Abstract: Disclosed herein are electronic devices that include arrays of dual function light transmit and receive pixels. The pixels of such arrays include a photodetector (PD) structure and a vertical-cavity, surface-emitting laser (VCSEL) diode, both formed in a common stack of epitaxial semiconductor layers. The pixels of the array may be configured by a controller or processor to function either as a light emitter by biasing the VCSEL diode, or as a light detector or receiver by a different bias applied to the PD structure, and this functionality may be altered in time. The array of dual function pixels may be positioned interior to an optical display of an electronic device, in some cases to provide depth sensing or autofocus. The array of pixels may be registered with a camera of an electronic device, such as to provide depth sensing or autofocus.

Abstract: Embodiments of the disclosure relate to an optoelectronic device having an epitaxial stack, an array of laser emitters, and a thermal sensor. The epitaxial stack includes a set of epitaxial layers. The array of laser emitters is formed in the set of epitaxial layers. The thermal sensor is coupled to the epitaxial stack at a location adjacent to a laser emitter of the array of laser emitters. The optoelectronic device further includes a controller configured to receive an output of the thermal sensor and determine a temperature at a junction between an active region and an inactive region in the laser emitter by in-situ measurements.

Abstract: An HOD device, comprising: a framework; covering material, covering the frame work; at least one conductive region, provided on or in the covering material; wherein the conductive region is coupled to a capacitance detection circuit or a predetermined voltage level. The HOD device can be a vehicle control device such as a steering wheel. The conductive region comprises conductive wires which can be threads of the covering material. By this way, the arrangements of the conductive wires can be changed corresponding to the size or the shape of the frame work or any other requirements. Also, the interference caused by unstable factors can be improved since the conductive wires can be coupled to a ground source of the vehicle to provide a short capacitance sensing path.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: Optical apparatus includes a primary radiation source, which emits first optical radiation along a first optical axis. A DOE includes at least an entrance surface, upon which the first optical radiation from the primary radiation source is incident, and an exit surface, through which one or more primary diffraction orders of the first optical radiation are emitted from the DOE. At least one secondary radiation source is configured to direct second optical radiation to impinge on the DOE along a second optical axis, which is non-parallel to the first optical axis, causing at least a part of the second optical radiation to be diffracted by the DOE such that one or more secondary diffraction orders of the second optical radiation are emitted through the entrance face of the DOE. At least one detector is configured to sense at least one of the secondary diffraction orders of the second optical radiation.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: An electronic device includes an input device having a moveable shaft, a reflective surface, an optical energy transmitter, and optical energy receivers that receive optical energy transmitted by the optical energy transmitter and reflected by the reflective surface. Movement of the moveable shaft changes the optical energy received by the optical energy receivers. The movement or position of the shaft may be determined by analyzing the optical energy received. Detectable movement may include rotation, rotation speed, rotation direction, translation, tilt, displacement, and so on. The optical energy receivers may be configured in concentric rings.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: Optical apparatus includes a primary radiation source, which emits first optical radiation along a first optical axis. A DOE includes at least an entrance surface, upon which the first optical radiation from the primary radiation source is incident, and an exit surface, through which one or more primary diffraction orders of the first optical radiation are emitted from the DOE. At least one secondary radiation source is configured to direct second optical radiation to impinge on the DOE along a second optical axis, which is non-parallel to the first optical axis, causing at least a part of the second optical radiation to be diffracted by the DOE such that one or more secondary diffraction orders of the second optical radiation are emitted through the entrance face of the DOE. At least one detector is configured to sense at least one of the secondary diffraction orders of the second optical radiation.

Abstract: Optical apparatus includes a primary radiation source, which emits first optical radiation along a first optical axis. A DOE includes at least an entrance surface, upon which the first optical radiation from the primary radiation source is incident, and an exit surface, through which one or more primary diffraction orders of the first optical radiation are emitted from the DOE. At least one secondary radiation source is configured to direct second optical radiation to impinge on the DOE along a second optical axis, which is non-parallel to the first optical axis, causing at least a part of the second optical radiation to be diffracted by the DOE such that one or more secondary diffraction orders of the second optical radiation are emitted through the entrance face of the DOE. At least one detector is configured to sense at least one of the secondary diffraction orders of the second optical radiation.

Abstract: Systems, methods, and computer readable media to resolve three dimensional spatial information of cameras used to construct 3D images. Various embodiments perform communication synchronization between a first image capture system and one or more other image capture systems and generate a first flash pulse that projects a light pattern into an environment. An image is captured that includes the light pattern and a modulated optical signal encoded with an identifier of one of the first image capture system and related-camera information. A second flash from another image capture systems may flash at a second time based on the communication synchronization. During the second flash, the first image capture system captures a second image of the environment. Based on the first and second images, the first image capture system determines the orientation of the second image capture system relative to the first image capture system.