Patents by Inventor Ching-Wen Chiang

Ching-Wen Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160049359
    Abstract: An interposer is provided, including a substrate body, a plurality of conductive posts formed in the substrate body, and a plurality of conductive pads formed on the substrate body and electrically connected to the conductive posts. The conductive pads and the conductive posts are integrally formed. As such, no interface is formed between the conductive pads and the conductive posts, thereby preventing delamination or cracking from occurring between the conductive pads and the conductive posts.
    Type: Application
    Filed: June 19, 2015
    Publication date: February 18, 2016
    Inventors: Ching-Wen Chiang, Kuang-Hsin Chen, Hsien-Wen Chen
  • Patent number: 9196596
    Abstract: A method of manufacturing an interposer is provided, including forming a plurality of first openings on one surface side of a substrate, forming a first metal layer in the first openings, forming on the other surface side of the substrate a plurality of second openings that are in communication with the first openings, forming a second metal layer in the second openings, and electrically connecting the first metal layer to the second metal layer, so as to form conductive through holes. The conductive through holes are formed stage by stage, such that the fabrication time in forming the metal layers is reduced, and a metal material will not be accumulated too thick on a surface of the substrate. Therefore, the metal material has a smoother surface, and no overburden will be formed around end surfaces of the through holes. An interposer is also provided.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: November 24, 2015
    Assignee: Siliconware Precision Industries Co., Ltd.
    Inventors: Ching-Wen Chiang, Kuang-Hsin Chen, Wei-Jen Chang, Hsien-Wen Chen
  • Publication number: 20140367849
    Abstract: A method of manufacturing an interposer is provided, including forming a plurality of first openings on one surface side of a substrate, forming a first metal layer in the first openings, forming on the other surface side of the substrate a plurality of second openings that are in communication with the first openings, forming a second metal layer in the second openings, and electrically connecting the first metal layer to the second metal layer, so as to form conductive through holes. The conductive through holes are formed stage by stage, such that the fabrication time in forming the metal layers is reduced, and a metal material will not be accumulated too thick on a surface of the substrate. Therefore, the metal material has a smoother surface, and no overburden will be formed around end surfaces of the through holes. An interposer is also provided.
    Type: Application
    Filed: August 29, 2013
    Publication date: December 18, 2014
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Ching-Wen Chiang, Kuang-Hsin Chen, Wei-Jen Chang, Hsien-Wen Chen