Abstract: A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.

Abstract: A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.

Abstract: In an embodiment, a method includes: aligning a first package component with a second package component, the first package component having a first region and a second region, the first region including a first conductive connector, the second region including a second conductive connector; performing a first laser shot on a first portion of a top surface of the first package component, the first laser shot reflowing the first conductive connector of the first region, the first portion of the top surface of the first package component completely overlapping the first region; and after performing the first laser shot, performing a second laser shot on a second portion of the top surface of the first package component, the second laser shot reflowing the second conductive connector of the second region, the second portion of the top surface of the first package component completely overlapping the second region.

Abstract: A method for evaluating a risk of a subject getting a specific disease includes steps of: storing a reference database that contains original parameter sets; selecting target alleles from an SNP profile derived from genome sequencing data of a subject; selecting target parameter sets from among the original parameter sets; calculating, for each of the target parameter sets, a race factor based on a global risk allele frequency and a group-specific risk allele frequency included in the target parameter set; calculating a genetic factor based on statistics, global reference allele frequencies, the race factors for the target parameter sets, and numbers of chromosomes in homologous chromosome pairs included in the target parameter sets; calculating a citation factor based on numbers of citation times included in the target parameter sets; and calculating a risk score based on the genetic factor and the citation factor.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: A hydrophone may include a first piezoelectric cable including alternating sections of positive polarity and negative polarity, and a second piezoelectric cable including alternating sections of negative polarity and positive polarity. At least a portion of each section of positive polarity of the first piezoelectric cable may be bonded or adhered to at least a portion of a section of negative polarity of the second piezoelectric cable. A method of manufacturing a hydrophone may include winding or coiling a first piezoelectric cable and a second piezoelectric cable at the same time to create a series of wound sections including cables, the wound sections alternating with a series of not wound sections including the cables.

Abstract: The present invention relates to the treatment of bacterial infections and the reduction of inflammatory response using bacteriophage compositions. In an aspect, provided herein are methods of treating a bacterial infection characterized by inflammation in a subject, the method comprising administering to the subject a bacteriophage composition that is essentially free of impurities, wherein the composition reduces inflammation.

Abstract: The present invention relates to the treatment of bacterial infections and the reduction of inflammatory response using bacteriophage compositions.

Abstract: A heat dissipating system of robot is provided. The heat dissipating system includes a gas supply device and a robot. The gas supply device is configured to provide a high-pressure gas. The robot is in communication with the gas supply device and includes a housing, an inlet and at least one valve. The housing defines an inner space. The inlet is disposed on the housing and is in communication with the gas supply device and the inner space. The at least one valve is disposed on the housing and is in communication with the inner space. The high-pressure gas outputted by the gas supply device is guided into the inner space through the inlet, and the high-pressure gas accommodated in the inner space is released through the at least one valve when the at least one valve is open.

Abstract: A hydrophone may include a first piezoelectric cable including alternating sections of positive polarity and negative polarity, and a second piezoelectric cable including alternating sections of negative polarity and positive polarity. At least a portion of each section of positive polarity of the first piezoelectric cable may be bonded or adhered to at least a portion of a section of negative polarity of the second piezoelectric cable. A method of manufacturing a hydrophone may include winding or coiling a first piezoelectric cable and a second piezoelectric cable at the same time to create a series of wound sections including cables, the wound sections alternating with a series of not wound sections including the cables.

Abstract: A robotic system includes a base and at least one axis actuation module. The base includes an input power conversion device. A power input terminal of the input power conversion device receives an input voltage. The input voltage is converted into a first voltage by the input power conversion device. The first voltage is outputted from a power output terminal of the input power conversion device. The at least one axis actuation module is installed on the base. Each axis actuation module includes a motor, an axis power conversion device and a driving device. The first voltage is converted into a second voltage with a rated voltage value by the axis power conversion device. The second voltage is converted into a third voltage by the driving device. The third voltage is provided to the motor.

Abstract: A robotic system includes a base and at least one axis actuation module. The base includes an input power conversion device. A power input terminal of the input power conversion device receives an input voltage. The input voltage is converted into a first voltage by the input power conversion device. The first voltage is outputted from a power output terminal of the input power conversion device. The at least one axis actuation module is installed on the base. Each axis actuation module includes a motor, an axis power conversion device and a driving device. The first voltage is converted into a second voltage with a rated voltage value by the axis power conversion device. The second voltage is converted into a third voltage by the driving device. The third voltage is provided to the motor.

Abstract: A heat dissipating system of robot is provided. The heat dissipating system includes a gas supply device and a robot. The gas supply device is configured to provide a high-pressure gas. The robot is in communication with the gas supply device and includes a housing, an inlet and at least one valve. The housing defines an inner space. The inlet is disposed on the housing and is in communication with the gas supply device and the inner space. The at least one valve is disposed on the housing and is in communication with the inner space. The high-pressure gas outputted by the gas supply device is guided into the inner space through the inlet, and the high-pressure gas accommodated in the inner space is released through the at least one valve when the at least one valve is open.

Abstract: A bus bar for solar cell component is provided. The bus bar includes a first copper ribbon, a second copper ribbon, a third copper ribbon and a fourth copper ribbon connected end-to-end. A first diode electrically bridges the first and the second copper ribbon; a second diode electrically bridges the second and the third copper ribbon; and a third diode electrically bridges the third and the fourth copper ribbon. A first electrical energy output terminal is formed at an end of the first copper ribbon corresponding to the second copper ribbon, and a second electrical energy output terminal is formed at an end of the fourth copper ribbon corresponding to the third copper ribbon.

Abstract: A bus bar for solar cell component is provided. The bus bar includes a first copper ribbon, a second copper ribbon, a third copper ribbon and a fourth copper ribbon connected end-to-end. A first diode electrically bridges the first and the second copper ribbon; a second diode electrically bridges the second and the third copper ribbon; and a third diode electrically bridges the third and the fourth copper ribbon. A first electrical energy output terminal is formed at an end of the first copper ribbon corresponding to the second copper ribbon, and a second electrical energy output terminal is formed at an end of the fourth copper ribbon corresponding to the third copper ribbon.

Abstract: The invention relates to a magnetic connector, in particular to a structure for placing a magnet therein. In order to make the design on the size of the magnet free from the restraint on the standard of connection surfaces, a magnetic connector structure is provided. The magnetic connector structure is provided with a connection surface, conductive terminals (2), an inner cavity and a magnet (6), the connection surface comprising a terminal area and a magnetic area, wherein the magnet (6) is arranged in an inner cavity (10), and a magnetic conductive block is further provided for conducting the magnetic force of the magnet (6) to the magnetic area.