Abstract: The present disclosure relates to a processing apparatus and a processing method, and the processing apparatus includes a chamber, a wafer carrier, at least one air inlet and at least one electrode, wherein the wafer carrier is extended into the chamber, the gas inlet is arranged around the chamber, and the electrode is disposed on the chamber.

Abstract: An integrated circuit design implementation system includes a synthesis tool configured to: receive a behavioral description of each of a plurality of first components; generate first netlists based on the behavioral descriptions of the first components; receive connection information of a plurality of second components, wherein the connection information comprises physical arrangement and connectivity among the first components and the second components; generate a plurality of third components, wherein each of the third components operatively corresponds to an interface between a pair of one of the first components and one of the second components; and transform the first netlists to a second netlist based on first vertices, second vertices, third vertices, and edges. The first vertices correspond to the first components, respectively, the second vertices correspond to the second components, respectively, and the third vertices correspond to the third components, respectively.

Abstract: A purification device for exercise environment is provided and includes a main body, a purification unit, a gas guider and a gas detection module. The purification unit, the gas guider and the gas detection module are disposed in the main body to guide the gas outside the main body through the purification unit for filtering and purifying the gas, and discharge a purified gas. The gas detection module detects particle concentration of suspended particles contained in the purified gas. The gas guider is controlled to operate and export the gas at an airflow rate within 3 minutes. The particle concentration of the suspended particles contained in the purified gas, which is filtered by the purification unit, is reduced to and less than 0.75 ?g/m3. Consequently, the purified gas is filtered, and an exerciser in an exercise environment can breathe with safety.

Abstract: A method includes: generating a designed mask overlay mark associated with an actual mask overlay mark to be formed in a mask; forming the actual mask overlay mark in the mask based on the designed mask overlay mark, the actual mask overlay mark including a plurality of overlay patterns; forming a device feature pattern adjacent to the actual mask overlay mark; forming an alignment of the mask by a mask metrology apparatus including a light source having a wavelength and a numerical aperture, wherein a pitch between adjacent two of the plurality of overlay patterns does not exceed the wavelength divided by twice the numerical aperture; and forming a pattern in a layer of a wafer by transferring the device feature pattern while the mask is under the alignment.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.

Abstract: A method includes forming a package, which includes forming a plurality of redistribution lines over a carrier, and forming a thermal dissipation block over the carrier. The plurality of redistribution lines and the thermal dissipation block are formed by common processes. The thermal dissipation block has a first metal density, and the plurality of redistribution lines have a second metal density smaller than the first metal density. The method further includes forming a metal post over the carrier, placing a device die directly over the thermal dissipation block, and encapsulating the device die and the metal post in an encapsulant. The package is then de-bonded from the carrier.

Abstract: A method for generating a tree diagram from a capitalization table of a company includes: generating a plurality of interactive icons that are associated with the company and partial owners of the company for the tree diagram, wherein the interactive icons include a root node icon that is associated with the company, and a plurality of stem node icons each associated with a respective one of partial owners; arranging the root node icon and the plurality of stem node icons in the tree diagram by determining an importance value determined for each of the stem node icons, and by arranging each of the stem node icons to have a distance from the root node icon that is inversely related to the importance value of the stem node icon; and plotting a plurality of investment routes, each connecting two of the interactive icons arranged in the tree diagram.

Abstract: A semiconductor apparatus and a method for collecting residues of curable material are provided. The semiconductor apparatus includes a chamber containing a wafer cassette, and a collecting module disposed in the chamber for collecting residues of curable material in the chamber. The collecting module includes a flow-directing structure disposed below a ceiling of the chamber, a baffle structure disposed below the flow-directing structure, and a tray disposed on the wafer cassette. The flow-directing structure includes a first hollow region, the baffle structure includes a second hollow region, and the tray is moved together with the wafer cassette to pass through the second hollow region of the baffle structure and is positioned to cover the first hollow region of the flow-directing structure.

Abstract: A defect inspection method, an inspection system, and a non-transitory computer-readable storage medium are provided. The defect inspection method includes providing a processed image and a reference image of a wafer, both the processed image and the reference image comprising a pattern of interest; determining the processed image as a qualified image in response to a matching ratio that reflects a percentage of correctly aligned features of the pattern of interest between the processed image and the reference image is above a first predetermined threshold; selecting a first feature of the qualified image; selecting a second feature of the reference image corresponding to the first feature of the processed image; comparing the qualified image with the reference image to determine a variation of the first feature with respect to the second feature; and detecting a defect of the wafer based on a comparison of the first and second features.

