Abstract: A light-emitting module is provided. The light-emitting module includes a substrate and n number of light-emitting elements disposed on the substrate. The n number of light-emitting elements have n?1 number of first intervals. The n?1 number of first intervals have a first standard deviation, wherein n is greater than or equal to 3. The light-emitting module further includes a light-shielding structure which is disposed on the n number of light-emitting elements and has n number of light-emitting holes. The n number of light-emitting holes correspond to the n number of light-emitting elements, respectively, and have n?1 number of second intervals. The n?1 number of second intervals have a second standard deviation, wherein the first standard deviation is greater than the second standard deviation.

Abstract: A bus configuration system includes a plurality of driver integrated circuits (ICs) coupled sequentially on a daisy chain, and a bus controller coupled to the plurality of driver ICs. Each driver IC includes a plurality of ports. The bus controller is used to generate a port definition code for configuring each port of the each driver IC. The bus controller includes a clock output port used to output a clock signal and a data output port used to output a data signal. When a port of the plurality of ports detects the clock signal, the port is configured as a clock input port.

Abstract: A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A quantum dot oil-based ink is provided. The quantum dot oil-based ink includes a quantum dot material, a dispersing solvent, a viscosity modifier, and a surface tension modifying solution. The dispersing solvent includes a linear alkane having 6 to 14 carbon atoms. The viscosity modifier includes an aromatic hydrocarbon having 10 to 18 carbon atoms or a linear olefin having 16 to 20 carbon atoms. The surface tension modifying solution includes a hydrophobic polymer material and a nonpolar solvent.

Abstract: A pixel unit includes a red LED chip, a green LED chip, and a blue LED chip. Each of these chips has an optical density concentration zone and a reference line passing through the geometric center of the top-view shape of the chip. The optical density concentration zone of each of these chips is deviated to one side of the respective reference line of the chip. The reference lines of the chips are parallel to each other. The optical density concentration zones of the chips are all deviated to the same side of the respective reference line.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: Provided is a conductive structure and a method for forming such a structure. The method includes forming a treatable layer by depositing a layer comprising a metal over a structure; performing a directional treatment process on a targeted portion of the treatable layer to convert the targeted portion to a material different from a non-targeted portion of the treatable layer, wherein the directional treatment process is selected from the group consisting of nitridation, oxidation, chlorination, carbonization; and selectively removing the non-targeted portion from the structure, wherein the targeted portion remains over the structure.

Abstract: A dimmer circuit includes a light emitting module, a first current source, a digital-to-analog converter, a switch, a second current source and a pulse width modulation generator. The light emitting module is for emitting light according to a driving current. The first current source includes a first terminal coupled to a second terminal of the light emitting module. The digital-to-analog converter is for generating a DC voltage according to a DC dimming code signal to control the first current source. The switch includes a first terminal coupled to a second terminal of the light emitting module. The second current source includes a first terminal coupled to a second terminal of the switch. The PWM generator is for generating a PWM voltage according to the PWM dimming code signal to control the second current source.

Abstract: A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.

Abstract: A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.

Abstract: A dimmer circuit includes a light emitting module, a first current source, a digital-to-analog converter, a switch, a second current source and a pulse width modulation generator. The light emitting module is for emitting light according to a driving current. The first current source includes a first terminal coupled to a second terminal of the light emitting module. The digital-to-analog converter is for generating a DC voltage according to a DC dimming code signal to control the first current source. The switch includes a first terminal coupled to a second terminal of the light emitting module. The second current source includes a first terminal coupled to a second terminal of the switch. The PWM generator is for generating a PWM voltage according to the PWM dimming code signal to control the second current source.

Abstract: A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A storage rack contains: a rectangular platform, two support feet, a rectangular plane, two long fringes, two short fringes, four circular orifices, four oval orifices, and two grips which. The two support feet are connected on the rectangular platform, and a respective support foot has a first inward bending portion and a second inward bending portion which are formed on two free ends of two tops of the respective support foot. Each of the first inward bending portion and the second inward bending portion has an arcuate face and an insertion, the arcuate face corresponds to a respective oval orifice of a respective long fringe of the rectangular platform, and the insertion corresponds to a respective circular orifice of the respective long fringe of the rectangular platform, such that the insertion is rotatably accommodated into the respective circular orifice to expand or retract the respective support foot freely.

Abstract: A storage rack contains: a rectangular platform, two support feet, a rectangular plane, two long fringes, two short fringes, four circular orifices, four oval orifices, and two grips which. The two support feet are connected on the rectangular platform, and a respective support foot has a first inward bending portion and a second inward bending portion which are formed on two free ends of two tops of the respective support foot. Each of the first inward bending portion and the second inward bending portion has an arcuate face and an insertion, the arcuate face corresponds to a respective oval orifice of a respective long fringe of the rectangular platform, and the insertion corresponds to a respective circular orifice of the respective long fringe of the rectangular platform, such that the insertion is rotatably accommodated into the respective circular orifice to expand or retract the respective support foot freely.

Abstract: An adhesive deliver apparatus includes: a holder; an adhesive tube, containing an adhesive fluid and positioned inside the holder, wherein the adhesive tube comprises a nozzle and a nozzle seal formed on the nozzle; a support tube comprising a proximal end and a distal end; a connector, arranged to operably connect with the proximal end of the support tube; and an inner tube, positioned within the support tube and comprising an inlet end connected with the connector and an outlet end approximating to the distal end of the support tube. When the connector is inserted into the holder, a portion of the connector would break through the nozzle seal. When the holder is pressed, the adhesive fluid will be squeezed out from the adhesive tube and transmitted through the inner tube from the inlet end to the outlet end.