Abstract: The present invention relates to compositions and methods for preventing or treating involuntary movements associated with dopaminergic dysfunction, including L-DOPA-induced dyskinesia. The composition comprises a potassium channel opener and a pharmaceutically acceptable carrier, wherein the carrier is a micelle. In certain embodiments, the potassium channel opener is an ATP-sensitive potassium (KATP) channel opener such as diazoxide, which may be embedded in or encapsulated by the micelle. The micelle may comprise a block copolymer and exhibit a particle size between 35 nm and 70 nm and/or a zeta potential between ?15 mV and ?2 mV The composition may be formulated for intranasal administration and provided as a liquid, dry powder, suspension, or combinations thereof. The invention further provides methods for treating involuntary movements by administering the micelle-based potassium channel opener composition to a subject in need, including human subjects, optionally at a dose ranging from 0.

Abstract: A high-efficiency product carbon footprint inventory system and a high-efficiency product carbon footprint inventory method are provided. The high-efficiency product carbon footprint inventory system includes a server system to perform calculation, storage, and data transmission in the high-efficiency product carbon footprint inventory system. The server system includes an operational boundary database and an energy resource setting module for receiving data provided by multiple data sources, including operational boundary organizational greenhouse gas inventory data, a production material list or a procurement material list, work order production information, data of operational boundary sales record, and supplier emission factor data of an operational boundary. The server system uses a computer system to implement the high-efficiency product carbon footprint inventory method, calculate an organization-wide product/service carbon footprint, and issue carbon-related management documents.

Abstract: Provided is a conductive structure and a method for forming such a structure. The method includes forming a treatable layer by depositing a layer comprising a metal over a structure; performing a directional treatment process on a targeted portion of the treatable layer to convert the targeted portion to a material different from a non-targeted portion of the treatable layer, wherein the directional treatment process is selected from the group consisting of nitridation, oxidation, chlorination, carbonization; and selectively removing the non-targeted portion from the structure, wherein the targeted portion remains over the structure.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A bus configuration system includes a plurality of driver integrated circuits (ICs) coupled sequentially on a daisy chain, and a bus controller coupled to the plurality of driver ICs. Each driver IC includes a plurality of ports. The bus controller is used to generate a port definition code for configuring each port of the each driver IC. The bus controller includes a clock output port used to output a clock signal and a data output port used to output a data signal. When a port of the plurality of ports detects the clock signal, the port is configured as a clock input port.

Abstract: Provided are structures and devices with conductive structures. A structure includes a cavity delineated by sidewalls of a dielectric material; a conductive structure bordering a bottom of the cavity; a layer or layers of material in the cavity and located directly on the conductive structure and directly on the sidewalls of the dielectric material, wherein the layer or layers of material comprise a barrier metal; and a conductive plug in the cavity and located directly on the layer or layers of material and directly on the sidewalls of the dielectric material.

Abstract: A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.

Abstract: A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.

Abstract: A quantum dot oil-based ink is provided. The quantum dot oil-based ink includes a quantum dot material, a dispersing solvent, a viscosity modifier, and a surface tension modifying solution. The dispersing solvent includes a linear alkane having 6 to 14 carbon atoms. The viscosity modifier includes an aromatic hydrocarbon having 10 to 18 carbon atoms or a linear olefin having 16 to 20 carbon atoms. The surface tension modifying solution includes a hydrophobic polymer material and a nonpolar solvent.

Abstract: A light-emitting module is provided. The light-emitting module includes a substrate and n number of light-emitting elements disposed on the substrate. The n number of light-emitting elements have n?1 number of first intervals. The n?1 number of first intervals have a first standard deviation, wherein n is greater than or equal to 3. The light-emitting module further includes a light-shielding structure which is disposed on the n number of light-emitting elements and has n number of light-emitting holes. The n number of light-emitting holes correspond to the n number of light-emitting elements, respectively, and have n?1 number of second intervals. The n?1 number of second intervals have a second standard deviation, wherein the first standard deviation is greater than the second standard deviation.

Abstract: A bus configuration system includes a plurality of driver integrated circuits (ICs) coupled sequentially on a daisy chain, and a bus controller coupled to the plurality of driver ICs. Each driver IC includes a plurality of ports. The bus controller is used to generate a port definition code for configuring each port of the each driver IC. The bus controller includes a clock output port used to output a clock signal and a data output port used to output a data signal. When a port of the plurality of ports detects the clock signal, the port is configured as a clock input port.

Abstract: A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A quantum dot oil-based ink is provided. The quantum dot oil-based ink includes a quantum dot material, a dispersing solvent, a viscosity modifier, and a surface tension modifying solution. The dispersing solvent includes a linear alkane having 6 to 14 carbon atoms. The viscosity modifier includes an aromatic hydrocarbon having 10 to 18 carbon atoms or a linear olefin having 16 to 20 carbon atoms. The surface tension modifying solution includes a hydrophobic polymer material and a nonpolar solvent.

Abstract: A pixel unit includes a red LED chip, a green LED chip, and a blue LED chip. Each of these chips has an optical density concentration zone and a reference line passing through the geometric center of the top-view shape of the chip. The optical density concentration zone of each of these chips is deviated to one side of the respective reference line of the chip. The reference lines of the chips are parallel to each other. The optical density concentration zones of the chips are all deviated to the same side of the respective reference line.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: Provided is a conductive structure and a method for forming such a structure. The method includes forming a treatable layer by depositing a layer comprising a metal over a structure; performing a directional treatment process on a targeted portion of the treatable layer to convert the targeted portion to a material different from a non-targeted portion of the treatable layer, wherein the directional treatment process is selected from the group consisting of nitridation, oxidation, chlorination, carbonization; and selectively removing the non-targeted portion from the structure, wherein the targeted portion remains over the structure.

Abstract: A dimmer circuit includes a light emitting module, a first current source, a digital-to-analog converter, a switch, a second current source and a pulse width modulation generator. The light emitting module is for emitting light according to a driving current. The first current source includes a first terminal coupled to a second terminal of the light emitting module. The digital-to-analog converter is for generating a DC voltage according to a DC dimming code signal to control the first current source. The switch includes a first terminal coupled to a second terminal of the light emitting module. The second current source includes a first terminal coupled to a second terminal of the switch. The PWM generator is for generating a PWM voltage according to the PWM dimming code signal to control the second current source.