Abstract: A method for forming a semiconductor structure is provided. The method includes forming a patterned photoresist layer over a substrate and removing the patterned photoresist layer using a photoresist stripping composition that is free of dimethyl sulfoxide. The photoresist stripping composition includes an organic alkaline compound including at least one of a primary amine, secondary amine, a tertiary amine or a quaternary ammonium hydroxide or a salt thereof, an organic solvent selected from the group consisting of a glycol ether, a glycol acetate, a glycol, a pyrrolidone and mixtures thereof, and a polymer solubilizer.

Abstract: A method includes depositing a middle layer over a substrate. The middle layer includes sacrificial additives. A heating process is performed to cross-link the middle layer. The sacrificial additives are floated onto a top surface of the middle layer. The sacrificial additives are removed from the middle layer after the heating process is performed. A photoresist layer is deposited over the middle layer. The photoresist layer is exposed to a radiation beam. The photoresist layer is developed after the photoresist layer is exposed.

Abstract: A lithography developing composition includes an alkaline aqueous solution having a quaternary ammonium hydroxide with both a steric functional group and an electron withdrawing group on its side chains.

Abstract: A fan assembly including a base, a fan, a light-emitting unit, and a lighting effect component is provided. The fan is rotatably disposed above the base, and includes a central part and multiple blades extending outwards from the central part, and each of the blades has a top surface away from the base. The light-emitting unit is disposed on the base and located between the base and the central part of the fan. The lighting effect component is disposed on the base and surrounds the light-emitting unit. A projection of the lighting effect component projected onto the base is greater than a projection of the fan projected onto the base. A height of the lighting effect component protruding from the base is less than a distance between the top surface of one of the blades and the base. The lighting effect component includes an inclined inner surface.

Abstract: Various embodiments generally may relate to the field of wireless communications. For example, some embodiments may relate to enabling augmented computing as a service or network capability for sixth-generation (6G) networks. For example, some embodiments may be directed to the operation of a compute control client (Comp CC) at the UE side, and a compute control function (Comp CF) and compute service function (Comp SF) at the network side, which are referred to herein as “compute plane” functions to handle computing related control and user traffic.

Abstract: A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: The second ligands each have a following structure: represents the core group. L? represents a chemical that includes 0~2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1~6 carbon atoms saturated by H or F. L? represents a chemical that includes 1~6 carbon atoms saturated by H. L? represents a chemical that includes 1~6 carbon atoms saturated by H or F. Linker represents a chemical that links L? and L? together.

Abstract: A device includes a substrate; a first layer over the substrate, the first layer containing a plurality of fin features and a trench between two adjacent fin features. The device also includes a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

Abstract: A live media production function (LMPF) provisions a live media production service and live media service in a 5G system. The LMPF may be deployed as a virtual or physical network function in a 5G network or as an application function interfacing with the 5G network over a standardized interface.

Abstract: A method of forming a masking element is provided. The method includes forming a photoresist material having a polymer backbone over a substrate, where the polymer backbone includes a linking group that links a first polymer segment to a second polymer segment, each of the first and the second polymer segments having an ultraviolet (UV) curable group. The method includes exposing the photoresist material under a first UV radiation to break the link between the first polymer segment and the second polymer segment. The method includes exposing the photoresist material under a second UV radiation different from the first UV radiation to form a patterned resist layer. And the method includes developing the patterned resist layer to form a masking element.

Abstract: A method of manufacturing a semiconductor device includes forming a multilayer photoresist stack over a substrate, in which the multilayer photoresist stack has a first photoresist layer and a second photoresist layer over the first photoresist layer, and the second photoresist layer is less reactive to hydrogen than the first photoresist layer, exposing the multilayer photoresist stack to an EUV radiation, and developing the exposed multilayer photoresist stack.

Abstract: In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.

Abstract: A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?h<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<5, or a base having a pKa of 40>pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

Abstract: A method includes forming a tri-layer structure over a substrate, in which the tri-layer structure includes a bottom layer, a middle layer over the bottom layer and a photosensitive layer, patterning the photosensitive layer, performing a surface treatment on the patterned photosensitive layer to form a protection layer at least on a sidewall of the patterned photosensitive layer, patterning the middle layer after performing the surface treatment, patterning the bottom layer, and etching the substrate.

Abstract: Methods, systems, and storage media are described for providing fifth generation-local area network (5G LAN)-type services and 5G LAN communications over 5G Systems. Other embodiments may be described and/or claimed.

Abstract: A method includes forming a protective layer over a substrate edge and a photoresist over a substrate. Protective layer removed and photoresist exposed to radiation. Protective layer made of composition including acid generator and polymer having pendant acid-labile groups.

Abstract: A method for manufacturing semiconductor devices include steps of depositing a first photoresist over a first dielectric layer, first exposing the first photoresist to a first light-exposure using a first lithographic mask, and second exposing the first photoresist to a second light-exposure using a second lithographic mask. An overlap region of the first photoresist is exposed to both the first light-exposure and the second light-exposure. The first dielectric layer is thereafter patterned to form a mask overlay alignment mark in the overlap region. The patterning includes etching the first dielectric layer form a trench, and filling the trench with a conductive material to produce the alignment mark. A second dielectric layer is deposited over the alignment mark, and a second photoresist is deposited over the second dielectric layer. A third lithographic mask is aligned to the second photoresist using the underlying mask overlay alignment mark for registration.

Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.

Abstract: Control device for a power over Ethernet system having multiple power source devices comprises plural control circuits and a signal bus connecting them. Each control device connects plural power source devices and plural port switches, which controls power supply to a port to be connected by a power consuming device. Detection circuit detects at least one power supply state combination. Control signal generator picks up a power control combination signal corresponding to a detected power supply state combination from a power supply to power control look-up-table, upon change in the power supply state and provides the power control signals to corresponding port switches.

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.

Abstract: A spin on carbon composition, comprises: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker reacts with the carbon backbone polymer to partially crosslink the carbon backbone polymer at a first temperature, and the second crosslinker reacts with the carbon backbone polymer to further crosslink the carbon backbone polymer at a second temperature higher than the first temperature. The first crosslinker is a monomer, oligomer, or polymer. The second crosslinker is a monomer, oligomer, or polymer. The first and second crosslinkers are different from each other. When either of the first crosslinker or the second crosslinker is a polymer, the polymer is a different polymer than the carbon backbone polymer.