Abstract: A method includes forming a package, which includes forming a plurality of redistribution lines over a carrier, and forming a thermal dissipation block over the carrier. The plurality of redistribution lines and the thermal dissipation block are formed by common processes. The thermal dissipation block has a first metal density, and the plurality of redistribution lines have a second metal density smaller than the first metal density. The method further includes forming a metal post over the carrier, placing a device die directly over the thermal dissipation block, and encapsulating the device die and the metal post in an encapsulant. The package is then de-bonded from the carrier.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: Provided herein are compositions, systems, kits, and methods for treating nervous system injuries caused by trauma or neurodegeneration or aging in a subject by administering a CSPG or SOCS3 reduction peptide (CRP and SRP respectively), or a nucleic acid sequence encoding the CRP or SRP, wherein both the CRP and SRP comprise a cell membrane penetrating domain, and a lysosome targeting domain, and the CRP further comprises a chondroitin sulfate proteoglycan (CSPG) binding domain, and the SRP further comprises a suppressor of cytokine signaling-3 (SOCS3) binding domain.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: A method includes forming a package, which includes forming a plurality of redistribution lines over a carrier, and forming a thermal dissipation block over the carrier. The plurality of redistribution lines and the thermal dissipation block are formed by common processes. The thermal dissipation block has a first metal density, and the plurality of redistribution lines have a second metal density smaller than the first metal density. The method further includes forming a metal post over the carrier, placing a device die directly over the thermal dissipation block, and encapsulating the device die and the metal post in an encapsulant. The package is then de-bonded from the carrier.

Abstract: A semiconductor device includes an integrated passive device coupled to a redistribution structure by a plurality of first bumps, and having a plurality of second bumps disposed opposite the plurality of first bumps, wherein the plurality of first and second bumps are thermally and/or electrically connected, and thus enable further thermal and/or electrical connections within or comprising the semiconductor device.

Abstract: A system and method utilize capacitance sensor data to identify cell events with single-cell resolution. The method identifies patterns in the sensor data related to events such as mitosis, migration-in to the sensor field, and migration-out. The system may include a processor co-located with the sensor to perform the pattern recognition. Further, microfluidic channels can be provided to direct cells to the sensors.

Abstract: A method includes forming a package, which includes forming a plurality of redistribution lines over a carrier, and forming a thermal dissipation block over the carrier. The plurality of redistribution lines and the thermal dissipation block are formed by common processes. The thermal dissipation block has a first metal density, and the plurality of redistribution lines have a second metal density smaller than the first metal density. The method further includes forming a metal post over the carrier, placing a device die directly over the thermal dissipation block, and encapsulating the device die and the metal post in an encapsulant. The package is then de-bonded from the carrier.

Abstract: A thermal ground plane (TGP) is disclosed. A TGP may include a first planar substrate member comprising copper and a second planar substrate member comprising a metal, wherein the first planar substrate member and the second planar substrate member enclose a working fluid. The TGP may include a first plurality of pillars disposed on an interior surface of the first planar substrate and a mesh layer disposed on the top of the first plurality of pillars, wherein the mesh layer comprises at least one of copper, polymer encapsulated with copper, or stainless steel encapsulated with copper. The TGP may also include a second plurality of pillars disposed on an interior surface of the second planar substrate member within an area defined by the perimeter of the second planar substrate member and the second plurality of pillars extend from the second planar substrate member to the mesh layer.

Abstract: Provided herein are compositions, systems, kits, and methods for treating nervous system injuries caused by trauma or neurodegeneration or aging in a subject by administering a CSPG or SOCS3 reduction peptide (CRP and SRP respectively), or a nucleic acid sequence encoding the CRP or SRP, wherein both the CRP and SRP comprise a cell membrane penetrating domain, and a lysosome targeting domain, and the CRP further comprises a chondroitin sulfate proteoglycan (CSPG) binding domain, and the SRP further comprises a suppressor of cytokine signaling-3 (SOCS3) binding domain.

Abstract: A semiconductor device includes a first substrate. The semiconductor device includes a plurality of metallization layers formed over the first substrate. The semiconductor device includes a plurality of via structures formed over the plurality of metallization layers. The semiconductor device includes a second substrate attached to the first substrate through the plurality of via structures. The semiconductor device includes a first conductive line disposed in a first one of the plurality of metallization layers. The first conductive line, extending along a first lateral direction, is connected to at least a first one of the plurality of via structures that is in electrical contact with a first through via structure of the second substrate, and to at least a second one of the plurality of via structures that is laterally offset from the first through via structure.