the active layer, and a second injection layer in contact with the drain electrode and the active layer separating the drain electrode from the active layer. The first and second injection layers may act to reduce a carrier concentration within the active layer near the source electrode and the drain electrode.

Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.

Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.